• 제목/요약/키워드: Porous Cu

검색결과 182건 처리시간 0.025초

CVD법에 의한 Si(111) 기판에 YBaCuO계 초전도 박막의 제조 (Preparation of YBaCuO System Superconducting Thin Films on Si(111) substrates by Chemical Vapor Deposition)

  • 양석우;김영순;신형식
    • 공업화학
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    • 제8권4호
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    • pp.589-594
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    • 1997
  • 화학증착법을 통하여 $650^{\circ}C$의 증착온도와 0.0126Torr의 산소분압인 증착조건에서 원료물질로 $\beta$-diketonates 킬레이트 화합물을 사용하여 Si(111) 및 $SrTiO_3(100)$ 기판에 $YBa_2Cu_3O_y$ 고온 초전도 박막을 제조하였다. $SrTiO_3(100)$기판에서 제조된 박막의 $T_{c,onset}$$T_{c.0}$는 각각 91K와 87K로 나타났다. 또한, Si(111)기판에서 제조된 박막의 $T_{c,onset}$은 91K였지만 $T_{c.0}$는 액체질소 비등점(77.3K)에서는 보이지 않았다. $SrTiO_3(100)$에 증착된 초전도 박막은 치밀하고 2차원적으로 배열된 미세구조를 갖고 있는 반면, Si(111)에 증착된 초전도 박막은 상대적으로 기공이 많으며 무질서한 미세구조를 형성하였다.

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Enhancement of Pool Boiling Heat Transfer in Water Using Sintered Copper Microporous Coatings

  • Jun, Seongchul;Kim, Jinsub;Son, Donggun;Kim, Hwan Yeol;You, Seung M.
    • Nuclear Engineering and Technology
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    • 제48권4호
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    • pp.932-940
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    • 2016
  • Pool boiling heat transfer of water saturated at atmospheric pressure was investigated experimentally on Cu surfaces with high-temperature, thermally-conductive, microporous coatings (HTCMC). The coatings were created by sintering Cu powders on Cu surfaces in a nitrogen gas environment. A parametric study of the effects of particle size and coating thickness was conducted using three average particle sizes (APSs) of $10{\mu}m$, $25{\mu}m$, and $67{\mu}m$ and various coating thicknesses. It was found that nucleate boiling heat transfer (NBHT) and critical heat flux (CHF) were enhanced significantly for sintered microporous coatings. This is believed to have resulted from the random porous structures that appear to include reentrant type cavities. The maximum NBHT coefficient was measured to be approximately $400kW/m^2k$ with APS $67{\mu}m$ and $296{\mu}m$ coating thicknesses. This value is approximately eight times higher than that of a plain Cu surface. The maximum CHF observed was $2.1MW/m^2$ at APS $67{\mu}m$ and $428{\mu}m$ coating thicknesses, which is approximately double the CHF of a plain Cu surface. The enhancement of NBHT and CHF appeared to increase as the particle size increased in the tested range. However, two larger particle sizes ($25{\mu}m$ and $67{\mu}m$) showed a similar level of enhancement.

양성전해질 고정막의 제조 및 그것의 금속이온 흡착 특성 (Preparation of Ampholyte Grafted Hollow-fiber Membrane and Its Adsorption Characteristic on Metallic Ions)

  • 최혁준;박상진;김민
    • 멤브레인
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    • 제20권2호
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    • pp.151-158
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    • 2010
  • 본 연구는 양성전해질막의 금속이온 특성을 조사하기 위하여 Taurine (TAU)막을 제조하였다. 제조방법으로는 방사선조사법에 의한 Glycidyl methacrylate (GMA)의 중공사막 표면위에 고정시키고, 이후 Taurine의 염기성 부분인 $-NH_2$기(amine fuction)와 GMA의 glycididyl의 개환 반응을 통하여 안정된 막을 형성하도록 하였다. 한편 TAU막과 비교를 위해 GMA가 고정된 중공사 막에 Sodium sulfite로 화학적 결합을 형성 SS막을 제조하였다. 이렇게 제조된 TAU막의 타우린 밀도가 높아져도 투과유속은 0.9 m/h로 변화 없으나, SS막은 술폰산기의 밀도가 높아짐에 따라 투과유속이 급격히 감소하는 것을 나타내었다. 타우린 밀도가 0.8 mmol/g인 막을 사용한 결과 금속이온의 량은 Cu > Cd > Mg > Sb > Pb의 순으로 나타내었다. 전반적으로 타우린막은 전화율과 밀도의 증가에 따라 많은 양의 금속이온 흡착과 높은 투과유속을 나타내었다.

