• 열처리공학회지
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• 제25권2호
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• pp.85-89
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• 2012

Transparent conductive ZnO/Ag/ZnO (ZAZ) multilayer films were deposited by Radio frequency (RF) magnetron sputtering and direct current (DC) magnetron sputtering. The effects of post deposition vacuum annealing temperature on the structural, electrical and optical properties of the ZAZ multilayer films were investigated. The thickness of ZAZ films is kept constant at ZnO 50 nm/Ag 5nm/ZnO 45 nm, while the vacuum annealing temperatures were varied from 200 and $400^{\circ}C$, respectively. As-deposited ZAZ films exhibit a sheet resistance of $6.1{\Omega}/{\Box}$ and optical transmittance of 72.7%. By increasing annealing temperature to $200^{\circ}C$, the resistivity decreased to as low as $5.3{\Omega}/{\Box}$ and optical transmittance also increased to as high as 82.1%. Post-deposition annealing of ZAZ multilayer films lead to considerably lower electrical resistivity and higher optical transparency, simultaneously by increased crystallization of the films.

• Journal of information and communication convergence engineering
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• 제3권1호
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• pp.23-27
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• 2005

In this paper, the effects of various annealing conditions on the resonance characteristics of ZnO-based FBAR devices are compared. Several FBAR device samples were fabricated by using three different annealing methods while one sample remained non-annealed as a reference for comparison. Return loss ($S_11$) could be significantly improved by both Bragg reflector-annealing and/or post-annealing. Especially, the use of the combined annealings resulted in most desirable resonance improvement compared with the Bragg reflector-annealing or post-annealing method alone.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.460-461
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• 2009

We studied the effects of post-annealing treatment on poly(3-hexylthiophene)(P3HT, donor):[6,6]-phenyl $C_{61}$ butyric acid methyl ester(PCBM, acceptor) blend film as an active layer in the organic solar cells(OSCs). For the formation of the active layer, 3 wt.% P3HT:PCBM solution in chlorobenzene were deposited by spin-coating method. In order to optimize the performance of OSCs, the P3HT crystallization and the redistribution of PCBM cluster at P3HT:PCBM composition as a function of post-annealing condition from room temperature to $200^{\circ}C$ were measured by the Hall effect and the UV-vis Spectrophotometer. We thought that the improved efficiency in the OSCs with post-annealing treatment at $150^{\circ}C$ can be explained by the efficient separation or collection of the photogenerated excitons at donor-acceptor interface by P3HT crystallization.

• 한국전기전자재료학회논문지
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• 제19권7호
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• pp.611-617
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• 2006

We report the preparation of N doped, p-type ZnO films by post-annealing in $NH_3$ ambient. The properties were examined by XRD, Hall-effect measurement, PL, and SIMS. ZnO films showed better crystallinity and electron concentration of $10^{15}-10^{17}/cm^3$ with post-annealing in $NH_3$ ambient. These films were converted to p-type ZnO by activation thermal annealing process at $800^{\circ}C$ under $N_2$ ambient. The electrical properties of the p-type ZnO showed a hole concentration of $1.06\times10^{16}/cm^3$, a mobility of $15.8cm^2/V{\cdot}s$, and a resistivity of $40.18\Omega{\cdot}cm$. The N doped ZnO films showed a strong photoluminescence peak at 3.306 eV at 13 K, which is closely related to neutral acceptor bound excitons of the p-type ZnO:N. In the SIMS spectra, the incorporation of nitrogen was confirmed.

• 한국세라믹학회지
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• 제35권9호
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• pp.945-952
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• 1998

Ferroelectric Sr0.8Bi2.4Ta2O9 stock solutions were prepared by MOD(Metaloganic Decompostion) process. The phase transformation for the layered perovskite of the SBT thin films by changing RTA(Rapid her-mal Annealing) temperatuer from 700$^{\circ}C$to 780$^{\circ}C$ were observed using XRD and SEM. Layered perovskite phase began to appear above 740$^{\circ}C$ and then SBT thin films were annealed at 800$^{\circ}C$ for 1hr for its com-plete crystallization. The specimens showed well shaped hysteresis curves without post annealing that car-ried out after deposition of Pt top electrode. The SBT thin films showed the asymmetric ferroelectric pro-perties. It was confirmed that the properties were caused by interface effect to SBT and electrode by leak-age current density measurement and asymmetric properties reduced by post annealing. At post annealing temperature of 800$^{\circ}C$ remanant polarization values (2Pr) were 6.7 9 ${\mu}$C/cm2 and those of leakage current densities were 3.73${\times}$10-7 1.32${\times}$10-6 A/cm2 at 3, 5V respectively. Also bismuth bonding types of SBT thin film surface were observed by XPS.

