• Elastomers and Composites
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• 제40권2호
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• pp.136-142
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• 2005

주사슬에 $SO_2$를 포함하고 곁사슬에는 메소겐기을 유연격자에 연결시킨 액정 poly (allylsulfone) network를 합성하여 이들의 기체 투과도 및 선택투과 특성을 조사하였다. 곁사슬에 메톡시를 갖는 단량체I은 한 개의 알릴단위를 갖고, 단량체II는 양쪽 말단에 두개의 알릴 단위를 가져 network 형성을 제어할 수 있도록 구성되었다 가교밀도의 증가는 고분자 network 내의 분자운동을 제한시키며 단량체 II 함량이 5% 이하인 경우는 segment의 운동이 충분히 펼쳐질 수 있어 등방상으로의 상전이가 일어날수 있다. Poly(II-5 $01/I-OCH_3$ 99)의 기체 투과도는 산소($O_2$)의 경우 2.58 barrel 인데 비하여, 수소($H_2$)의 경우는 18.4 barrer로서, 선택 투과도 ${\alpha}(H_2/O_2)$가 7에 가까우며, 또 선택 투과도 ${\alpha}(H_2/N_2)$는 23.9로서 가장 높은 값을 가짐을 관찰하였다. 가교도가 10%로 증가된 Poly(II-5 $10/I-OCH_3$ 90)의 경우 선택 투과도 ${\alpha}(H_2/N_2)$는 36.8로서 가교도 증가에 따르는 선택투과도의 증가를 보여주었다.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.355-355
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• 2006

In this study, we have applied principal component analysis-based 2D (PCA2D) correlation spectroscopy to the temperature-dependent IR spectra of biodegradable poly(hydroxyalkanoate). PCA2D analysis reveals clearly that there are two components in crystalline band of C=O stretching mode without being hampered by noise. To better understand the thermal behavior of biodegradable poly(hydroxyalkanoate), eigenvalue manipulating transformation (EMT) technique was also employed. By uniformly lowering the power of a set of eigenvalues associated with the original data, the subtle contributions from minor eigenvectors are highlighted. Details of thermal behavior of biodegradable poly(hydroxyalkanoate) studied by PCA2D correlation spectroscopy with EMT will be discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.523-525
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• 2002

The poly-Si thin film can be used in high mobility active matrix liquid-crystal display (AMLCD) and system on panel (SOP). In this paper, poly-Si thin films were grown by novel high temperature process on the molybdenum (Mo) substrate. By applying a high current above 48A on a Mo substrate. We obtained an improved crystalline Si films with the crystallinity over 80%. We exhibit the properties of structural and electrical properties of high temperature poly-Si thin film transistor on the Mo substrates.

• 센서학회지
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• 제17권6호
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• pp.414-417
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• 2008

This paper describes the fabrication of a Pd/poly 3C-SiC Schottky diode and its characteristics, in which the poly 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2{\times}10^{-3}A/cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.445-446
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• 2005

This letter reports the fabrication of polycrystalline silicon thin-film transistors (poly-Si TFT) on flexible plastic substrates using amorphous silicon (a-Si) precursor films by sputter deposition. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The precursor films were then laser crystallized using XeCl excimer laser irradiation and a four-mask-processed poly-Si TFTs were fabricated with fully self-aligned top gate structure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.333-334
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• 2007

This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on SiOz and AlN substrates, respectively. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_2$ and AlN were not different. However, their electron mobilities were $7.65\;cm^2/V.s$ and $14.8\;cm^2/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_2$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

• Elastomers and Composites
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• 제38권4호
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• pp.295-302
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• 2003

