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http://dx.doi.org/10.6113/JPE.2016.16.5.1843

Numerical Prediction of Solder Fatigue Life in a High Power IGBT Module Using Ribbon Bonding  

Suh, Il-Woong (Graduate School of NID Fusion Technology, Seoul National University of Science and Technology)
Jung, Hoon-Sun (Graduate School of NID Fusion Technology, Seoul National University of Science and Technology)
Lee, Young-Ho (Woojin Industrial System Co., Ltd.)
Choa, Sung-Hoon (Graduate School of NID Fusion Technology, Seoul National University of Science and Technology)
Publication Information
Journal of Power Electronics / v.16, no.5, 2016 , pp. 1843-1850 More about this Journal
Abstract
This study focused on predicting the fatigue life of an insulated gate bipolar transistor (IGBT) power module for electric locomotives. The effects of different wiring technologies, including aluminum wires, copper wires, aluminum ribbons, and copper ribbons, on solder fatigue life were investigated to meet the high power requirement of the IGBT module. The module's temperature distribution and solder fatigue behavior were investigated through coupled electro-thermo-mechanical analysis based on the finite element method. The ribbons attained a chip junction temperature that was 30℃ lower than that attained with conventional round wires. The ribbons also exhibited a lower plastic strain in comparison with the wires. However, the difference in plastic strain and junction temperature among the different ribbon materials was relatively small. The ribbons also exhibited different crack propagation behaviors relative to the wires. For the wires, the cracks initiated at the outmost edge of the solder, whereas for the ribbons, the cracks grew in the solder layer beneath the ribbons. Comparison of fatigue failure areas indicated that ribbon bonding technology could substantially enhance the fatigue life of IGBT modules and be a potential candidate for high power modules.
Keywords
Fatigue lifetime; Insulated gate bipolar transistor (IGBT); Numerical analysis; Ribbon; Solder fatigue;
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Times Cited By KSCI : 3  (Citation Analysis)
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