• Transactions on Electrical and Electronic Materials
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• 제9권6호
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• pp.247-250
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• 2008

Hafnium dioxide ($HfO_2$) thin film as a gate dielectric for organic thin film transistors is prepared by plasma enhanced atomic layer deposition (PEALD). Mostly crystalline of $HfO_2$ film can be obtained with oxygen plasma and with water at relatively low temperature of $200^{\circ}C$. $HfO_2$ was deposited as a uniform rate of $1.2\;A^{\circ}$/cycle. The pentacene TFT was prepared by thermal evaporation method with hafnium dioxide as a gate dielectric. The electrical properties of the OTFT were characterized.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.78-78
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• 2013

Recently, many platinoid metals like platinum and ruthenium have been used as an electrode of microelectronic devices because of their low resistivity and high work-function. However the material cost of Ru is very expensive and it usually takes long initial nucleation time on SiO2 during chemical deposition. Therefore many researchers have focused on how to enhance the initial growth rate on SiO2 surface. There are two methods to deposit Ru film with atomic layer deposition (ALD); the one is thermal ALD using dilute oxygen gas as a reactant, and the other is plasma enhanced ALD (PEALD) using NH3 plasma as a reactant. Generally, the film roughness of Ru film deposited by PEALD is smoother than that deposited by thermal ALD. However, the plasma is not favorable in the application of high aspect ratio structure. In this study, we used a bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] as a metal organic precursor for both thermal and plasma enhanced ALDs. In order to reduce initial nucleation time, we use several methods such as Ar plasma pre-treatment for PEALD and usage of sacrificial RuO2 under layer for thermal ALD. In case of PEALD, some of surface hydroxyls were removed from SiO2 substrate during the Ar plasma treatment. And relatively high surface nitrogen concentration after first NH3 plasma exposure step in ALD process was observed with in-situ Auger electron spectroscopy (AES). This means that surface amine filled the hydroxyl removed sites by the NH3 plasma. Surface amine played a role as a reduction site but not a nucleation site. Therefore, the precursor reduction was enhanced but the adhesion property was degraded. In case of thermal ALD, a Ru film was deposited from Ru precursors on the surface of RuO2 and the RuO2 film was reduced from RuO2/SiO2 interface to Ru during the deposition. The reduction process was controlled by oxygen partial pressure in ambient. Under high oxygen partial pressure, RuO2 was deposited on RuO2/SiO2, and under medium oxygen partial pressure, RuO2 was partially reduced and oxygen concentration in RuO2 film was decreased. Under low oxygen partial pressure, finally RuO2 was disappeared and about 3% of oxygen was remained. Usually rough surface was observed with longer initial nucleation time. However, the Ru deposited with reduction of RuO2 exhibits smooth surface and was deposited quickly because the sacrificial RuO2 has no initial nucleation time on SiO2 and played a role as a buffer layer between Ru and SiO2.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.496-498
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• 2005

We reported that high dielectric hafnium oxide nano-film deposited by thermal atomic layer deposition on the poly-silicon film (poly-Si). The poly -Si film was produced by plasma enhanced chemical vapor deposition and excimer laser annealing. We used the hafniu m chloride ($HfCl_4$) and water as the precursors and analyzed the hafnium oxide film by transmission electron microscope and secondary ion mass spectrometer. Hafnium oxide produced by the ALD method showed very good coverage on the rough surface of poly-Si film. While deposited with 200 cycles, these hafnium oxide films revealed a relatively smooth surface and good uniformity, but the cumulative roughness produced by the incomplete reaction was apparent when the amount of deposition cycle increased to 600 cycles.

• 한국분말재료학회지
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• 제20권1호
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• pp.19-23
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• 2013

Ru films were successfully prepared by plasma-enhanced atomic layer deposition (PEALD) using $Ru(EtCp)_2$ and $NH_3$ plasma. To optimize Ru PEALD process, the effect of growth temperature, $NH_3$ plasma power and $NH_3$ plasma time on the growth rate and preferred orientation of the deposited film was systemically investigated. At a growth temperature of $270^{\circ}C$ and $NH_3$ plasma power of 100W, the saturated growth rate of 0.038 nm/cycle was obtained on the flat $SiO_2$/Si substrate when the $Ru(EtCp)_2$ and $NH_3$ plasma time was 7 and 10 sec, respectively. When the growth temperature was decreased, however, an increased $NH_3$ plasma time was required to obtain a saturated growth rate of 0.038 nm/cycle. Also, $NH_3$ plasma power higher than 40 W was required to obtain a saturated growth rate of 0.038 nm/cycle even at a growth temperature of $270^{\circ}C$. However, (002) preferred orientation of Ru film was only observed at higher plasma power than 100W. Moreover, the saturation condition obtained on the flat $SiO_2$/Si substrate resulted in poor step coverage of Ru on the trench pattern with an aspect ratio of 8:1, and longer $NH_3$ plasma time improved the step coverage.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.105-105
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• 2012