사출성형에서 성형품의 수축현상은 사출온도, 사출압력, 금형온도와 같은 성형공정에 따라 다르게 나타나며 게이트의 크기 등과 같은 금형설계에 따라서도 다르게 나타난다. 또한 수지의 결정화 유무에 따라 다르게 나타나고 있다. 본 연구에서는 여러가지 공정변수와 수지 특성에 따른 성형 수축률을 결정성수지인 poly(butylene terephthalate) (PBT)와 비결정성 수지인 polycarbonate (PC), poly(methyl methacrylate) (PMMA)를 사용하여 연구하였다. 결정성 수지가 비결정성 수지에 비해 약 3배 정도의 큰 수축률을 보였다. 사출 성형품의 성형 수축은 사출온도와 금형온도가 높을수록 그리고 사출압력이 작을수록 수축률은 커지는 경향을 보였다. 게이트의 크기가 커질수록 캐비티내의 압력전달이 원활하여 성형수축률은 작아 졌다. 또한 수지의 흐름방향과 흐름직각방향의 수축률 실험에서는 흐름방향의 수축이 더 작은 경향을 보였다. 게이트와의 거리에 따른 성형수축률은 게이트에서 가까운쪽의 수축이 먼쪽보다 더 큰 수축을 보였는데 이 현상은 잔류응력의 차이로 인하여 나타난 현상으로 해석된다.

• Applied Science and Convergence Technology
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• 제24권6호
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• pp.268-272
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• 2015

We report the systematic study to reduce extrinsic doping in graphene grown by chemical vapor deposition (CVD). To investigate the effect of crystallinity of graphene on the extent of the extrinsic doping, graphene samples with different levels of crystal quality: poly-crystalline and single-crystalline graphene (PCG and SCG), are employed. The graphene suspended in air is almost undoped regardless of its crystallinity, whereas graphene placed on an $SiO_2/Si$ substrate is spontaneously p-doped. The extent of p-doping from the $SiO_2$ substrate in SCG is slightly lower than that in PCG, implying that the defects in graphene play roles in charge transfer. However, after annealing treatment, both PCG and SCG are heavily p-doped due to increased interaction with the underlying substrate. Extrinsic doping dramatically decreases after annealing treatment when PCG and SCG are placed on the top of hexagonal boron nitride (h-BN) substrate, confirming that h-BN is the ideal substrate for reducing extrinsic doping in CVD graphene.

• 폴리머
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• 제28권1호
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• pp.67-76
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• 2004

폴리(트리메틸렌 테레프탈레이트)/폴리(에틸렌 테레프탈레이트) (PTT/PET) 블렌드의 저온 연신 시, 연신 온도와 연신 비에 의한 PTT/PET 100/0, 90/10 및 80/20 블렌드의 열적 특성, 결정화도 및 배향 특성을 살펴보고 이에 따른 수축률과 기계적 특성 변화를 고찰하였다. 연신에 의한 배향과 응력에 의한 결정화 발현에 의해 PTT/PET 블렌드의 상대 결정화도와 유리 전이 온도가 증가되는 반면 냉결정화 온도 및 냉결정화 엔탈피는 감소하였다. PET 유리 전이 온도 이하 연신의 경우 PET의 첨가에 의해 결정화도는 감소되나 배향도 증가에 의하여 인장강도 및 탄성계수가 증가하였다. 수축률은 주사슬 배향에 따라 증가되나 연신에 의한 결정화도 증가에 의하여 최소화될 수 있음을 알 수 있었다.

• 한국재료학회지
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• 제26권12호
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• pp.714-720
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• 2016

We performed this study to understand the effect of a single-crystalline anode on the mechanical properties of as-deposited films during electrochemical deposition. We used a (111) single- crystalline Cu plate as an anode, and Si substrates with Cr/Au conductive seed layers were prepared for the cathode. Electrodeposition was performed with a standard 3-electrode system in copper sulfate electrolyte. Interestingly, the grain boundaries of the as-deposited Cu thin films using single-crystalline Cu anode were not distinct; this is in contrast to the easily recognizable grain boundaries of the Cu thin films that were formed using a poly-crystalline Cu anode. Tensile testing was performed to obtain the mechanical properties of the Cu thin films. Ultimate tensile strength and elongation to failure of the Cu thin films fabricated using the (111) single-crystalline Cu anode were found to have increased by approximately 52 % and 37 %, respectively, compared with those values of the Cu thin films fabricated using apoly-crystalline Cu anode. We applied ultrasonic irradiation during electrodeposition to disturb the uniform stream; we then observed no single-crystalline anode effect. Consequently, it is presumed that the single-crystalline Cu anode can induce a directional/uniform stream of ions in the electrolyte that can create films with smeared grain boundaries, which boundaries strongly affect the mechanical properties of the electrodeposited Cu films.