Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2000.07c
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- Pages.2092-2094
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- 2000
EUV Generation by High Density Plasma
고밀도 플라즈마에 의한 EUV 발생기술
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Jin, Y.S.
(Korea Electrotechnology Research Institute) ;
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Lee, H.S.
(Korea Electrotechnology Research Institute) ;
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Kim, K.H.
(Korea Electrotechnology Research Institute) ;
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Seo, K.S.
(Korea Electrotechnology Research Institute) ;
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Rhim, K.H.
(Korea Electrotechnology Research Institute)
- Published : 2000.07.17
Abstract
As a next generation lithography (NGL) technology for VLSI semiconductor fabrication, electron beam, ion beam, X-ray and extreme ultraviolet(EUV) are considered as possible candidates. Among these methods, EUV lithography(EUVL) is thought to be the most probable because it is easily realized by improving current optical lithography technology. In order to set EUV radiation which can be applied to EUVL, it is essential to generate very high density and high temperature plasma stably. The method using a pulse power laser and a high voltage pulse discharge is commonly used to accomplish such a high density and high temperature plasma. In this paper we review the recent trends of the EUV generation technique by high density and high temperature plasma.
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