• Title/Summary/Keyword: Power Amplifiers

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Development of Dry-type Surface Myoelectric Sensor for the Shape of the Reference Electrode and the Inter-Electrode Distance (기준전극의 형상과 입력전극사이의 간격을 고려한 건식형 표면 근전위 센서 개발)

  • Choi, Gi-Won;Choe, Gyu-Ha
    • The Transactions of the Korean Institute of Electrical Engineers D
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    • v.55 no.12
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    • pp.550-557
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    • 2006
  • This paper proposes a dry-type surface myoelectric sensor for the myoelectric hand prosthesis. The designed surface myoelectric sensor is composed of skin interface and processing circuits. The skin interface has one reference and two input electrodes, and the reference electrode is located in the center of two input electrodes. In this paper is proposed two types of sensors with the circle- and bar-shaped reference electrode, but all input electrodes are the bar-shaped. The metal material of the electrodes is the stainless steel (SUS440) that endures sweat and wet conditions. Considering the conduction velocity and the median frequency of the myoelectric signal, the inter-electrode distance (IED) between two input electrodes as 18mm, 20mm, and 22mm is selected. The signal processing circuit consists of a differential amplifier with a band pass filter, a band rejection filter for rejecting 60Hz power-line noise, amplifiers, and a mean absolute value(MAV) circuit. Using SUS440, six prototype skin interface with different reference electrode shape and IED is fabricated, and their output characteristics are evaluated by output signal obtained from the forearm of a healthy subject. The experimental results show that the skin interface with parallel bar shape and the 18mm IED has a good output characteristics. The fabricated dry-type surface myoelectric sensor is evaluated for the upper-limb amputee.

Characterization of amplified spontaneous emission light source from an $Er^{3+}$/$Tm^{3+}$co-doped silica fiber ($Er^{3+}$$Tm^{3+}$이 복합 첨가된 실리카 광섬유의 ASE 광원에 대한 특성 평가)

  • Jeong, Hoon;Oh, K.
    • Proceedings of the Optical Society of Korea Conference
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    • 2000.02a
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    • pp.96-97
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    • 2000
  • Incoherent broadband optical sources have been applied in various areas such as a light source for optical device characterization, fiber-optic gyroscopes$^{(1)}$ , and spectrum sliced light source in wavelength division multiplexing (WDM) system$^{(2)}$ . To utilize the inherent low loss in silica optical fibers, various types of incoherent light sources are being developed. Among the light sources, the amplified spontaneous emission (ASE) from a rare earth doped fiber has benefits in temperature stability, high output power, low polarization dependence over semiconductor diodes$^{(3)}$ . Recently erbium doped fibers (EDF) have been intensively researched for ASE sources as well as optical amplifiers$^{(4)}$ . The spectrum of ASE from an EDF, however, is limited in the 1520~1560 nm range in conventional configurations. In this letter we described a new broadband ASE source which included both the conventional ASE band of Er$^{3+}$ ion, 1520nm~1560nm and ASE band from Tm$^{3+}$ ions that extends the bandwidth further. For the first time, to the best knowledge of authors, a fiber ASE source based on the energy transfer between Er$^{3+}$ and Tm$^{3+}$ ions in the range of 1460~1550 nm, has been demonstrated using a single 980nm pump laser diode. (omitted)omitted)

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Characteistics of a CMOS Differential Input-Stage Using a Source-Coupled Backgate Pair (Source-Coupled Backgate쌍을 이용한 CMOS 차동입력단의 특성)

  • Kang, Wook;Lee, Won-Hyeong;Han, Woo-Jong;Kim, Soo-Won
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.28A no.1
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    • pp.40-45
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    • 1991
  • It is well known that the conventional differential source-coupled pair uses gates as its input terminals. This input pair provids a high open-loop gain, a large CMRR, and a good PSRR. For these reasons, the input pair has been used widely as an input stages of the differential amplifiers, but a narrow linear input range of this structurelimits its application in the area of some analog circuit design. A novel CMOS source-coupled backgate pair is proposed in this paper. The bulk of MOSFET is exploited and input devices are biased to operate in ohmic region. With this topology, the backgate pair of the wide linear input range and variable transconductance can be obtained. This backgate input differential stage is realized with the size of W/L=50/25 MOSFETs. The results show the nonlinear error is less than $\gamma$1% over 10V full-scale range for the bias current of 200$\mu$A with 10V single power-supply.

