• 제목/요약/키워드: Poly (Q)

검색결과 102건 처리시간 0.024초

Development of New LTPS Process

  • Yi, Chung;Park, Kyung-Min;Choi, Pil-Mo;Kim, Ung-Sik;Kim, Dong-Byum;Kim, Chi-Woo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.1024-1026
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    • 2004
  • We have developed the five mask $PMOS^1$ and the six mask CMOS process architecture for poly-Si TFT. In order to have a competitive process with that for a-Si TFT, the simple co-planar electrode structure whose data line electrode and pixel electrode are on the same plane was adopted. In addition, RGB + White four color $technology^2$ were applied to achieve high aperture ratio and transmittance. Using the aforementioned process architecture and four color technology, 2.0 inch qCIF transmissive micro-reflectance (TMR) device was successfully fabricated.

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폴링된 폴리머 광도파로를 이용한 cerenkov형 제2고조파 생성 (Cerenkov type second harmonic genration in poled polymer waveguide)

  • 김응수;조원주
    • 전자공학회논문지D
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    • 제35D권8호
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    • pp.62-68
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    • 1998
  • Optical broadband second harmonic genration (SHG) in thin film waveguide structure was investigated. The copolymer poly(MMA-co-DR1MA) which was consiste dof PMMA (polymethylmethacrylate) and DR 1 (disperse red 1) was spin coated on the pyrex substrate. The green and near UV SHG were observe dfrom the fundamental beam even though the poled polymer has the absorption in second harmonic wavelength range. It was able to genrate SHG by cerenkov type phase matching. Th epoled polymer film thickness was decided by theoretical analysis. The green (532nm) and near UV SHG (370nm) were observed from the Q-switched Nd-YAG laser (1064nm) and Ti-sapphire laser (740nm). It was in good agreement with the experimental results.

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Partial Discharge Properties of PET Film with Carbon Black

  • Lee, Young-Hwan;Lee, Jong-Chan;Park, Yong-Sung;Park, Dae-Hee
    • KIEE International Transactions on Electrophysics and Applications
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    • 제4C권1호
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    • pp.1-4
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    • 2004
  • This paper presents an investigation of the phase-resolved partial discharge (PD) pattern of PET (Poly Ethylene Telephthalate) films with carbon black particles. The phase-resolved PD pattern and statistical parameter from PET samples according to the number of included semiconductor particles were measured. The measurement system consisted of a conventional PD detector using a digital signal processing technique. The partial discharge patterns of the PET films that include the semiconductor particles were investigated to simulate an actual situation that may exist in the cable. In addition, difference of PD patterns between semiconducting particles in PET films and artificial voids was studied. The relationship between the numbers of semiconductor particles in PET films was discussed through the difference of Ψ-q-n distribution and statistical analysis.

파라세타몰 검출을 위한 전기화학적 다중효소 바이오센서 (Tri-enzyme modified electrochemical biosensor for paracetamol detection)

  • 박덕수;심윤보;장승철
    • 센서학회지
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    • 제17권1호
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    • pp.29-34
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    • 2008
  • A new disposable amperometric tri-enzyme biosensor for the detection of paracetamol has been developed. The paracetamol sensors developed uses horseradish peroxidase modified screen-printed carbon electrodes (HRP-SPCEs) coupled with immobilized enzymes, tyrosinase and aryl acylamidase, prepared using a poly (vinyl alcohol) bearing styrylpyridinium groups (PVA-SbQ) matrix. Optimization of the experimental parameters has been performed and the paracetamol biosensor showed detection limit for paracetamol is as low as $100{\mu}M$ and the sensitivity of the sensor is $1.46nA{\mu}M^{-1}cm^{-2}$.

Cloning, Expression and Purification of HIV-1 Reverse Transcriptase

  • Goo, Jae-Hwan;Park, Kwan-Yong
    • 한국응용약물학회:학술대회논문집
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    • 한국응용약물학회 1995년도 춘계학술대회
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    • pp.76-76
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    • 1995
  • Virus-encoded HIV-1 reverse transcriptase (RTase) is one of the major targets for the development of drugs for HIV-1 since it is an essential enzyme-for the replication cycle of HIV-1. We cloned the entire reverse trancriptase gene into an inducible expression vector with tac promotor= RTase was stably overexpressed and induced by IPTG and the highly-expressed RTase was purified partially by use of DEAE cellulose and Mono Q column. The partially purified enzyme (663kDa, 51kDa) as exhibited by SDS-PAGE showed the high specific activity (16,570U/mg) when the assay for the RTase activity was carried out using $^3$H-dTTP and poly(rA): oligo(dT)12-18 as the substrate.

