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http://dx.doi.org/10.4313/TEEM.2008.9.6.247

Low Temperature Preparation of Hafnium Oxide Thin Film for OTFT by Atomic Layer Deposition  

Choi, Woon-Seop (School of Display Engineering, Hoseo University)
Publication Information
Transactions on Electrical and Electronic Materials / v.9, no.6, 2008 , pp. 247-250 More about this Journal
Abstract
Hafnium dioxide ($HfO_2$) thin film as a gate dielectric for organic thin film transistors is prepared by plasma enhanced atomic layer deposition (PEALD). Mostly crystalline of $HfO_2$ film can be obtained with oxygen plasma and with water at relatively low temperature of $200^{\circ}C$. $HfO_2$ was deposited as a uniform rate of $1.2\;A^{\circ}$/cycle. The pentacene TFT was prepared by thermal evaporation method with hafnium dioxide as a gate dielectric. The electrical properties of the OTFT were characterized.
Keywords
Hafnium oxide; Thin film; ALD; OTFT;
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