• Journal of the Institute of Electronics Engineers of Korea CI
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• v.48 no.1
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• pp.90-100
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• 2011

We present a parallel bi-conjugate gradient (Bi-CG) matrix solver for large scale Bio-FET simulations based on recent graphics processing units (GPUs) which can realize a large-scale parallel processing with very low cost. The proposed method is focused on solving the Poisson equation in a parallel way, which requires massive computational resources in not only semiconductor simulation, but also other various fields including computational fluid dynamics and heat transfer simulations. As a result, our solver is around 30 times faster than those with traditional methods based on single core CPU systems in solving the Possion equation in a 3D FDM (Finite Difference Method) scheme. The proposed method is implemented and tested based on NVIDIA's CUDA (Compute Unified Device Architecture) environment which enables general purpose parallel processing in GPUs. Unlike other similar GPU-based approaches which apply usually 32-bit single-precision floating point arithmetics, we use 64-bit double-precision operations for better convergence. Applications on the CUDA platform are rather easy to implement but very hard to get optimized performances. In this regard, we also discuss the optimization strategy of the proposed method.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.10 no.6
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• pp.243-249
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• 2010

In this thesis, in order to a equivalent circuit-analytical study for a symmetric double gate type MOSFET, we slove analytically the 2D Poisson's equation in a a silicon body. To solve the threshold voltage in a symmetric double gate type MOSFET from the derived expression for the surface potential which the two-dimensional potential distribution of a symmetric double gate type MOSFET is assumed approximately. This thesis can use short and long channel in a silicon body we introduce a new the threshold voltage model in a symmetric double gate type MOSFET and measure it the distance about the range of channel length up to 0.1 [${\mu}m$].

• 한국전산유체공학회:학술대회논문집
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• 2009.04a
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• pp.368-376
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• 2009

Studies on the effect of the wall-ion, wall-water, water-ion and ion-ion interaction on properties of water and ions in nano-channels have been performed through the use of different kinds of ions or different models of potential energy between wall-ion or wall-water. On this paper, we address the effect of water-wall interaction potential on the properties of confined aqueous solution by using the molecular dynamics (MD) simulations. As the interaction potential energies between water and wall we employed the models of the Weeks-Chandler-Andersen (WCA) and Lennard-Jones (LJ). On the MD simulations, 680 water molecules and 20 ions are included between uniformly charged plates that are separated by 2.6 nm. The water molecules are modeled by using the rigid SPC/E model (simple point charge/Extended) and the ions by the charged Lennard-Jones particle model. We compared the results obtained by using WCA potential with those by LJ potential. We also compared the results (e.g. ion density and electro-static potential distributions) in each of the above cases with those provided by solving the Poisson-Boltzmann equation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.10
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• pp.2267-2272
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• 2012

This study has presented the analysis of subthreshold swings based on scaling theory for double gate MOSFET. To solve the analytical potential distribution of Poisson's equation, we use Gaussian function to charge distribution. The scaling theory has been used to analyze short channel effect such as subthreshold swing degradation. These scaling factors for gate length, oxide thickness and channel thickness has been modified with the general scaling theory to include effects of double gates. We know subthreshold swing degradation is rapidly reduced when scaling factor of gate length is half of general scaling factor, and parameters such as projected range and standard projected deviation have greatly influenced on subthreshold swings.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.33 no.12
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• pp.1455-1463
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• 2009

Theoretical mechanics analysis and finite element simulation were performed to investigate creep deformation behavior at the crack tip of transversely isotropic materials under small scale creep (SCC) conditions. Mechanical behavior of material was assumed as an elastic-$2^{nd}$ creep, which elastic modulus ( E ), Poisson's ratio ( ${\nu}$ ) and creep stress exponent ( n ) were isotropic and creep coefficient was only transversely isotropic. Based on the mechanics analysis for material behavior, a constitutive equation for transversely isotropic creep behavior was formulated and an equivalent creep coefficient was proposed under plain strain conditions. Creep deformation behavior at the crack tip was investigated through the finite element analysis. The results of the finite element analysis showed that creep deformation in transversely isotropic materials is dominant at the rear of the crack-tip. This result was more obvious when a load was applied to principal axis of anisotropy. Based on the results of the mechanics analysis and the finite element simulation, a corrected estimation scheme of the creep zone size was proposed in order to evaluate the creep deformation behavior at the crack tip of transversely isotropic creeping materials.