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Structure and Tissue Distribution of a Trinucleotide-Repeat-containing Gene (cag-3) Expressed Specifically in the Mouse Brain

  • Ji, Jin Woo;Yang, Hye Lim;Kim, Sun Jung
    • Molecules and Cells
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    • 제20권3호
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    • pp.348-353
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    • 2005
  • Using in silico approaches and RACE we cloned a full length trinucleotide (CAG) repeat-containing cDNA (cag-3). The cDNA is 2478 bp long and the deduced polypeptide consists of 140 amino acids of which 73 are glutamines. The genomic sequence spans approximately 79 kb on mouse chromosome 7 and the gene is composed of four exons. Standard and real-time PCR analyses of several mouse tissues showed that the gene is exclusively expressed in the brain and is not detected in embryonic stages. Within the brain, it is expressed throughout the forebrain region with predominant expression in the hypothalamus and olfactory bulb and very low levels in the mid- and hindbrain.

증착시 도핑된 비정질 Si 게이트를 갖는 MOS 캐패시터와 트랜지스터의 전기적 특성 (Electrical Properties of MOS Capacitors and Transistors with in-situ doped Amorphous Si Gate)

  • 이상돈;이현창;김재성;김봉렬
    • 전자공학회논문지A
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    • 제31A권6호
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    • pp.107-116
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    • 1994
  • In this paper, The electrical properties of MOS capacitors and transistoras with gate of in-situ doped amorphous Si and poly Si doped by POCI$_3$. Under constant current F-N stress, MOS capacitors with in-situ doped amorphous Si gate have shown the best resistance to degradation in reliabilty properties such as increase of leakage current, shift of gate voltage (V$_{g}$). shift of flat band voltage (V$_{fb}$) and charge to breakdown(Q$_{bd}$). Also, MOSFETs with in-situ doped amorphous Si gate have shown to have less degradation in transistor properties such as threshold voltage, transconductance and drain current. These improvements observed in MOS devices with in-situ doped amorphous Si gate is attributed to less local thinning spots at the gate/SiO$_2$ interface, caused by the large grain size and the smoothness of the surface at the gate/SiO$_2$ interface.

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Low Power and Small Area Source Driver Using Low Temperature Poly-Si(LTPS) Thin Film Transistors(TFTs) for Mobile Displays

  • Hong, Sueng-Kyun;Byun, Chun-Won;Yoon, Joong-Sun;Kwon, Oh-Kyong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.833-836
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    • 2007
  • A low power and small area source driver using LTPS TFTs is proposed for mobile applications. This source driver adopts level shifter with holding latch function and new R-to-R type digital-to-analog converter (DAC). The power consumption and layout area of the proposed source driver are reduced by 23% and 25% for 16M colors and qVGA AM-OLED panel, respectively.

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Alizarin Red S modified electrochemical sensors for the detection of aluminum ion

  • Chang, Seung-Cheol
    • 센서학회지
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    • 제19권6호
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    • pp.421-427
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    • 2010
  • Alizarin Red S modified screen printed carbon electrodes were developed for the electrochemical detection of aluminum ion. The electrodes developed use screen-printed carbon electrodes(SPCEs) coupled with chemical modification with an organic chelator, Alizarin Red S(ARS), for aluminum ion detection in aqueous solution. For sensor fabrication ARS was directly immobilized on the surface of SPCEs using PVA-SbQ(The poly(vinyl alcohol) bearing stryrylpyridinium groups). Aluminum concentrations were indirectly estimated by amperometric determination of the non-complexed ARS immobilized on the electrodes, after its complexation with aluminum. The sensitivity of the sensor developed was $3.8\;nA{\mu}M^{-1}cm^{-2}$ and the detection limit for aluminum was $25\;{\mu}M$.

저온 산화공정에 의해 낮은 Dit를 갖는 실리콘 산화막의 제조 (Preparation of the SiO2 Films with Low-Dit by Low Temperature Oxidation Process)

  • 전법주;정일현
    • 공업화학
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    • 제9권7호
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    • pp.990-997
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    • 1998
  • ECR 산소플라즈마를 이용하여 저온 확산법에 의해 서로 다른 종류의 기판에 마이크로파 출력, 기판의 위치 등을 실험변수로 실리콘 산화막을 제조하고, 열처리 전 후 물리 화학적 특성을 분석하여 Si/O 의 조성비, 산화막 표면의 morphology와 전기적 특성과의 관계를 살펴보았다. 마이크로파 출력이 높은 영역에서, 산화속도는 증가하지만 식각으로 인하여 표면조도가 증가하였다. 따라서 막내에 결함이 증가하고 기판자체에 걸리는 DC bias의 증가로 기상에 존재하는 산소 양이온이 다량 함유되어 산화막의 질이 저하되었다. 기판의 종류에 따라 기상에 존재하는 산소 양이온의 함량은 Si(100) $Si/SiO_2$계면에 존재하는 결함들은 줄일 수 있으나, 고정전하와 계면포획전하 밀도는 열처리와 무관하고 단지 기상에 존재하는 반응성 산소이온의 양과 기판자체 DS bias에 의존하였다. 마이크로파 출력이 300, 400 W인 실험조건에서 표면조도가 낮고, 계면결함밀도가 ${\sim}9{\times}10^{10}cm^{-2}eV^{-1}$$Si/SiO_2$계면에서 결함이 적은 양질의 산화막이 얻어졌다.

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