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http://dx.doi.org/10.4150/KPMI.2013.20.1.019

Optimization of PEALD-Ru Process using Ru(EtCp)2  

Kwon, Se-Hun (National Core Research Center for Hybrid Materials Solution, Pusan National University)
Jeong, Young-Keun (National Core Research Center for Hybrid Materials Solution, Pusan National University)
Publication Information
Journal of Powder Materials / v.20, no.1, 2013 , pp. 19-23 More about this Journal
Abstract
Ru films were successfully prepared by plasma-enhanced atomic layer deposition (PEALD) using $Ru(EtCp)_2$ and $NH_3$ plasma. To optimize Ru PEALD process, the effect of growth temperature, $NH_3$ plasma power and $NH_3$ plasma time on the growth rate and preferred orientation of the deposited film was systemically investigated. At a growth temperature of $270^{\circ}C$ and $NH_3$ plasma power of 100W, the saturated growth rate of 0.038 nm/cycle was obtained on the flat $SiO_2$/Si substrate when the $Ru(EtCp)_2$ and $NH_3$ plasma time was 7 and 10 sec, respectively. When the growth temperature was decreased, however, an increased $NH_3$ plasma time was required to obtain a saturated growth rate of 0.038 nm/cycle. Also, $NH_3$ plasma power higher than 40 W was required to obtain a saturated growth rate of 0.038 nm/cycle even at a growth temperature of $270^{\circ}C$. However, (002) preferred orientation of Ru film was only observed at higher plasma power than 100W. Moreover, the saturation condition obtained on the flat $SiO_2$/Si substrate resulted in poor step coverage of Ru on the trench pattern with an aspect ratio of 8:1, and longer $NH_3$ plasma time improved the step coverage.
Keywords
Ru films; Plasma-enhanced atomic layer deposition; $NH_3$ plasma;
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