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A 1.2 V 7-bit 1 GS/s CMOS Flash ADC with Cascaded Voting and Offset Calibration

  • Jang, Young-Chan;Bae, Jun-Hyun;Lee, Ho-Young;You, Yong-Sang;Kim, Jae-Whui;Sim, Jae-Yoon;Park, Hong-June
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.4
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    • pp.318-325
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    • 2008
  • A 1.2 V 7-bit 1 GS/s CMOS flash ADC with an interpolation factor of 4 is implemented by using a $0.13\;{\mu}m$ CMOS process. A digital calibration of DC reference voltage is proposed for the $1^{st}$ preamp array to compensate for the input offset voltage of differrential amplifiers without disturbing the high-speed signal path. A 3-stage cascaded voting process is used in the digital encoder block to eliminate the conescutive bubbles up to seven completely, if the $2^{nd}$ preamp output is assumed to have a single bubble at most. ENOB and the power consumption were measured to be 5.88 bits and 212 mW with a 195 MHz $400\;mV_{p-p}$ sine wave input.

Design of the Clock Recovery Circuit for a 40 Gb/s Optical Receiver (40 Gb/s 광통신 수신기용 클락 복원 회로 설계)

  • Park, Chan-Ho;Woo, Dong-Sik;Kim, Kang-Wook
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2003.11a
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    • pp.136-139
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    • 2003
  • A clock recovery circuit for a 40 Gb/s optical receiver has been designed and implemented. The clock recovery circuit consists of signal amplifiers, a nonlinear circuit with diodes, and a bandpass filter Before implementing the 40 Gb/s clock recovery circuit, a 10 Gb/s clock recovery circuit has been successfully implemented and tested. With the 40 Gb/s clock recovery circuit, when a 40 Gb/s NRZ signal of -10 dBm was applied to the input of the circuit, the 40 GHz clock was recovered with the -20 dBm output power after passing through the nonlinear circuit. The output signal from the nonlinear circuit passes through a narrow-band filter, and then amplified. The implemented clock recovery circuit is planned to be used for the input of a phase locked loop to further stabilize the recovered clock signal and to reduce the clock jitter.

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Design of V-Band Differential Low Noise Amplifier Using 65-nm CMOS (65-nm CMOS 공정을 이용한 V-Band 차동 저잡음 증폭기 설계)

  • Kim, Dong-Wook;Seo, Hyun-Woo;Kim, Jun-Seong;Kim, Byung-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.28 no.10
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    • pp.832-835
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    • 2017
  • In this paper, V-band differential low noise amplifier(LNA) using 65-nm CMOS process for high speed wireless data communication is presented. The LNA is composed of 3-stage common-source differential amplifiers with neutralization of feedback capacitances using MOS capacitors and impedance matching utilizing transformers. The fabricated LNA has a peak gain of 23 dB at 63 GHz and 3 dB bandwidth of 6 GHz. The chip area of LNA is $0.3mm^2$ and the LNA consumes 32 mW DC power from 1.2 V supply voltage.

