• Proceedings of the Optical Society of Korea Conference
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• 2005.07a
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• pp.292-293
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• 2005

• Journal of Powder Materials
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• v.10 no.3
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• pp.190-194
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• 2003

Thin Ag films deposited onto $SiO_2/Si$ substrates by DC magnetron sputtering and thereafter annealed ,it temperatures 100-50$0^{\circ}C$ are investigated by scanning tunneling and atomic forte microscopy. It is shown that the film surface topography and microstructure are considerably changed as a result of annealing. To provide a quantitative estimation of the surface topography changes of Ag films the surface fractal dimension was calculated. Elasticity and hardness of the films are studied by a nanoindentation technique. The films are found to have value of elastic modulus close to that of bulk silver while their hardness and yield stress are essentially higher.

• Journal of the Korean institute of surface engineering
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• v.30 no.2
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• pp.136-143
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• 1997

The photvoltaic power system has received considerable attention as the petroleumalterative energies to the environmental problems in the wored scale. $CuLnSe_2$is one ofthe most promising materials for the fabrication of large-area modules and low cost photovoltaic devices. Sulfur solute CuInSe2 thin films were prepared by RF sputtering using powder targer which were previously compacted by powder of $Cu_2Se, \;In_2Se_3, \;Cu_2S, \;and\;In_2S_3$ in various ratios. The results induicated that the sulfur ratio, the(112) texture, and the energy band gap were increased by the increase of the S/(S+Se) that was controlled by stoichiometric compound. The energy band gap can be shifted from 1.04eV to 1.50eV by abjusting the S/(S+Se) ratio, which maich it possible to obtain perfect match to the solar spectrum.

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.174-179
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• 2012

In this study, we demonstrated a simple and eco-friendly method, including mechanical polishing and attrition milling processes, to recycle sputtered indium tin oxide targets to indium tin oxide nanopowders and targets for sputtered transparent conductive films. The utilized indium tin oxide target was first pulverized to a powder of sub- to a few- micrometer size by polishing using a diamond particle coated polishing wheel. The calcination of the crushed indium tin oxide powder was carried out at $1000^{\circ}C$ for 1 h, based on the thermal behavior of the indium tin oxide powder; then, the powders were downsized to nanometer size by attrition milling. The average particle size of the indium tin oxide nanopowder was decreased by increasing attrition milling time and was approximately 30 nm after attrition milling for 15 h. The morphology, chemical composition, and microstructure of the recycled indium tin oxide nanopowder were investigated by FE-SEM, EDX, and TEM. A fully dense indium tin oxide sintered specimen with 97.4% of relative density was fabricated using the recycled indium tin oxide nanopowders under atmospheric pressure at $1500^{\circ}C$ for 4 h. The microstructure, phase, and purity of the indium tin oxide target were examined by FE-SEM, XRD, and ICP-MS.

• Journal of Powder Materials
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• v.23 no.1
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• pp.15-20
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• 2016

Niobium is one of the most important and rarest metals, and is used in the electronic and energy industries. However, it's extremely high melting point and oxygen affinity limits the manufacture of Nb coating materials. Here, a Nb coating material is manufactured using a kinetic spray process followed by hot isotactic pressing to improve its properties. OM (optical microscope), XRD (X-ray diffraction), SEM (scanning electron microscopy), and Vickers hardness and EPMA (electron probe micro analyzer) tests are employed to investigate the macroscopic properties of the manufactured Nb materials. The powder used to manufacture the material has angular-shaped particles with an average particle size of $23.8{\mu}m$. The porosity and hardness of the manufactured Nb material are 0.18% and 221 Hv, respectively. Additional HIP is applied to the manufactured Nb material for 4 h under an Ar atmosphere after which the porosity decreases to 0.08% and the hardness increases to 253 Hv. Phase analysis after the HIP shows the presence of only pure Nb. The study also discusses the possibility of using the manufactured Nb material as a sputtering target.

