• Journal of Surface Science and Engineering
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• v.34 no.5
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• pp.475-480
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• 2001

Diffusion of Cu into the low-k para-xylene based plasma polymer (pXPP) thin films deposited by plasma-enhanced chemical vapor deposition using the para-xylene precursor was comparatively measured using various methods. Cu layer was deposited on the surfaces of pXPPs treated by $N_2$ plasma generated in a magnetically enhanced inductively coupled plasma reactor. Diffusion characteristics of Cu into pXPPs were measured using Rutherford backscattering spectroscopy (RBS), secondary ion mass spectroscopy (SIMS), cross-sectional transmission electron microscopy (XTEM), and current-voltage (I-V) measurements for the vacuum-annealed Cu/pXPPs for 1 hour at $450^{\circ}C$ and were compared. The results showed a correlation between the I-V measurement and SIMS data are correlated and have a sensitivity enough to evaluate the dielectric properties but the RBS or XTEM measurements are not sufficient to conclude the electrical properties of low-k dielectrics with Cu in the film bulk. The additional results indicate that the pXPP layers are quite resistant to Cu diffusion at the annealing temperature of $450^{\circ}C$ compared to the other previously reported organic low-k materials.

• Annals of Laboratory Medicine
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• v.38 no.6
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• pp.518-523
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• 2018

Background: Lipemia, a significant source of analytical errors in clinical laboratory settings, should be removed prior to measuring biochemical parameters. We investigated whether lipemia in serum/plasma samples can be removed using a method that is easier and more practicable than ultracentrifugation, the current reference method. Methods: Seven hospital laboratories in Spain participated in this study. We first compared the effectiveness of ultracentrifugation ($108,200{\times}g$) and high-speed centrifugation ($10,000{\times}g$ for 15 minutes) in removing lipemia. Second, we compared high-speed centrifugation with two liquid-liquid extraction methods-LipoClear (StatSpin, Norwood, USA), and 1,1,2-trichlorotrifluoroethane (Merck, Darmstadt, Germany). We assessed 14 biochemical parameters: serum/plasma concentrations of sodium ion, potassium ion, chloride ion, glucose, total protein, albumin, creatinine, urea, alkaline phosphatase, gamma-glutamyl transferase, alanine aminotransferase, aspartate-aminotransferase, calcium, and bilirubin. We analyzed whether the differences between lipemia removal methods exceeded the limit for clinically significant interference (LCSI). Results: When ultracentrifugation and high-speed centrifugation were compared, no parameter had a difference that exceeded the LCSI. When high-speed centrifugation was compared with the two liquid-liquid extraction methods, we found differences exceeding the LCSI in protein, calcium, and aspartate aminotransferase in the comparison with 1,1,2-trichlorotrifluoroethane, and in protein, albumin, and calcium in the comparison with LipoClear. Differences in other parameters did not exceed the LCSI. Conclusions: High-speed centrifugation ($10,000{\times}g$ for 15 minutes) can be used instead of ultracentrifugation to remove lipemia in serum/plasma samples. LipoClear and 1,1,2-trichlorotrifluoroethane are unsuitable as they interfere with the measurement of certain parameters.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.204-206
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• 2003

Electron beam generator of cold cathode type has been developed for industrial application, for example, waste water cleaning, flue gas cleaning, and pasteurization etc. The operational principle is based on the emission of secondary electrons from cold cathode when ions in the plasma hit the cathode, which are accelerated toward exit window by the gradient of an electric potential. The characteristics of secondary electron emission are studied by comparing total cathode current with ion current.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.3
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• pp.133-136
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• 2004

Low-Pressure inductively coupled RF discharge sources have important industrial applications mainly because they can provide a high-density electrodeless plasma source with low ion energy and low power loss. In an inductive discharge, the RF power is coupled to the plasma by an electromagnetic interaction with the current flowing in a coil. In this paper, the experiments have been focussed on the electric characteristic and carried out using a single Langmuir probe. The internal electric characteristics of inductively coupled Ar RF discharge at 13.56(MHz) have been measured over a wide range of power at gas pressure ranging from 1∼70(mTorr).