• Smart Structures and Systems
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• v.8 no.5
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• pp.433-447
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• 2011

The present paper addresses the nonlinear response of a FG square plate with two smart layers as a sensor and actuator under pressure. Geometric nonlinearity was considered in the strain-displacement relation based on the Von-Karman assumption. All the mechanical and electrical properties except Poisson's ratio can vary continuously along the thickness of the plate based on a power function. Electric potential was assumed as a quadratic function along the thickness direction and trigonometric function along the planar coordinate. By evaluating the mechanical and electrical energy, the total energy equation can be minimized with respect to amplitude of displacements and electrical potential. The effect of non homogenous index was investigated on the responses of the system. Obtained results indicate that with increasing the non homogenous index, the displacements and electric potential tend to an asymptotic value. Displacements and electric potential can be presented in terms of planar coordinate system. A linear analysis was employed and then the achieved results are compared with those results that are obtained using the nonlinear analysis. The effect of the geometric nonlinearity is investigated by using the comparison between the linear and nonlinear results. Displacement-load and potential-load curves verified the necessity of a nonlinear analysis rather than a linear analysis. Improvement of the previous results (by the linear analysis) through employing a nonlinear analysis can be presented as novelty of this study.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.2
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• pp.6-11
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• 2000

In this paper, suggesting a new linearly -graded depletion edge approximation, the current-voltage characteristics of an n-type short-channel GaAs MESFET device has been analyzed by solving the two dimensional Poisson's equation in the depletion region. In this model, the expressions for the threshold voltage, the source and the drain ohmic resistance, and the drain current were derived. As a result, typical Early effect of a short channel device was shown and the ohmic voltage drop by source and drain contact resistances could be explained. Furthermore our model could analyze both the short-channel device and the long-channel device in a unified manner.

• 한국전산유체공학회:학술대회논문집
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• 2011.05a
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• pp.407-413
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• 2011

VIC (Vortex-In-Cell) method for viscous incompressible flow is presented to simulate the wake behind a modified NACA16 foil. With uniform rectangular grid, the velocity in field is calculated using streamfunction from vorticity field by solving the Poisson equation in which FFT(Fast Fourier Transform) is combined with 2nd order finite difference scheme. Here, LES(Large Eddy Simulation) with Smagorinsky model is applied for turbulence calculation. Effective viscosity is formulated using magnitude of strain tensor(or vorticity). Then the turbulent diffusion as well as viscous diffusion becomes particle strength exchange(PSE) with averaged eddy viscosity. The well-established panel method is combined to obtain the irrotational velocity and to apply the no-penetration boundary condition on the body panel. And wall diffusion is used for no-slip condition numerical results of turbulent stresses are compared with experimental results (Bourgoyne, 2003). Before comparing process, LES(Large Eddy Simulation) SGS(Subgrid scale) stress is transformed Reynolds averaged stress (Winckelmans, 2001).

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.10a
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• pp.579-582
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• 2008

Three dimensional(3D) Poisson's equation is used to calculate the potential variation in the channel to analyze subthreshold current and short channel effect(SCE). The analytical model has been presented to lessen calculating time and understand the relationship of parameters. The accuracy of this model has been verified by the data from 3D numerical device simulator and variation for dimension and process parameters has been explained. The model has been developed to obtain channel potential of FinFET according to channel doping and to calculate subthreshold current and threshold voltage.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.4
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• pp.917-921
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• 2013

This paper have analyzed the change of breakdown voltage for conduction path of double gate(DG) MOSFET. The low breakdown voltage among the short channel effects of DGMOSFET have become obstacles of device operation. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The change of breakdown voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. Resultly, we know the breakdown voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.