• Tribology and Lubricants
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• v.15 no.1
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• pp.90-97
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• 1999

Chemical-Mechanical Polishing (CMP) refers to a material removal process done by rubbing a work piece against a polishing pad under load in the presence of chemically active, abrasive containing slurry. CU process is a combination of chemical dissolution and mechanical action. The mechanical action of CMP involves tribology. The liquid slurry is trapped between the wafer (work piece) and pad (tooling) forming a lubricating film. For the first step to understand material removal rate of the CMP process, the lubricational analyses were done with commercial 100mm diameter silicon wafers to get nominal clearance of the slurry film, roll and pitch angle at the steady state. For this purpose, we calculate slurry pressure, resultant forces and moments at the steady state in the range of typical industrial polishing conditions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.812-816
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• 2000

It is very important to understand the correlation of between inter dielectric(ILD) CMP process and various facility factors supplied to equipment to equipment system. In this paper, the correlation between the various facility factors supplied to CMP equipment system and ILD-CMP process was studied. To prevent the partial over-polishing(edge hot-spot) generated in the wafer edge area during polishing, we analyze various facilities supplied at supply system. With facility shortage of D.I water(DIW) pressure, we introduced an adding purified $N_2$(P$N_2$)gas in polishing head cleaning station for increasing a cleaning effect. DIW pressure and P$N_2$gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. We estimated two factors (DIW pressure and P$N_2$gas) for the improvement of CMP process. Especially, we obtained a uniform planarity in patterned wafer and prohibited more than 90% wafer edge over-polishing. In this study, we acknowledged that facility factors supplied to equipment system played an important role in ILD-CMP process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.838-843
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• 2002

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for deep sub-micron technology. The reverse moat etch process has been used for the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process with conventional low selectivity slurries. Thus, the process became more complex, and the defects were seriously increased. In this paper, we studied the direct STI-CMP process without reverse moat etch step using high selectivity slurry(HSS). As our experimental results show, it was possible to achieve a global planarization without the complicated reverse moat process, the STI-CMP process could be dramatically simplified, and the defect level was reduced. Therefore the throughput, yield, and stability in the ULSI semiconductor device fabrication could be greatly improved.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1836-1839
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• 2003

This paper describes the surface polishing characteristics of a flat and free surface ferromagnetic substance(SM45C) that magnetic abrasive polishing processed. The effects of the various working factors on the surface roughness are clarified by experiments respectively, such as magnetic flux density. rotation speed of magnetic head. working gap, feed rate of workpiece. diameter of magnetic abrasives. and shape of workpiece. On the basis of these experiments, the polishing mechanism is discussed and the characteristics of the polishing process are described. In addition, it is found experimentally that die ＆ mold surfaces are also polished precisely by this process

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.7 no.2
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• pp.3-7
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• 2008

A polishing machine adopting a new unique structural mechanism has been developed, named as a swing-arm type polishing machine. The mechanism is such that the tool path tracks on a spherical surface, of which the diameter is adjusted by setting up the machine mechanism properly. It has a strong benefit especially for polishing axis-symmetric concave mirror surfaces. The swing-arm type polishing machine with 5-axes has been designed in order to polish a concave mirror surface lip to diameter of 2 meters. The drawings are made using 3D CAD and strain-stress analysis has been done by finite element method. AC servo-motor has been used to move the swing arm and a operating software has been developed using a LapVIEW tool. Result of the test run was satisfactory which convinces the usefulness of the swing-arm type polishing machine.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.05a
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• pp.792-795
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• 2000

The magnetic assisted finishing thought to be one of the potential methods for the automatic polishing process. In this study, magnetic assisted finishing process was experimentally attempted to polish the intrnal surface of the cylindrical tube. The newly developed magnetic tool was used, and its polishing performance exmined. From the experimental results, it is found that i ) the newly developed tool is suitable for intrnal surface finishing of the tube. ii ) the surface roughness of 0.9~1${\mu}{\textrm}{m}$Rmax before polishing is improved to the value of 0.2 ${\mu}{\textrm}{m}$Rmax in the finishing experiment of stainless steel STS3602L tube in 6 minutes finishing time.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.7
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• pp.311-315
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• 2002

Chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD), inter-level dielectric (ILD) layers of multi-layer interconnections. In this paper, we studied the characteristics of polishing pad, which can apply shallow trench isolation (STI)-CMP process for global planarization of multi-level interconnection structure. Also, we investigated the effects of different sets of polishing pad, such as soft and hard pad. As an experimental result, hard pad showed center-fast type, and soft pad showed edge-fast type. Totally, the defect level has shown little difference, however, the counts of scratch was detected less than 2 on JR111 pad. Through the above results, we can select optimum polishing pad, so we can expect the improvements of throughput and device yield.

• Journal of the Korea Safety Management & Science
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• v.6 no.4
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• pp.171-181
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• 2004

A multi axis whetstone polishing system, which uses the flow system of the stone polishing machine head, has been developed. The test results show that the defect by line contact polishing does not occur in both ends of the stone and that it came to trim smoothly. In terms of the surface roughness, the corresponding index was decreased by 3.6 times, improving the polishing effect greatly. It decreased significantly the dust and noise with the wet polishing. The factors of the duty evasion at production site can thus be solved with the work environment improvement against the polishing process of the stone industry and work intensive reduction.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.14 no.6
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• pp.136-141
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• 2015

Laser surface polishing is a polishing method for improving surface roughness using an integrated laser beam. Using a laser for surface polishing can improve the surface condition without physical contact or chemical action. Laser polishing has mainly been used to polish the surface of diamond or optical articles, such as lenses and glasses. Recently, diverse studies on laser polishing for metals have been conducted. The analytic study of laser surface polishing has been conducted with experimental trials for comparison, so that the proper conditions for laser polishing can be recommended. In this study, laser surface polishing was simulated in order to predict the heat-affected zone on the die steel depending on the power of the pulsed laser. The simulated results were verified by comparing them to those of the experimental trials. Through this study, therefore, the application of FEM to the selection of appropriate laser conditions could be possible.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.11 no.1
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• pp.1-6
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• 2012

The polishing of silicon wafers has an important role in semiconductor manufacturing. Generally, getting a flat surface such as a mirror is the purpose of the process. The wafer surface roughness is affected by many variables such as the characteristics of the carrier head unit, operation, speed, the pad and slurry temperature. Optimum process conditions for experimental temperature, pH value, down-force, slurry ratio are investigated, time is used as a fixed factor. This study carried out a series of experiments at varying platen, chuck rpm and oscillation cpm taking particular note of the difference between the rpm and the affect it has on the surface roughness. In this experiment determine the optimum conditions for polishing silicone wafers.