대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2005년도 추계종합학술대회
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- Pages.825-828
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- 2005
폴리머 재료를 이용한 새로운 비휘발성 단위 메모리 셀과 주변회로 제안
New nonvolatile unit memory cell and proposal peripheral circuit using the polymer material
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Kim, Jung-Ha
(Division of Electrical and computer engineering, Hanyang University) ;
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Lee, Sang-Sun
(Division of Electrical and computer engineering, Hanyang University)
- 발행 : 2005.11.26
초록
In this paper, we propose a new nonvolatile unit memory cell and proposal peripheral circuit using the polymer material. Memory that relies on bistable behavior- having tow states associated with different resistances at the same applied voltage - has attracted much interest because of its nonvolatile properties. Such memory may also have other merits, including simplicity of structure and manufacturing, and the small size of memory cells. We have plotted the load line graphs for the use of a polymer memory character, hence we have designed in the band-gap reference shape of a write/erase drive, and then designed in the 2-stage differential amplifier shape of a sense amplifier in the consideration of a low current characteristic of a polymer memory cell. The simulation result shows that is has high gain about 80dB by sensing the very small current.
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