• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 ITC-CSCC -2
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• pp.1058-1061
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• 2002

This paper presents the method of low power optimization considering the glitch reduction in CMOS circuits. Our algorithm utilizes the information of MOS size, the load capacitance of fan-out, and input slew to calculate the output waveform by using the linear signal model. Therefore, the accurate waveform of glitch can be obtained for estimation of power dissipation caused by glitches. Our algorithm is applied to ISCAS’85 benchmark circuits and experimental results show 23% glitch reduction and 11% total power reduction.

• Journal of information and communication convergence engineering
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• 제13권3호
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• pp.180-188
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• 2015

As a potential alternative to the complementary metal-oxide semiconductor (CMOS) technology, many researchers are focusing on carbon-nanotube field-effect transistors (CNFETs) for future electronics. However, existing studies report the advantages of CNFETs over CMOS at the device level by using small-scale circuits, or over outdated CMOS technology. In this paper, we propose a methodology of analyzing CNFET-based circuits and study its impact at the full-chip scale. First, we design CNFET standard cells and use them to construct large-scale designs. Second, we perform parasitic extraction of CNFET devices and characterize their timing and power behaviors. Then, we perform a full-chip analysis and show the benefits of CNFET over CMOS in 45-nm and 20-nm designs. Our full-chip study shows that in the 45-nm design, CNFET circuits achieve a 5.91×/3.87× (delay/power) benefit over CMOS circuits at a density of 200 CNTs/µm. In the 20-nm design, CNFET achieves a 6.44×/3.01× (delay/power) benefit over CMOS at a density of 200 CNTs/µm.

• Journal of Power Electronics
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• 제18권2호
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• pp.640-650
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• 2018

A TRIAC dimmable LED driver with a wide tuning range and a two-stage uniform dimming scheme is proposed in this paper. To solve the restricted dimming range problem caused by the limited conduction ratio of TRIAC dimmers, a conduction ratio compensation technique is introduced, which can increase the output current up to the rated output current when the TRIAC dimmer turns to the maximum conduction ratio. For further optimization, a two-stage uniform dimming diagram with a rapid dimming curve and a slow dimming curve is designed to make the LED driver regulated visually uniform in the whole adjustable range of the TRIAC dimmer. The proposed control chip is fabricated in a TSMC $0.35{\mu}m$ 5V/650V CMOS/LDMOS process, and verified on a 21V/500mA circuit prototype. The test results show that, in the 90V/60Hz~132V/60Hz ac input range, the voltage linear regulation is 2.6%, the power factor is 99.5% and the efficiency is 83%. Moreover, in the dimming mode, the dimming rate is less than 1% when the maximum dimming current is 516mA and the minimum dimming current is only about 5mA.

• 전자공학회논문지D
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• 제34D권10호
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• pp.24-31
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• 1997

A new design method of stable RF power amplifier using 3dB coupled line is proposed in this thiesis. The proposed method of broadband matching consist of resistive matching circuits at low frequency and lossless matching circuits at microwave band. This design method increase the stability of an amplifier and is suitable for interstage matching. When high power amplifier is designed using this method for PCS base transceiver station, the measured resutls show thst the gain of 18.5dB, and 9W (39.5dBm) output power. We use motorola's MRF6401 for medium power and MRF 6402 for large power and cascaded them.

• Journal of Power Electronics
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• 제16권6호
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• pp.2212-2220
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• 2016

Based on the conventional PID algorithm and the adaptive PID (AD-PID) algorithm, a separate sampling adaptive PID (SSA-PID) algorithm is proposed to improve the transient response of digitally controlled DC-DC converters. The SSA-PID algorithm, which can be divided into an oversampled adaptive P (AD-P) control and an adaptive ID (AD-ID) control, adopts a higher sampling frequency for AD-P control and a conventional sampling frequency for AD-ID control. In addition, it can also adaptively adjust the PID parameters (i.e. $K_p$, $K_i$ and $K_d$) based on the system state. Simulation results show that the proposed algorithm has better line transient and load transient responses than the conventional PID and AD-PID algorithms. Compared with the conventional PID and AD-PID algorithms, the experimental results based on a FPGA indicate that the recovery time of the SSA-PID algorithm is reduced by 80% and 67% separately, and that overshoot is decreased by 33% and 12% for a 700mA load step. Moreover, the SSA-PID algorithm can achieve zero overshoot during startup.

