• Title/Summary/Keyword: Plasma shape

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Nanoparticle Phosphors Synthesized by Inductively Controlled Plasma Process for Plasma Based Display

  • Yang, Choong-Jin;Park, Jong-Il;Choi, Seung-Dueg;Park, Eon-Byeong;Lee, Young-Joo
    • Journal of the Korean Ceramic Society
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    • v.45 no.7
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    • pp.380-386
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    • 2008
  • Optimized volume production of nanoscale phosphor powders synthesized by radio frequency (RF) plasma process was developed for the application to plasma display panels. The nano powders were synthesized by feeding the both solid and liquid type precursors, and nanoparticle phosphors were characterized in terms of particle size, shape, and photoluminescence (PL) intensities. Computer simulation was performed in advance to determine the process parameters, and nano phosphors were evaluated by comparing with current commercial micron-sized phosphor powders. Practical feeding of both solid and liquid type precursor was proved to be effective for volume production.The developed process showed a potential as a production method for red, blue and green phosphor although the PL intensity still needs further improvement.

Antimicrobial Effect of Low Temperature Atmospheric Plasma against Oral Pathogens

  • Kim, Young Min;Choi, Byul Bo Ra;Park, Sang Rye;Kim, Ji Young;Kim, Gyoo Cheon
    • International Journal of Oral Biology
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    • v.40 no.4
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    • pp.167-173
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    • 2015
  • The purpose of this study was to investigate the antibacterial effect of the low temperature atmospheric plasma device with needle tip designed for easy approach to the oral cavity and root canal against Streptococcus mutans, Enterococcus faecalis and Candida albicans. The antibacterial activities evaluated by measuring clear zone of agar plate smeared with each bacteria after plasma treatment. To quantify antibacterial effects, dilution plate method was used. In addition, scanning electron microscope (SEM) was used for observation of changes in bacterial morphology. As treatment time of plasma increased, the clear zone was enlarged. The death rate was more than 99%. The SEM results showed that the globular shape of bacteria was distorted. These results suggest that needle tip plasma could be an innovative device for prevention of dental caries, and treatment of apical infection and soft tissue diseases.

Treatment of Ar/O2 Atmospheric Pressure Plasma for Sterilization (아르곤과 산소 대기압 플라즈마 방전 효과를 이용한 살균처리)

  • Son, Hyang Ho;Lee, Won Gyu
    • Applied Chemistry for Engineering
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    • v.22 no.3
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    • pp.261-265
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    • 2011
  • The sterilization effects of atmospheric pressure plasma with the mixture of argon and oxygen were analyzed. The plasma reactor with the shape of dielectric barrier discharge produced the uniform distribution of glow discharge and generated ozone gas effectively according to the various process parameters. The sterilization for E. coli was affected by power, oxygen ratio in the mixture gas, treatment time and distance between reactor and sample. The concentration of ozone was a major source for the sterilization of E. coli, which was enhanced by the increase of power and oxygen ratio. In this study, the effect of atmospheric pressure plasma treatment for the sterilization was confirmed and its result can deliver the atmospheric pressure plasma treatment as the novel sterilization method instead of conventional methods.

Property of the Spheroidized Zr Powder by Radio Frequency Plasma Treatment (RF 플라즈마 처리법에 기반한 기계적 밀링된 Zr 분말의 구형화에 따른 특성 변화)

  • Lee, Yukyeong;Choi, Mi-Sun;Park, Eon Byeong;Oh, Jeong Seok;Nam, Taehyun;Kim, Jung Gi
    • Journal of Powder Materials
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    • v.28 no.2
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    • pp.97-102
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    • 2021
  • Powder quality, including high flowability and spherical shape, determines the properties of additively manufactured products. Therefore, the cheap production of high-quality powders is critical in additive manufacturing. Radio frequency plasma treatment is an effective method to fabricate spherical powders by melting the surface of irregularly shaped powders; in the present work, mechanically milled Zr powders are spheroidized by radio frequency plasma treatment and their properties are compared with those of commercial Zircaloy-2 alloy powder. Spherical Zr particles are successfully fabricated by plasma treatment, although their flowability and impurity contents are poorer than those of the commercial Zircaloy-2 alloy powder. This result shows that radio-frequency plasma treatment with mechanically milled powders requires further research and development for manufacturing low-cost powders for additive manufacturing.

Plasma Uniformity Control Technology for Dry Etching (ICP Dry etcher) Equipment for Medium and Large Displays (중·대형 디스플레이용 건식 식각(ICP Dry etcher) 설비의 플라스마 균일도 제어 기술)

  • Hong, Sung Jae;Jeon, Honggoo;Yang, Ho Sik
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.3
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    • pp.125-129
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    • 2022
  • The current display technology tends to be highly integrated with high resolution, the element size is gradually downsized, and the structure becomes complicated. Inductively coupled plasma (ICP) dry etcher of various types of etching equipment is a structure that places a large multi-divisional antenna source on the top lid, passes current to the Antenna, and generates plasma using the induced magnetic field generated at this time. However, in the case of a device of a large area size, a support that can withstand a load structurally is necessary, and when these support portions are applied, arrangement of antenna becomes difficult, which causes reduction in uniformity. As described above, the development of antenna source of a large area having a uniform plasma density on the whole surface is difficult to restrict hardware (H/W). As a solution to this problem, we confirmed the change in uniformity of plasma by applying two kinds of specific shape faraday shield(FICP) to the lower part of the large area upper lid antenna of 6 and 8th more than that generation size. In this thesis, we verify the faraday shield effect which can improve plasma uniformity control of ICP dry etcher equipment applied to medium and large displays.