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.400-403
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• 2008

We have investigated the electro-optical characteristics of AC-PDP with different MgO protective layers, which have been deposited by electron beam evaporation from various sintered pellets with different temperatures. We have measured the secondary electron emission coefficient ($\gamma$) by using the Gamma Focused Ion Beam ($\gamma$-FIB) system, the static margin, and the address delay time. Also, we have investigated photoluminescence (PL) characteristics for understanding the energy levels of MgO pellets and protective layers.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2092-2094
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• 2000

As a next generation lithography (NGL) technology for VLSI semiconductor fabrication, electron beam, ion beam, X-ray and extreme ultraviolet(EUV) are considered as possible candidates. Among these methods, EUV lithography(EUVL) is thought to be the most probable because it is easily realized by improving current optical lithography technology. In order to set EUV radiation which can be applied to EUVL, it is essential to generate very high density and high temperature plasma stably. The method using a pulse power laser and a high voltage pulse discharge is commonly used to accomplish such a high density and high temperature plasma. In this paper we review the recent trends of the EUV generation technique by high density and high temperature plasma.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.5
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• pp.106-112
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• 1994

We have developed a large area ion shower doping system with an RF plasma ion source. The ion current density (i.e., doping concentration) increases with RF power and acceleration voltage. Using this technique, we investigated the optimum condition for ion doping of phosphorus in a-Si:H and poly-Si films. The optimum acceleration voltage and doping time are 6KV and 90sec, respectively, in a-Si:H films. Under this condition the electrical conductivity of ion-doped a-Si:H film is obtained ~10$^{-3}$/cm at room temperature. The sheet resistance decreases witnh acceleration voltage in ion-doped poly-Si, and a heavily-doped layer with a sheet resistance of 920$\Omega$/ㅁ is obtained by using ion doping and subsequent activation.

• Journal of Surface Science and Engineering
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• v.41 no.4
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• pp.134-141
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• 2008

We have developed a numerical model for a remote ICP(inductively coupled plasma) system in 2D and 3D with gas distribution configurations and confirmed it by plasma diagnostics. The ICP source has a Cu tube antenna wound along a quartz tube driven by a variable frequency rf power source($1.9{\sim}3.2$ MHz) for fast tuning without resort to motor driven variable capacitors. We investigated what conditions should be met to make the plasma remotely localized within the quartz tube region without charged particles' diffusing down to a substrate which is 300 mm below the source, using the numerical model. OES(optical emission spectroscopy), Langmuir probe measurements, and thermocouple measurement were used to verify it. To maintain ion current density at the substrate less than 0.1 $mA/cm^2$, two requirements were found to be necessary; higher gas pressure than 100 mTorr and smaller rf power than 1 kW for Ar.

• Journal of Information Display
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• v.2 no.4
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• pp.1-7
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• 2001

This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used $SF_6$ and $O_2$ gases in the HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}cm^{-3}$ at a discharge current of 20 rna, Silicon etch rate of 1.3 ${\mu}m$/min was achieved with $SF_6/O_2$ plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 seem, and RF power of200W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ${\mu}m$ without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.

• Nuclear Engineering and Technology
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• v.54 no.10
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• pp.3717-3723
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• 2022

For the first time, two-dimensional temporal behavior of the edge localized mode (ELM) filament is measured in the edge tokamak plasma with a multi-channel electrical probe array (MCEP). MCEP, which has 16 floating probes (4 × 4), is mounted at the far scrape-off layer (SOL) region in the KSTAR. An electron temperature and an ion flux are measured by sideband method (SBM), which can achieve two-dimensional measurements with high time resolution. Furthermore, temporal evolutions of the electron temperature and the ion flux are obtained during the ELM occurrence. In the H-mode period, short spikes from ELM bursts are observed in measured plasma parameters, and the trend is similar to that of typical Hα signal. Interestingly, when blob-like ELM filaments crash the probe, the heat flux is significantly higher in a local region of the probe array. The results show that our probe array using the SBM can measure the ELM behavior and the plasma parameters without the effect of the stray current caused by the huge device. This study can provide valuable data needed to understand the interaction between the SOL plasma and the plasma facing components (PFCs).