• Transactions on Electrical and Electronic Materials
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• 제1권1호
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• pp.45-52
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• 2000

The conduction characteristics in Oriented polypropylene (OPP) film were studied over electric field intensities between 10 M/V m and 300 M/V m . The range of the conduction characteristics was divided in to five regions with increasing field intensity. Particularly, in the region from 70 Mb/m to 82 MV/m voltage-controlled negative resistance was displayed. In the negative resistance region current oscillations were also observed the negative resistance characteristics could by explaine by Gibbons theory.

• 전자공학회논문지D
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• 제36D권6호
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• pp.44-51
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• 1999

High density DRAM의 cell capacitor로 촉망 받고 있는 고유전체 BST박막 커패시터의 저 전계(<0.2MV/cm) 영역에서의 전기전도 현상을 분석하였다. 저 전계 영역에서 Pt/BST/Pt구조의 MIM 커패시터에 일정 전계를 인가한 후 전류를 측정하는 I(t)방법을 이용하여 유전완화전류와 누설전류를 분리해내어 박막의 측정온도 변화, 전계의 크기, 인가방향 변화, 후속 열처리에 따른 BST 박막의 전기전도 기구를 분석하였다. 그 결과, 유전완화전류는 Hoppiong process에 의한 BST박막내부의 trap된 전자들의 이동에 의한 전하재배치로 설명되어지며, 누설전류도 박막내의 trap에 의한 poole-Frenkel process에 의한 것임을 알 수 있었다. 그리고 각 전류성분에 기억하고 있는 trap이 BST박막내의 산호 결핍임을 추정하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.318-322
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• 1997

The (Sr$_{l-x}$.Ca$_{x}$)TiO$_3$(0.05$\leq$x$\leq$0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[$^{\circ}C$] in a reducing atmosphere($N_2$gas). After being fired in a reducing atmosphere, metal oxides, CuO, was painted on the both surface of the specimens to diffuse to the grain boundary. They were annealed at 1100[$^{\circ}C$] for 2 hours and cooled to room temperature. The grain boundary was composed of the continuous insulating layers. The capacitance changes slowly and almost linearly in the temperature region of -30~+85[$^{\circ}C$]. The capacitance characteristics appears a stable value within $\pm$10[%]. The conduction mechanism of the specimens observed in the temperature range of 25~125[$^{\circ}C$], and is divined into three regions haying different mechanism as the current increased: the region I below 230[V/cm] shows the ohmic conduction. The region II can be explained by the Poole-Frenkel emission theory, and the region III is dominated by the tunneling effect.ect.

• E2M - 전기 전자와 첨단 소재
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• 제9권10호
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• pp.1001-1007
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• 1996

The conduction mechanisms of the off-current in low temperature (.leq. >$600^{\circ}C$) processed polycrystalline silicon thin film transistors (LTP poly-Si TFT'S) have been systematically studied. Especially, the temperature and bias dependence of the off-current between hydrogenated and nonhydrogenated poly-Si TFT's were investigated and compared. The off-current of nonhydrogenated poly-Si TF's is because of a resistive current at low gate and drain voltage, thermally activated current at high gate and low drain voltage, and Poole-Frenkel emission current in the depletion region near the drain at high gate and drain voltage. After hydrogenation it has shown that the off -current mechanism is caused mainly by thermal activation and that the field-induced current component is suppressed.

• E2M - 전기 전자와 첨단 소재
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• 제10권2호
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• pp.97-104
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• 1997

In this paper, in order to investigate the behavior of charged particles on (Sr.Ca)TiO$_{3}$ ceramics with paraelectric properties, the characteristics of electrical conduction and thermally stimulated current was measured respectively. As a result, the conduction mechanism is divided into three regions having different mechanism as the current increased. The region I below 200[V/Cm] shows the ohmic conduction. The region B between 200[V/cm] and 2000[V/cm] can be explained by the Poole-Frenkel emission theory, and the region III above 2000[V/cm] is dominated by the tunneling effect. The three peaks of TSC were obtained at the temperature of -20[.deg. C], 20[.deg. C] and 80[.deg. C], respectively. The origins of these peaks are that the .alpha. peak observed at -20[.deg. C] looks like to be ascribed to the ionization excitation from donor level in the grain, and the .alpha.' peak observed at 20 [.deg. C] appears to show up by hopping conduction of the trapped carrier of border between the oxidation layer and the grain, and the .betha. peak observed at 80[.deg. C] seems to be resulted from hopping conduction of existing carrier in the trap site of the border between the oxidation and second phase.

