• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.825-828
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• 2005

In this paper, we propose a new nonvolatile unit memory cell and proposal peripheral circuit using the polymer material. Memory that relies on bistable behavior- having tow states associated with different resistances at the same applied voltage - has attracted much interest because of its nonvolatile properties. Such memory may also have other merits, including simplicity of structure and manufacturing, and the small size of memory cells. We have plotted the load line graphs for the use of a polymer memory character, hence we have designed in the band-gap reference shape of a write/erase drive, and then designed in the 2-stage differential amplifier shape of a sense amplifier in the consideration of a low current characteristic of a polymer memory cell. The simulation result shows that is has high gain about 80dB by sensing the very small current.

• 한국환경과학회지
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• 제27권11호
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• pp.1023-1028
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• 2018

Shape memory materials are widely used in high-tech industries. Although shape memory polymers have been developed, they have a disadvantage, only unidirectional resilience. Shape memory polymers with bi-directional recovery resilience have been actively studied. In this study, a bidirectional shape memory polyurethane was synthesized using poly(${\varepsilon}$-caprolactone) diol, methylene dicyclohexyl diisocyanate, and hydroxyethyl acrylate. The first physical curing occurred between hard segments and hydrogen bondings when the solution was dried. The second curing in acrylate groups was performed by UV exposure. A degree of curing was analyzed by infrared spectroscopy. The shape memory properties of 2 step-cured polyurethanes were investigated as a function of UV curing time.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.759-763
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• 2016

We demonstrate the utilization of ion gel gate dielectrics for operating non-volatile transistor memory devices based on polymer semiconductor thin films. The gating process in typical electrolyte-gated polymer transistors occurs upon the penetration and escape of ionic components into the active channel layer, which dopes and dedopes the polymer film, respectively. Therefore, by controlling doping and dedoping processes, electrical current signals through the polymer film can be memorized and erased over a period of time, which constitutes the transistor-type memory devices. It was found that increasing the thickness of polymer films can enhance the memory performance of device including (i) the current signal ratio between its memorized state and erased state and (ii) the retention time of the signal.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권1호
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• pp.51-65
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• 2008

The article presents the recent research development in polymer ferroelectric non-volatile memory. A brief overview is given of the history of ferroelectric memory and device architectures based on inorganic ferroelectric materials. Particular emphasis is made on device elements such as metal/ferroelectric/metal type capacitor, metal-ferroelectric-insulator-semiconductor (MFIS) and ferroelectric field effect transistor (FeFET) with ferroelectric poly(vinylidene fluoride) (PVDF) and its copolymers with trifluoroethylene (TrFE). In addition, various material and process issues for realization of polymer ferroelectric non-volatile memory are discussed, including the control of crystal polymorphs, film thickness, crystallization and crystal orientation and the unconventional patterning techniques.

• 정보저장시스템학회논문집
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• 제11권2호
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• pp.36-40
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• 2015

The demand for flexible devices including solar cells, memories and batteries has increased rapidly over the past decades. In most flexible devices, polymer-based materials are used to enable the mechanical deformations such as bending or folding. Shape Memory Polymers (SMPs) is a high molecular compound polymer with flexibility and shape recovery characteristics. In this work, flexible shape memory device was fabricated by simply coating the conducting material, carbon nano-tube (CNT), on a shape memory polymer. Furthermore, durability of the device under various type of mechanical deformations was assessed. It is believed that the result of this work will aid in realization of a stretchable and wearable electronic device for practical applications.

• 한국항공우주학회지
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• 제45권12호
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• pp.1007-1012
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• 2017

본 연구에서는 우주 안테나 설계용 형상기억 폴리머 시편의 전개 시험을 수행하였다. Poly(cyclooctene)을 dicumyl peroxide를 이용하여 가교시켜 PCO 형상기억 폴리머를 제조하고, 이를 이용하여 지름이 120 mm인 전개형 안테나의 축소 모델을 제작하였다. 전개 성능 시험을 위하여 원형 형태의 형상기억 폴리머 시편을 반으로 접어 임시 형상을 만든 후 두 개의 히터로 형상기억 폴리머의 유리 전이 온도보다 $15^{\circ}C$ 높은 온도로 시편을 가열하였다. 먼저 시편을 수평 설치하여 전개 실험을 수행하였다. 시편의 전개 영상을 디지털 카메라를 사용하여 촬영한 후 트래커 프로그램을 이용하여 분석하였다. 중력의 효과를 최소화하기 위하여 수직 설치하여 다시 실험을 수행하였다. 두 실험의 결과를 비교하여 형상기억 폴리머 시편의 전개 성능을 고찰하였다.

• 대한기계학회논문집A
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• 제21권10호
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• pp.1609-1618
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• 1997

Thermo-mechanical behaviors of polymer matrix composite(PMC) with continuous TiNi fiber are studied using theoretical analysis with 1-D analytical model and numerical analysis with 2-D multi-fiber finite element(FE) model. It is found that both compressive stress in matrix and tensile stress in TiNi fiber are the source of strengthening mechanisms and thermo-mechanical coupling. Thermal expansion of continuous TiNi fiber reinforced PMC has been compared with various mechanical behaviors as a function of fiber volume fraction, degree of pre-strain and modulus ratio between TiNi fiber and polymer matrix. Based on the concept of so-called shape memory composite(SMC) with a permanent shape memory effect, the critical modulus ratio is determined to obtain a smart composite with no or minimum thermal deformation. The critical modulus ratio should be a major factor for design and manufacturing of SMC.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권1호
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• pp.46-50
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• 2008

The effect of physicochemical properties of solvents on the microstructure of polyvinyl carbazole (PVK) film for non-volatile polymer memory was investigated. For the solubilization of PVK molecules and the preparation of PVK films, four solvents with different physicochemical properties of the Hildebrand solubility parameter and vapor pressure were considered: chloroform, tetrahydrofuran (THF), 1,1,2,2-tetrachloroethane (TCE), and N,N-dimehtylformamide (DMF). The solubility of PVK molecules in the solvents was observed by ultravioletvisible spectroscopy. PVK molecules were observed to be more soluble in chloroform, with a low Hildebrand solubility parameter, than solvents with higher values. The aggregated size and micro-/nano-topographical properties of PVK films were characterized using optical and atomic force microscopes. The PVK film cast from chloroform exhibited enhanced surface roughness compared to that from TCE and DMF. It was also confirmed that the microstructure of PVK film has an effect on the performance of non-volatile polymer memory.

• Elastomers and Composites
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• 제45권3호
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• pp.188-198
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• 2010

형상 기억 고분자(shape memory polymers, SMPs)는 일정한 온도 또는 특정 자극이 주어졌을 때 가해진 일시적인 변형으로부터 처음 상태로 되돌아 오는 고분자를 말한다. 이러한 형상 기억 고분자는 각종 산업에서 자가 조립 또는 자가 수리가 가능한 스마트 고분자로 분류되어 고부가가치를 지니고 있다. 특히 형상 기억 고분자의 방열 성능, 전기 전도 성능, 물리적 성능, 광학 성능 등은 다양한 충전제를 도입함으로써 향상될 수 있다. 본 논문에서는 형상 기억 고분자의 기본 원리 및 최근의 형상 기억 고분자 나노 복합재료에 대해 알아본다.

• 한국고분자학회지:고분자과학과기술
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• 제17권2호
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• pp.182-190
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• 2006