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Effects of post-annealing and seeding layers on electrical properties of PLT thin films by MOCVD using ultrasonic spraying  

이진홍 (경북대학교 무기재료공학과)
김기현 (경북대학교 무기재료공학과)
박병옥 (경북대학교 무기재료공학과)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.12, no.5, 2002 , pp. 247-252 More about this Journal
Abstract
$(Pb_{1-x}La_x)TiO_3$ (x = 0.1) thin films were prepared on ITO-coated glass substrates by metal organic chemical vapor deposition using ultrasonic spraying. Effects of the post-annealing and the seeding layer on crystallization, microstructures and electrical properties of thin films were investigated. Dielectric constants of films increased due to the modification of crystallization and the changing of a surface morphology by applying the post-annealing. In addition, as the application of PT seed- ing layer offered nucleation sites to PLT thin films, electrical properties of films were enhanced by the increase of crys-tallinity and grain size. The dielectric constant of the films post-heated for 60 min and with a seeding layer was 213 at 1 kHz.
Keywords
PLT thin films; MOCVD using ultrasonic spraying; Post-annealing; Seeding layer;
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