Iron Aluminide-$SiC_p$ 혼합 예비성형체를 사용한 Al합금기 복합재료의 내마모 특성 (Wear Resistance of Al Alloy Matrix Composites Using Porous Iron Aluminide-$SiC_p$ Preforms)

  • 차재상;오선훈;최답천
    • 한국주조공학회지
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    • 제23권1호
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    • pp.30-39
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    • 2003
  • Porous hybrid preforms were fabricated by reactive sintering using the compacts consisting of SiC particles, Fe and Al powders. Squeeze casting processing was employed to produce the composite in which the matrix phase is Al-Si7Mg. The microstructural change and wear resistance of the composites were investigated in terms of an amount of SiC particles. The wear loss was increased with increasing the contact pressure in the alloy containing SiC particles coated with Cu. The most drastic change was found to the specimen tested at 2.5 MPa of contact pressure. Concerning the alloys containing SiC particles coated with Ni-P, a drastic increase in the wear loss exhibited at 2 MPa of contact pressure in those alloys containing 4 and 8 wt. % of SiC particles coated with Ni-P. In the alloy containing 16 wt. % a proportional increase in wear loss was observed to the change of contact pressure. With respecting to the sliding velocity, the wear loss of the alloy containing SiC particles coated with Cu increased at the initial stage of wear process and then decreased. Similar result was found in the alloys containing SiC particles coated with Ni-P. On the basis of the present results obtained, it was found that wear resistance of the alloys tested was improved to show in the order of the alloy reinforced by coated SiC particles > by uncoated SiC particles > by intermetallic compound without SiC particles.

Polytetrafluoroethylene 분말 현탁액을 통한 다공성 박막 제조 및 에너지 발생소자 응용 (Fabrication of Porous Polytetrafluoroethylene thin Film from Powder Dispersion-solution for Energy Nanogenerator Applications)

  • 박일규
    • 한국분말재료학회지
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    • 제24권2호
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    • pp.102-107
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    • 2017
  • Porous polytetrafluoroethylene (PTFE) thin films are fabricated by spin-coating using a dispersion solution containing PTFE powders, and their crystalline properties are investigated after thermal annealing at various temperatures ranging from 300 to $500^{\circ}C$. Before thermal annealing, the film is densely packed and consists of many granular particles 200-300 nm in diameter. However, after thermal annealing, the film contains many voids and fibrous grains on the surface. In addition, the film thickness decreases after thermal annealing owing to evaporation of the surfactant, binder, and solvent composing the PTFE dispersion solution. The film thickness is systematically controlled from 2 to $6.5{\mu}m$ by decreasing the spin speed from 1,500 to 500 rpm. A triboelectric nanogenerator is fabricated by spin-coating PTFE thin films onto polished Cu foils, where they act as an active layer to convert mechanical energy to electrical energy. A triboelectric nanogenerator consisting of a PTFE layer and Al metal foil pair shows typical output characteristics, exhibiting positive and negative peaks during applied strain and relief cycles due to charging and discharging of electrical charge carriers. Further, the voltage and current outputs increase with increasing strain cycle owing to accumulation of electrical charge carriers during charge-discharge.

Preceramic Polymer를 이용한 마이크로셀룰라 코디어라이트 세라믹스의 합성 (Synthesis of Microcellular Cordierite Ceramics Derived from a Preceramic Polymer)

  • 송인혁;김영미;김해두;김영욱
    • 한국세라믹학회지
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    • 제44권5호
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    • pp.184-189
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    • 2007
  • In this study, a novel-processing route for producing microcellular cordierite ceramics has been developed. The proposed strategy for making the microcellular cordierite ceramics involves three steps: (i) fabricating ceramic-filled preceramic foams by heating a mixture of polysiloxane, expandable microspheres, talc, and alumina in a mold, (ii) cross-linking the foamed body, and (iii) transforming the body into microcellular cordierite ceramics by sintering. Cu jig was used for near net shaping in the foaming step. The experimental variables such as the shape of foaming jig and the content of expendable microsphere were investigated. By controlling the content of expendable microsphere, it was possible to make the porous cordierite ceramics with cell density of ${\sim}1.0{\times}10^9\;cells/cm^3$.

스퍼터 공정변수가 팔라듐 합금 수소분리막의 특성에 미치는 영향 (The Effect of Sputtering Process Variables on the Properties of Pd Alloy Hydrogen Separation Membranes)

  • 한재윤;주새롬;이준형;박동건;김동원
    • 한국표면공학회지
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    • 제46권6호
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    • pp.248-257
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    • 2013
  • It is generally recognized that thin Pd-Cu alloy films fabricated by sputtering show a wide range of microstructures and properties, both of which are highly dependent on the sputtering conditions. In view of this, the present study aims to investigate the relationship between the performance of hydrogen separation membranes and the microstructure of Pd alloy films depending on sputtering deposition conditions such as substrate temperature, working pressure, and DC power. We fabricated thin and dense Pd-Cu alloy membranes by the micro-polishing of porous Ni support, an advanced Pd-Cu sputtered multi-deposition under the conditions of high substrate temperature / low working pressure / high DC power, and a followed by Cu-reflow heat-treatment. The result of a hydrogen permeation test indicated that the selectivity for $H_2/N_2$ was infinite because of the void-free and dense surface of the Pd alloy membranes, and the hydrogen permeability was 10.5 $ml{\cdot}cm^{-2}{\cdot}min^{-1}{\cdot}atm^{-1}$ for a 6 ${\mu}m$ membrane thickness.