A Study of Atmospheric-pressure Dielectric Barrier Discharge (DBD) Volume Plasma Jet Generation According to the Flow Rate (유량에 따른 대기압 유전체 전위장벽방전(DBD) 플라즈마 젯 발생에 관한 연구)

  • Byeong-Ho Jeong
    • Journal of Industrial Convergence
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    • v.21 no.7
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    • pp.83-92
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    • 2023
  • The bullet shape of the plasma jet using the atmospheric-pressure dielectric barrier discharge method changes depending on the applied fluid rate and the intensity of the electric field. This changes appear as a difference in spectral distribution due to a difference in density of the DBD plasma jet. It is an important factor in utilizing the plasma device that difference between the occurrence of active species and the intensity through the analysis of the spectrum of the generated plasma jet. In this paper, a plasma jet generator of the atmospheric pressure volume DBD method using Ar gas was make a prototype in accordance with the proposed design method. The characteristics jet fluid rate analysis of Ar gas was accomplished through simulation to determine the dependence of flow rate for the generation of plasma jets, and the characteristics of plasma jets using spectrometers were analyzed in the prototype system to generate optimal plasma jet bullet shapes through MFC flow control. Through the design method of the proposed system, the method of establishing the optimal plasma jet characteristics in the device and the results of active species on the EOS were verified.

Remote Plasma Enhanced-Ultrahigh Vacuum Chemical Vappor Deposition (RPE-UHVCD)법을 이용한 GaN의 저온 성장에 관한 연구

  • 김정국;김동준;박성주
    • Proceedings of the Korean Vacuum Society Conference
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    • 1998.02a
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    • pp.108-108
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    • 1998
  • 최근의 GaN에 관한 연구는 주로 MOCVD법과 MBE법이 이용되고 있으며 대부분 800¬1$\alpha$)()t 정도의 고옹에서 이루어지고 었다. 그러나 이러한 고온 성장은 GaN 성장 과청에서 질 소 vacancy를 생성시켜 광특성을 저하시키고 청색 발광충인 InGaN 화합물에 In의 유입울 어 렵게 하며 저온에서보다 탄소 오염이 증가하는 동의 문제캠을 가지고 있다. 이러한 고온 생장 의 문제점을 해결하기 위한 방법중의 한 가지로 제시되고 있는 것이 저온 성장법이다. 본 연구 에 사용된 RPE-UHVCVD법은 Nz률 rf plasma로 $\sigma$acking하여 공급함으로써 NI-h롤 질소원으 로 사용하는 고온 성장의 청우와는 다르게 온도에 크게 의존하지 고 질소원올 공급할 수 있 어 저옹 성장이 가능하였다. 기판으로는 a - Alz03($\alpha$)()1)를 사용하였고 3족원은 TEGa(triethylgallium)이며,5족원으로는 6 6-nine Nz gas를 rf plasma로 cracking하여 활성 질소원올 공급하였다 .. Nz plasma로 질화처리 를 한 sapphire 표면 위에 G따애 핵생성충을 성장 옹도(350 t, 375 t, 400 t)와 성장시간(30 분,50 분) 그리고 VIllI비(1$\alpha$)(), 2뼈)둥을 변화시키면서 성장시킨 후 GaN 에피택시충을 450 $^{\circ}C$에서 120 분 동안 성장시켰다 .. XPS(x-ray photoelectron spectroscopy), XRD(x-ray d diffraction), AFM(atomic force microscope)둥올 이용하여 표면의 조성 및 morphology 변화와 결정성을 관찰하였다. X XPS 분석 결과 질화처리를 한 sapphire 표면에는 AlN가 형성되었다는 것을 확인 할 수 있 었으며 질화처리를 한 후 G따J 핵생성충올 성장시킨 경우에 morphology 변화를 AFM으로 살 펴본 결과 표면에 facet shape의 island가 형성되었고 이러한 결파는 질화처리 과청이 facet s shape의 island 형성을 촉진시킨다는 것을 알 수 있었다. 핵생성충의 성장온도가 중가함에 따 라 island의 모양은 round shape에서 facet shape으로 변화하였다. 이러한 표면의 morphology 변화와 GaN 에피택시충의 결정성과의 관계를 살펴보면 GaN 에피택시충 표면의 rms(root m mean square) roughness가 중가하는 경 우 XRD (j -rocking curve의 FWHM(full width half m maximum) 값이 감소하는 것으로 나타났다. 이러한 현상은 결정성의 향상이 columnar 성장과 관계가 었다는 것올 알 수 있었다 .. columnar 성장은 결함의 밀도가 낮은 column의 형생과 G GaN 에피택시충의 웅력 제거로 인해 G값{의 결정성을 향상시킬 수 있는 것으로 생각된다. 톡 히 고온 성장의 경우와는 달리 rms roughness의 중가가 100-150 A청도로 명탄한 표면올 유 지하면서 결정성을 향상시킬 수 있었다. 본 실험에서는 핵생성충올 375 t에서 30 분 생장시킨 경우에 hexagonal 모양의 island로 columnar 성장을 하였고 GaN 에피태시충의 결정성도 가장 향상되었다 이상의 결과로부터 RPE-UHVCVD법용 이용한 GaN 저온 성장에서도 GaN의 결청성올 향 상시킬 수 있음융 확인할 수 있었다.