We have developed a photoemission-assisted plasma-enhanced chemical vapor deposition (PAPE-CVD) [1,2], in which photoelectrons emitting from the substrate surface irradiated with UV light ($h{\nu}$=7.2 eV) from a Xe excimer lamp are utilized as a trigger for generating DC discharge plasma as depicted in Fig. 1. As a result, photoemission-assisted plasma can appear just above the substrate surface with a limited interval between the substrate and the electrode (~10 mm), enabling us to suppress effectively the unintended deposition of soot on the chamber walls, to increase the deposition rate, and to decrease drastically the electric power consumption. In case of the deposition of DLC gate insulator films for the top-gate graphene channel FET, plasma discharge power is reduced down to as low as 0.01W, giving rise to decrease significantly the plasma-induced damage on the graphene channel [3]. In addition, DLC thickness can be precisely controlled in an atomic scale and dielectric constant is also changed from low ${\kappa}$ for the passivation layer to high ${\kappa}$ for the gate insulator. On the other hand, negative electron affinity (NEA) of a hydrogen-terminated diamond surface is attractive and of practical importance for PAPECVD, because the diamond surface under PAPE-CVD with H2-diluted (about 1%) CH4 gas is exposed to a lot of hydrogen radicals and therefore can perform as a high-efficiency electron emitter due to NEA. In fact, we observed a large change of discharge current between with and without hydrogen termination. It is noted that photoelectrons are emitted from the SiO2 (350 nm)/Si interface with 7.2-eV UV light, making it possible to grow few-layer graphene on the thick SiO2 surface with no transition layer of amorphous carbon by means of PAPE-CVD without any metal catalyst.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.14.2-14.2
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• 2007

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.44.1-44.1
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• 2007

• ETRI Journal
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• 제27권5호
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• pp.545-550
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• 2005

We have carried out the fabrications of a barrier layer on a polyethersulfon (PES) film and organic light emitting diode (OLED) based on a plastic substrate by means of atomic layer deposition (ALD). Simultaneous deposition of 30 nm $AlO_x$ film on both sides of the PES film gave a water vapor transition rate (WVTR) of $0.062 g/m^2/day (@38^{\circ}C,\;100%\;R.H.)$. Further, the double layer of 200 nm $SiN_x$ film deposited by plasma enhanced chemical vapor deposition (PECVD) and 20 nm $AlO_x$ film by ALD resulted in a WVTR value lower than the detection limit of MOCON. We have investigated the OLED encapsulation performance of the double layer using the OLED structure of ITO / MTDATA (20 nm) / NPD (40 nm) / AlQ (60 nm) / LiF (1 nm) / Al (75 nm) on a plastic substrate. The preliminary life time to reach 91% of the initial luminance $(1300 cd/m^2)$ was 260 hours for the OLED encapsulated with 100 nm of PECVD-deposited $SiN_x$ and 30 nm of ALD-deposited $AlO_x$.

• 반도체디스플레이기술학회지
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• 제23권2호
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• pp.87-91
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• 2024

SiO₂, renowned for its excellent insulating properties, has been used in the semiconductor industry as a valuable dielectric material. High-quality SiO₂ films find applications in gate spacers and interlayer insulation gap-fill oxides, among other uses. One of the prevalent methods for depositing these SiO₂ films is plasma enhanced chemical vapor deposition (PECVD) favored for its relatively low processing costs and ability to operate at low temperatures. However, compared to the increasingly utilized atomic layer deposition (ALD) method, PECVD exhibits inferior film characteristics such as uniformity. This study aims to produce SiO₂ films with uniformity as close as possible to those achieved by ALD through the adjustment of PECVD process parameters. we conducted a total of nine PECVD processes, varying the process time and gas flow rates, which were identified as the most influential factors on the PECVD process. Furthermore, ellipsometry analysis was employed to examine the uniformity variations of each process. The experimental results enabled us to elucidate the relationship between uniformity and deposition rate, as well as the impact of gas flow rate and deposition time on the process outcomes. Additionally, thickness measurements obtained through ellipsometer facilitate the identification of optimal process parameters for PECVD.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1122-1125
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• 2006

The TFT performances were enhanced and stabilized by plasma oxidation of the polycrystalline Si surface prior to the plasma enhanced atomic layer deposition of $Al_2O_3$ gate dielectric film. We attribute the improvement to the formation of a high quality oxide interface layer between the gate dielectric film and the poly-Si film. The interface oxide has a predominant effect on the TFT's characteristics, and is regulated by the gap distance between the electrode and the polycrystalline Si surface.