The Journal of Korean Institute of Electromagnetic Engineering and Science (한국전자파학회논문지)

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
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S-Band Internally-Matched High Efficiency and High Power Amplifier Using GaN HEMT Die

GaN HEMT Die를 이용한 S-대역 내부 정합형 고효율 고출력 증폭기

  • Received : 2015.04.09
  • Accepted : 2015.06.09
  • Published : 2015.06.30
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Abstract

This paper presents the design, fabrication and measurement results of a S-band internally-matched power amplifier using Gallium Nitride High Electron Mobility Transistor(GaN HEMT) die. In order to fabricate the S-band internally-matched power amplifier, a high dielectric substrate and alumina were used for input/output matching circuits. The measured output power is 55.4 dBm, the drain efficiency is 78 % and the power gain is 11 dB under pulse operation at the frequency of 3 GHz.

본 논문은 GaN(Gallium Nitride) HEMT(High Electron Mobility Transistor) die를 이용하여 S-대역 내부 정합형 전력 증폭기 설계, 제작 그리고 실험 결과에 대해 기술하였다. S-대역 내부 정합형 전력 증폭기를 설계하기 위하여 고유전율을 가지는 기판과 알루미나 기판을 이용하여 입/출력단 정합 회로를 설계 및 제작하였다. 측정 결과로는 펄스 모드로 동작시켰을 때 3 GHz에서 55.4 dBm의 출력 전력, 78 % 드레인 효율 그리고 11 dB의 전력 이득을 얻었다.

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References

  1. Aethercomm, "Gallium Nitride(GaN) microwave transistor technology for radar applications", Microwave Journal, vol. 51, no. 1, p. 106, Jan. 2008.
  2. Isao Takenka, Kazunori Asano, Shinnosuke Takahashi, Yasuhiro Murase, Yuji Ando, Hidemasa Takahashi, and Chiaki Sasaoka, "High-efficiency and high power microwave amplifier using GaN-on-Si FET with improves high temperature operation characteristics", IEEE Trans. Microw. Theory Tech., vol. 62, no. 3, pp. 502-512, Mar. 2014. https://doi.org/10.1109/TMTT.2014.2298381
  3. K. Krishnamurthy, M. J. Poulton, J. Martin, R. Vetury, J. D. Brown, and J. B. Shealy, "A 250 W S-band GaNHEMT amplifier", Compound Semiconductor Integrated Circuit Symposium, pp. 1-4, Oct. 2007.
  4. Simon M. Wood, Ulf Andre, Bradley J. Millon, and Jim Milligan, "Hybrid and monolithic GaN power transistors for high power S-band radar applications", Microwave Integrated Circuits Conference(EuMIC), pp. 421-424, Oct. 2012.
  5. K. Krishnamurthy, J. Martin, B. Landberg, R. Vetury, and M. J. Poulton, "Wideband 400 W pulsed power amplifiers", Microwave Symposium Digest, 2008 IEEE MTTS International, pp. 303-306, Jun. 2008.
  6. CGH31240F, "240 W, 2,700-3,100 MHz, 50-ohm input/output matched, GaN HEMT for S-band radar systems", Cree, Available http://cree.com
  7. CGH35240F, "240 W, 3,100-3,500 MHz, 50-ohm input/output matched, GaN HEMT for S-band radar systems", Cree, Available http://cree.com
  8. Y.-F. Wu, S. M. Wood, R. P. Smith, S. Sheppard, S. T. Allen, P. Parikh, and J. Milligan, "An interanlly-matched GaN HEMT amplifier with 550-watt peak power at 3.5 GHz", Electron Devices Meeting, 2006. IEDM, pp. 1-3, Dec. 2006.