• 한국세라믹학회지
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• 제43권9호
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• pp.527-531
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• 2006

In order to study the influence of post-annealing treatment on the frequency characteristics of the Li doped ZnO(Li:ZnO) FBAR(Film Bulk Acoustic Resonator) device, we investigated the material and electrical properties of Li:ZnO films in the annealing temperature range from 300 to $500^{\circ}C$. In our samples, as annealing temperature was increased, Li:ZnO films showed the improvement of high c-axis orientation and resistance value with relieved stress and low surface roughness. In addition to, the return loss in the frequency property of fabricated FBAR was improved by annealing treatment from 24.9 to 29.8dB. From experimental results, the optimum post-annealing temperature for FBAR is $500^{\circ}C$ and it can obtain excellent Li:ZnO FBAR performance with stronger c-axis orientation, smoother surface, relieved stress, and lower loss factor.

• 한국자기학회지
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• 제25권5호
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• pp.144-148
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• 2015

스피넬 결정구조를 지니는 $CoMn_2O_4$ 박막을 증착하였으며 이들 박막의 물리적 특성을 후열처리 이전과 이후로 비교 조사하였다. 증착온도인 $720^{\circ}C$보다 낮은 $700^{\circ}C$에서의 후열처리 과정 이후, 열처리 이전의 불분명했던 tetragonal 결정구조가 분명하여졌으며 이는 곧 표면상태의 변화로도 관측되었다. 자성특성의 경우 약 100 K에서 다결정 형태의 벌크에서는 측정할 수 없었던 상전이가 관측되었다. 상전이온도 이상의 온도에서는 전형적인 강자성 특성을 보이는 반면 상전이온도 이하에서는 페리자성 특성을 보였다. 특히 열처리 이후에는 페리자성 특성은 매우 뚜렷하여졌다. 이와 같은 결과는 후열처리과정이 $CoMn_2O_4$ 박막의 물리적 특성을 결정짓는데 필수적임을 의미한다.

• 한국결정성장학회지
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• 제18권1호
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• pp.50-55
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• 2008

졸-겔 공정을 이용하여 유리기판 위에 Al-doped ZnO(AZO) 박막을 제조하였고, AZO 박막의 특성에 대하여 Al 전구체 종류 및 post-annealing 온도가 미치는 영향에 대하여 고찰하였다. AZO 박막 제조용 졸은 zinc acetate, EtOH, MEA 등을 사용하여 제조하였고, Al doping 을 위한 전구체로는 aluminum nitrate 와 aluminum chloride 를 사용하였다. Sol 내의 Zn 농도는 0.5 mol/l 로 하였고, Al doping 양은 Zn 대비 1 at%로 고정하였다. 유리기판 위에 졸을 spin-coating 한 후 $550^{\circ}C$에서 2 시간 동안 열처리한 후, $N_2$와 $H_2$의 비가 9 : 1인 환원 분위기 내에서 $300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C$인 온도에서 2시간 동안 post-annealing을 진행하였다. 제조된 AZO 박막의 구조적, 전기적, 광학적 특성은 XRD, FE-SEM, AFM, Hall effect measurement system 및 UV-Visible spectroscopy를 이용하여 분석하였다. Al 전구체로서 aluminum nitrate 를 사용한 경우가 aluminum chloride 를 사용하여 제조한 AZO 박막보다 우수한 광학적, 전기적 특성을 나타내었으며, post-annealing 온도가 증가함에 따라 비저항과 투과율은 감소하였다. $500^{\circ}C$에서 post-annealing한 AZO 박막의 전기비저항 값은 $2{\times}10^{-3}{\Omega}{\cdot}cm$이었고, 투과율은 $300^{\circ}C$에서 91%로 가장 높게 나타났다.

• 한국결정성장학회지
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• 제12권5호
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• pp.247-252
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• 2002

$(Pb_{1-x}La_x)TiO_3$ (x = 0.1) 박막을 초음파분무 MOCVD법으로 ITO-coated glass 기판 위에 제조하였다. PLT 박막 제조 시 후열처리 및 seeding layer가 결정화 및 미세구조, 전기적 특성에 대한 영향을 알아보았다. 후열처리에 의하여 박막의 결정성은 향상되었고 미세구조에도 영향을 주었으며, 전기적 특성은 이들 특성의 변화에 의해서 향상되었다. 그리고 seeding layer에 의한 핵 생성자리 제공에 의하여 결정성의 향상과 grain 크기의 증가에 의하여 박막의 전기적 특성 또한 향상되었다. Seeding layer를 가지고 60분 동안 후열처리를 한 박막이 가장 우수한 전기적 특성을 나타내었으며 이 박막의 1 kHz에서 유전 상수는 213을 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.117-118
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• 2008

High-pressure deuterium annealing process is proposed and investigated for enhanced electrical and reliability properties of 512Mb DDR2 DRAM without increase in process complexity. High pressure deuterium annealing (HPDA) introduced during post metal anneal (PMA) improves not only DRAM performance but also reliability characteristics of MOSFET. Compared with a control sample annealed in a conventional forming gas, additional annealing in a high pressure deuterium ambient at $400^{\circ}C$ for 30 min decreased G1DL current and junction leakage. The improvements can be explained by deuterium incorporation at $SiO_2$/Si substrate interface near isolation trench edge.