• 한국재료학회지
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• 제26권8호
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• pp.412-416
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• 2016

The electrical properties of Au/n-type Ge Schottky contacts with different contact areas were investigated using current-voltage (I-V) measurements. Analyses of the reverse bias current characteristics showed that the Poole-Frenkel effect became strong with decreasing contact area. The contribution of the perimeter current density to the total current density was found to increase with increasing reverse bias voltage. Fitting of the forward bias I-V characteristics by considering various transport models revealed that the tunneling current is dominant in the low forward bias region. The contributions of both the thermionic emission (TE) and the generation-recombination (GR) currents to the total current were similar regardless of the contact area, indicating that these currents mainly flow through the bulk region. In contrast, the contribution of the tunneling current to the total current increased with decreasing contact area. The largest $E_{00}$ value (related to tunneling probability) for the smallest contact area was associated with higher tunneling effect.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권4호
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• pp.159-163
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• 2003

ln this work, we studied electrical characteristics and leakage current mechanism of $Ta_2O_{5}$ MOS(Metal-Oxide-Semiconductor) devices. $Ta_2O_{5}$ thin film (63 nm) was deposited by ALD(Atomic Layer Deposition) method at temperature of 235 $^{\circ}C$. The structures of the $Ta_2O_{5}$ thin films were examined by XRD(X-Ray Diffraction). From XRD, it is found that the structure of $Ta_2O_{5}$ is single phase and orthorhombic. From capacitance-voltage (C-V) anaysis, the dielectric constant was 19.4. The temperature dependence of current density-electric field (J-E) characteristics of $Ta_2O_{5}$ thin film was studied at temperature range of 300 - 423 K. In ohmic region (<0.5 MV/cm), the resistivity was 2.456${\times}10^{14}$ ($\omega{\cdot}cm$ at 348 K. The Schottky emission is dominant at lower temperature range from 300 to 323 K and Poole-Frenkel emission is dominant at higher temperature range from 348 to 423 K.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.41-46
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• 2002

In this work, we studied electrical characteristics and leakage current mechanism of Au/$Ta_2O_5$/Si metal-oxide-semiconductor (MOS) devices. $Ta_2O_5$ thin film (63nm) was deposited by atomic layer deposition (ALD) method at temperature of $235^{\circ}C$. The structures of the $Ta_2O_5$ thin films were examined by X-Ray Diffraction (XRD). From XRD, the structure of $Ta_2O_5$ was single phase and orthorhombic. From capacitance-voltage (C-V) analysis, the dielectric constant was 19.4. The temperature dependence of current-voltage (I-V) characteristics of $Ta_2O_5$ thin film was studied from 300 to 423 K. In ohmic region (<0.5 MVcm${-1}$), the resistivity was $2.4056{\times}10^{14}({\Omega}cm)$ at 348 K. The Schottky emission is dominant in lower temperature range from 300 to 323 K and Poole-Frenkel emission dominant in higher temperature range from 348 to 423 K.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.795-797
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• 1998

A $BaTiO_3$, ferroelectric material, was mixed $SrTiO_3$, $(x)BaTiO_3-(1-x)SrTiO_3$($0.7{\leq}x{\leq}1$) ceramic capacitor with stable electrical properties in high voltage was fabricated. And microstructure, electrical property were investigated with $SrTiO_3$ mol ratio. The shrinkage, open porosity, sintering density were predominated at $9BaTiO_3-0.1SrTiO_3$. Increasing $SrTiO_3$ mol ratio, curie temperature was shifted at low temperature and maximum permittivity was increased. Also, $0.9BaTiO_3-0.1SrTiO_3$ was showed stable dielectric properties at $25{\sim}80[^{\circ}C]$. V-I properties of specimen were observed in the temperature range of $21{\sim}143[^{\circ}C]$, were divided into three regions. The region I below 10[kV/cm] was shown Ohmic conduction, the region II from 10 to 30[kV/cm] was explained by the Poole-Frenkel emission theory and the region III above 30[kV/cm] was analysed by the tunneling effect.