• Journal of Power Electronics
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• 제16권3호
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• pp.840-848
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• 2016

A primary-side regulation AC-DC converter operating in the PFM (Pulse Frequency Modulation) mode with a high precision output current is designed, which applies a novel inductance compensation technique to improve the precision of the output current, which reduces the bad impact of the large tolerance of the transformer primary side inductance in the same batch. In this paper, the output current is regulated by the OSC charging current, which is controlled by a CC (constant current) controller. Meanwhile, for different primary inductors, the inductance compensation module adjusts the OSC charging current finely to improve the accuracy of the output current. The operation principle and design of the CC controller and the inductance compensation module are analyzed and illustrated herein. The control chip is implemented based on a TSMC 0.35μm 5V/40V BCD process, and a 12V/1.1A prototype has been built to verify the proposed control method. The deviation of the output current is within ±3% and the variation of the output current is less than 1% when the inductances of the primary windings vary by 10%.

• ETRI Journal
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• 제37권1호
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• pp.97-106
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• 2015

In this paper, MOS-triggered silicon-controlled rectifier (SCR)-based electrostatic discharge (ESD) protection circuits for mobile application in 3.3 V I/O and SCR-based ESD protection circuits with floating N+/P+ diffusion regions for inverter and light-emitting diode driver applications in 20 V power clamps were designed. The breakdown voltage is induced by a grounded-gate NMOS (ggNMOS) in the MOS-triggered SCR-based ESD protection circuit for 3.3 V I/O. This lowers the breakdown voltage of the SCR by providing a trigger current to the P-well of the SCR. However, the operation resistance is increased compared to SCR, because additional diffusion regions increase the overall resistance of the protection circuit. To overcome this problem, the number of ggNMOS fingers was increased. The ESD protection circuit for the power clamp application at 20 V had a breakdown voltage of 23 V; the product of a high holding voltage by the N+/P+ floating diffusion region. The trigger voltage was improved by the partial insertion of a P-body to narrow the gap between the trigger and holding voltages. The ESD protection circuits for low- and high-voltage applications were designed using $0.18{\mu}m$ Bipolar-CMOS-DMOS technology, with $100{\mu}m$ width. Electrical characteristics and robustness are analyzed by a transmission line pulse measurement and an ESD pulse generator (ESS-6008).

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권4호
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• pp.493-500
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• 2015

A flyback converter operates with either pulse width modulation (PWM) or pulse frequency modulation (PFM) control scheme depending on the load current. At light load condition, PFM control is employed to reduce the switching frequency and thereby minimize the switching power loss. For heavier load, PWM control is used to regulate the output voltage of the flyback converter. The flyback controller has been implemented in a $0.35{\mu}m$ BCDMOS process and applied to a 40-W flyback converter. The light-load power efficiency of the flyback converter is improved up to 5.7-% comparing with the one operating with a fixed switching frequency.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권5호
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• pp.650-656
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• 2016

Voltage controlled oscillator (VCO) is widely used circuit component in high-performance microprocessors and modern communication systems as a frequency source. In present work, VCO designs using the different combination of NAND gates with three transistors and CMOS inverter are reported. Three, five and seven stages ring VCO circuits are designed. Coarse and fine tuning have been done using two different supply sources. The frequency with coarse tuning varies from 3.31 GHz to 5.60 GHz in three stages, 1.77 GHz to 3.26 GHz in five stages and 1.27 GHz to 2.32 GHz in seven stages VCO respectively. Moreover, for fine tuning frequency varies from 3.70 GHz to 3.94 GHz in three stages, 2.04 GHz to 2.18 GHz in five stages and 1.43 GHz to 1.58 GHz in seven stages VCO respectively. Results of power consumption and phase noise for the VCO circuits are also been reported. Results of proposed VCO circuits have been compared with previously reported circuits and present circuit approach show significant improvement.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 ITC-CSCC -2
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• pp.1119-1122
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• 2000

This paper describes on RF circuit simulation technique, especially on a RF modeling and a model extraction of a LDMOS(Lateral Diffused MOS) that has gate-width (Wg) dependence. Small-signal model parameters of the LDMOSs with various gate-widths extracted from S-parameter data are applied to make the relation between the RF performances and gate-width. It is proved that a source inductance (Ls) was not applicable to scaling rules. These extracted small-signal model parameters are also utilized to remove extrinsic elements in an extraction of a large-signal model (using HP Root MOSFET Model). Therefore, we can omit an additional measurement to extract extrinsic elements. When the large-signal model with Ls having the above gate-width dependence is applied to a high-power LDMOS module, the simulated performances (Output power, etc.) are in a good agreement with experimental results. It is proved that our extracted model and RF circuit simulation have a good accuracy.