• Journal of Powder Materials
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• v.18 no.3
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• pp.256-261
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• 2011

In order to make a $Cu_2ZnSnSe_4$ (CZTSe) sputtering target sintered for solar cell application, synthesis of CZTSe compound by solid state reaction of Cu, Zn, Sn and Se mixed powders and effects of ball milling condition on sinterability such as ball size, combination of ball size, ball milling time and sintering temperature, was investigated. As a result of this research, sintering at $500^{\circ}C$ after ball milling using mixed balls of 1 mm and 3 mm for 72 hours was the optimum condition to synthesis near stoichiometric composition of $Cu_2ZnSnSe_4$ and to prepare sintered pellet with high density relatively.

• Journal of Powder Materials
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• v.23 no.1
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• pp.21-25
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• 2016

The microstructural properties and electrical characteristics of sputtering films deposited with a Cu-Ga target are analyzed. The Cu-Ga target is prepared using the cold spray process and shows generally uniform composition distributions, as suggested by secondary ion mass spectrometer (SIMS) data. Characteristics of the sputtered Cu-Ga films are investigated at three positions (top, center and bottom) of the Cu-Ga target by X-ray diffraction (XRD), SIMS, 4-point probe and transmission electron microscopy (TEM) analysis methods. The results show that the Cu-Ga films are composed of hexagonal and unknown phases, and they have similar distributions of composition and resistivity at the top, center, and bottom regions of the Cu-Ga target. It demonstrates that these films have uniform properties regardless of the position on the Cu-Ga target. In conclusion, the cold spray process is expected to be a useful method for preparing sputter targets.

• Journal of Powder Materials
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• v.18 no.6
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• pp.552-561
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• 2011

This study attempted to manufacture a Cu-15 at.%Ga coating layer via the cold spray process and investigated the effect of heat treatment environment on the properties of cold sprayed coating material. Three kinds of heat treatment environments, $5%H_2$+argon, pure argon, and vacuum were used in this study. Annealing treatments were conducted at $200{\sim}800^{\circ}C$/1 hr. With the cold sprayed coating layer, pure ${\alpha}$-Cu and small amounts of $Ga_2O_3$ were detected in the XRD, EDS, EPMA analyses. Porosity significantly decreased and hardness also decreased with increasing annealing temperature. The inhomogeneous dendritic microstructure of cold sprayed coating material changed to the homogeneous and dense one (microstructural evolution) with annealing heat treatment. Oxides near the interface of particles could be reduced by heat treatment especially in vacuum and argon environments. Vacuum environment during heat treatment was suggested to be most effective one to improve the densification and purification properties of cold sprayed Cu-15 at.%Ga coating material.

• Journal of Powder Materials
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• v.21 no.5
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• pp.355-359
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• 2014

Pt nanopowder-dispersed $SiO_2$ (SOP) films were prepared by RF co-sputtering method using Pt and $SiO_2$ targets in Ar atmosphere. The growth rate and Pt content in the film were controlled by means of manipulating the RF power of Pt target while that of $SiO_2$ was fixed. The roughness of the film was increased with increasing the power of Pt target, which was mainly due to the increment of the size and planar density of Pt nanopowder. It was revealed that SOP film formed at 10, 15, 20 W of Pt power contained 2.3, 2.7, and 3.0 nm of spherical Pt nanopowder, respectively. Electrical conductivity of SOP films was exponentially increased with increasing Pt power as one can expect. Interestingly, conductivity of SOP films from Hall effect measurement was greater than that from DC I-V measurement, which was explained by the significant increase of electron density.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.1
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• pp.191-196
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• 2010

Aluminum doped zinc oxide (AZO) films have been prepared on Coming 7059 glass substrates by r.f. magnetron sputtering method. A powder target instead of a conventional sintered ceramic target was used in order to improve the utilization efficiency of the target and reduce the cost of the film deposition process. The influence of sputter pressure on the structural, electrical, and optical properties of AZO films were studied. The AZO films had hexagonal wurtzite structure with a preferred c-axis orientation, regardless of sputter pressure and target types. The crystallinity and degree of orientation was increased by increasing the sputter pressure. For higher sputtering pressures, a reduction of the resistivity was observed due to a increase on the mobility and the carrier concentration. The lowest resistivity of $6.5{\times}10^{-3}\;{\Omega}-cm$ and the average transmittance of 80% can be obtained for films deposited at 15 mTorr.