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Effect of dielectrics on NOx removal of Metal particle-$Al_2O_3$ hybrid type reactor (금속파티클-$Al_2O_3$ hybrid 반응기의 NOx 제거에 미치는 유전체 영향)

  • Kim, J.S.;Park, J.Y.;Jung, J.G.;Kim, T.Y.;Goh, H.S.;Kim, H.M
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.917-921
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    • 2002
  • In this paper, we made different types of non-thermal plasma reactors such as Metal-particle reactor with $Al_2O_3$ to measure NOx removal characteristic and the dielectric effect for NOx removal. NOx removal rate is not so good when we use just dielectric of $Al_2O_3$ at the Metal-particle reactor, also we just put sludge pellets(100%) without Metal-particle reactor with $Al_2O_3$ and dielectric such as $TiO_2$, $BaTiO_3$ to measure the effect of sludge for NOx removal so that NOx removal rate is almost the same. However NOx removal rate is more than 90% in case of the reactor of composition shape used both dielectric of $Al_2O_3$ and sludge pellets at the same time. In case of the shape of plasma reactor with dielectric, the Metal-particle reactor with $Al_2O_3$, and the metal-particle reactor with both $Al_2O_3$ and dielectric such as $TiO_2$, $BaTiO_3$ at the same time, they are almost the same effect for NOx removal, so we made MNPR(Metal-particle Non-thermal Plasma Reactor with $Al_2O_3$) to reduce these kinds of demerits. Finally, we think MNPR should be much better than other reactors for NOx removal.

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Manufacturing and Properties of Al-Al2O3 Composite Coating Layer Using Warm Spray Process (Warm spray를 이용한 알루미늄-알루미나 복합 코팅층의 제조 및 특성)

  • Kwon, Eui-Pyo;Lee, Jong-Kweon
    • Korean Journal of Materials Research
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    • v.27 no.7
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    • pp.374-380
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    • 2017
  • Properties of coatings produced by warm spray were investigated in order to utilize this technique as a repair method for Al tire molds. $Al-(0-10%)Al_2O_3$ composite powder was sprayed on Al substrate by warm spraying, and the microstructure and mechanical properties of the composite coating layer were investigated. For comparative study, the properties of the coating produced by plasma spray, which is a relatively high-temperature spraying process, were also investigated. The composite coating layers produced by the two spray techniques exhibited significantly different morphology, perhaps due to their different process temperatures and velocities of particles. Whereas the $Al_2O_3$ particles in the warm sprayed coating layer maintained their initial shape before the spray, flattened and irregular shape $Al_2O_3$ particles were distributed in the plasma sprayed coating layer. The coating layer produced by warm spray showed significantly higher adhesive strength compared to that produced by plasma spray. Hardness was also higher in the warm sprayed coating layer compared to the plasma sprayed one. Moreover, with increasing the fraction of $Al_2O_3$, hardness gradually increased in both spray coating processes. In conclusion, an $Al-Al_2O_3$ composite coating layer with good mechanical properties was successfully produced by warm spray.

Atmospheric Pressure Plasma Etching Technology for Forming Circular Holes in Perovskite Semiconductor Materials (페로브스카이트 반도체 물질에 원형 패턴을 형성하기 위한 상압플라즈마 식각 기술)

  • Kim, Moojin
    • Journal of Convergence for Information Technology
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    • v.11 no.2
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    • pp.10-15
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    • 2021
  • In this paper, we formed perovskite (CH3NH3PbI3) thin films on glass with wet coating methods, and used various analytical techniques to discuss film thickness, surface roughness, crystallinity, composition, and optical property. The coated semiconductor material has no defects and is uniform, the surface roughness value is very small, and a high absorption rate has been observed in the visible light area. Next, in order to implement the hole shape in the organic-inorganic layer, Samples in the order of a metal mask with holes at regular intervals, a glass coated with a perovskite material, and a magnet were etched with atmospheric pressure plasma equipment. The shape of the hole formed in the perovskite material was analyzed by changing the time. It can be seen that more etching is performed as the time increases. The sample with the longest processing time was examined in more detail, and it was classified into 7 regions by the difference according to the location of the plasma.