Experimental Study on an Electrical Circuit Model for neuron synapse based Memristor (뉴런 시냅스를 위한 멤리스터의 전기회로 모델의 실험적 연구)

  • Mo, Young-Sea;Song, Han-Jung
    • Journal of the Korean Institute of Intelligent Systems
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    • v.26 no.5
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    • pp.368-374
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    • 2016
  • This paper presents an experimental study on an electrical circuit model of the TiO2-based nano-wired memristor device for neuromophic applications. The electrical circuit equivalent model of the proposed memristor device consists of several electronics components and some passive devices including operational amplifiers, multipliers, resistors and capacitors. In order to verify the proposed design, both of simulation (using PSPICE) as well as hardware implementation were performed for the analysis of the memristor circuit with time waveforms, frequency spectra, I-V curves and power curves. The gained results from the measured data showed a good agreement with the simulation result that confirm the proposed idea.

Digital North Finding Method based on Fiber Optic Gyroscope (FOG를 이용한 디지털 진북추종 방식)

  • Kim Sung-jin
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.9 no.6
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    • pp.1356-1363
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    • 2005
  • In the gyrocompass system, the use of the fiber optic gyroscope(FOG) makes this traditional system considerably attractive because it has strong points in terms of weight, power, warming-up time, and cost. In this paper, a novel digital north-finding method based upon an FOG, which can be applied to the gyrocompass system, is proposed. The analytical model for the earth signal of the FOG is described, and the earth signals passed through lock-in amplifiers are modeled. Additionally, a north-finding algorithm using two lock-in amplifier outputs is developed, and the proposed method is organized by the developed algorithm. Simulation results are included to verify the performance of the proposed method.

Development of an Inductive Proximity Sensor in Active Magnetic Bearing System for Magnetically Suspended Centrifugal Blood Pumps (능동 자기 베어링 방식의 자기 부상 원심성 혈액 펌프를 위한 유도성 근접 센서 개발)

  • Kim, H.I.;Kim, H.C.
    • Proceedings of the KOSOMBE Conference
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    • v.1998 no.11
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    • pp.245-246
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    • 1998
  • AMB(Active Magnetic Bearing) systems are popularly used in various areas. In biomedical engineering applications it is a key part of magnetically suspended rotary blood pumps. The special advantage of AMBs is that they enable the rotor to revolve with no physical contact and provide rotary blood pumps with better performances such as low hemolysis level. Fundamentally, AMB systems consist of three parts, proximity sensors for distance detection, microprocessor for control algorithm and power amplifiers for actuating electromagnets. We have developed an inductive type proximity sensor with satisfactory characteristics that can be used in AMB systems. Frequency response was flat at least up to 10 kHz and sensitivity, resolution$(>5{\mu}m)$ and sensing range(<5mm) of the sensor could be adjustable for various purposes. The characteristics of the completed model showed to have satisfactory behaviors compared with the commercially available ones that already appeared to have reliable behaviors in AMB systems.

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Hardware implementation of a pulse-type neuron chain with a synapse function for hodgkin-huxley model (호지킨-헉슬리 모델을 위한 시냅스 기능을 지닌 신경세포 체인의 하드웨어 구현)

  • Jung, Jin-Woo;Kwon, Bo-Min;Park, Ju-Hong;Kim, Jin-Su;Lee, Je-Won;Park, Yong-Su;Song, Han-Jung
    • Journal of Sensor Science and Technology
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    • v.18 no.2
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    • pp.128-134
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    • 2009
  • Integrated circuit of a new neuron chain with a synapse function for Hodgkin-Huxley model which is a good electrical model about a real biological neuron is implemented in a $0.5{\mu}m$ 1 poly 2 metal CMOS technology. Pulse type neuron chain consist of series connected current controlled single neurons through synapses. For the realization of the single neuron, a pair of voltage mode oscillators using operational transconductance amplifiers and capacitors is used. The synapse block which is a connection element between neurons consist of a voltage-current conversion circuit using current mirror. SPICE simulation results of the proposed circuit show 160 mV amplitude pulse output and propagation of the signal through synapses. Measurements of the fabricated pulse type neuron chip in condition of ${\pm}2.5\;V$ power supply are shown and compared with the simulated results.