Reaction Path of Cu2ZnSnS4 Nanoparticles by a Solvothermal Method Using Copper Acetate, Zinc Acetate, Tin Chloride and Sulfur in Diethylenetriamine Solvent

  • Chalapathy, R.B.V.;Jung, Gwang Sun;Ko, Young Min;Ahn, Byung Tae;Kown, HyukSang
    • Current Photovoltaic Research
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    • 제1권2호
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    • pp.109-114
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    • 2013
  • $Cu_2ZnSnS_4$ (CZTS) nanoparticles were synthesized by a solvothermal method using copper (II) acetate, zinc acetate, tin chloride, and sulfur in diethylenetriamine solvent. Binary sulfide particles such as CuS, ZnS, SnS, and $SnS_2$ were obtained at $180^{\circ}C$; single-phase CZTS nanoparticles were obtained at $280^{\circ}C$. CZTS nanoparticles with spherical shape and grain size of 40 to 60 nm were obtained at $280^{\circ}C$. In the middle of 180 and $280^{\circ}C$, CZTS and ZnS phases were found. The time variation of reaction at $280^{\circ}C$ revealed that an amorphous state formed first instead of binary phases and then the amorphous phase was converted to crystalline CZTS state; it is different reaction path way from conventional solid-state reaction path of which binary phases react to form CZTS. CZTS films deposited and annealed from single-phase nanoparticles showed porous microstructure and poor adhesion. This indicates that a combination of CZTS and other flux phase is necessary to have a dense film for device fabrication.

비진공법 CuInSe2 태양전지에서 MoSe2의 생성을 억제하기 위한 산화 몰리브데늄 확산장벽 층 (Molybdenum Oxides as Diffusion Barrier Layers against MoSe2 Formation in A Nonvacuum Process for CuInSe2 Solar Cells)

  • 이병석;이도권
    • Current Photovoltaic Research
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    • 제3권3호
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    • pp.85-90
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    • 2015
  • Two-step processes for preparing $Cu(In,Ga)Se_2$ absorber layers consist of precursor layer formation and subsequent annealing in a Se-containing atmosphere. Among the various deposition methods for precursor layer, the nonvacuum (wet) processes have been spotlighted as alternatives to vacuum-based methods due to their potential to realize low-cost, scalable PV devices. However, due to its porous nature, the precursor layer deposited on Mo substrate by nonvacuum methods often suffers from thick $MoSe_2$ formation during selenization under a high Se vapor pressure. On the contrary, selenization under a low Se pressure to avoid $MoSe_2$ formation typically leads to low crystal quality of absorber films. Although TiN has been reported as a diffusion barrier against Se, the additional sputtering to deposit TiN layer may induce the complexity of fabrication process and nullify the advantages of nonvacuum deposition of absorber film. In this work, Mo oxide layers via thermal oxidation of Mo substrate have been explored as an alternative diffusion barrier. The morphology and phase evolution was examined as a function of oxidation temperature. The resulting Mo/Mo oxides double layers were employed as a back contact electrode for $CuInSe_2$ solar cells and were found to effectively suppress the formation of $MoSe_2$ layer.

다공질 SiC 반도체와 Ag계 합금의 접합 (Junction of Porous SiC Semiconductor and Ag Alloy)

  • 배철훈
    • 한국산학기술학회논문지
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    • 제19권3호
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    • pp.576-583
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    • 2018
  • 탄화규소는 실리콘과 비교시 큰 에너지 밴드 갭을 갖고, 불순물 도핑에 의해 p형 및 n형 전도의 제어가 용이해서 고온용 전자부품 소재로 활용이 가능한 재료이다. 특히 ${\beta}$-SiC 분말로부터 제조한 다공질 n형 SiC 세라믹스의 경우, $800{\sim}1000^{\circ}C$에서 높은 열전 변환 효율을 나타내었다. SiC 열전 변환 반도체를 응용하기 위해서는 변환 성능지수도 중요하지만 $800^{\circ}C$ 이상에서 사용할 수 있는 고온용 금속전극 또한 필수적이다. 일반적으로 세라믹스는 대부분의 보편적인 용접용 금속과는 우수한 젖음을 갖지 못 하지만, 활성 첨가물을 고용시킨 합금의 경우, 계면 화학종들의 변화가 가능해서 젖음과 결합의 정도를 증진시킬 수 있다. 액체가 고체 표면을 적시면 액체-고체간 접합면의 에너지는 고체의 표면에너지 보다 작아지고 그 결과 액체가 고체 표면에서 넓게 퍼지면서 모세 틈새로 침투할 수 있는 구동력을 갖게 된다. 따라서 본 연구에서는 비교적 낮은 융점을 갖는 Ag를 이용해서 다공질 SiC 반도체 / Ag 및 Ag 합금 / SiC 및 알루미나 기판간의 접합에 대해 연구하였고, Ag-20Ti-20Cu 필러 메탈의 경우 SiC 반도체의 고온용 전극으로 적용 가능할 것으로 나타났다.