• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1211-1214
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• 2005

One of the important problems in recent AC-PDP technology is high efficiency. In this research, we have been investigated electro-optical characteristics of MgO protective layer after radio frequency(RF) plasma treatment using Ar, $O_2$, and $H_2$ gases. The breakdown voltage order was $O_2$ > Ar > Nontreatment > $H_2$. Also, brightness order was $O_2$ > Ar > Non-treatment > $H_2$. In this experiment, the best result was obtained after $O_2-plasma$ treatment.

• Korean Chemical Engineering Research
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• 제40권6호
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• pp.719-724
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• 2002

Celgard 및 Durapore 막을 플라즈마로 처리하여 막의 소수성 및 아민용액에 대한 저항성을 조사하였다. 플라즈마 기체(또는 증기)로는 $CF_4$, Hexafluorobenzene(HFP), Pentafluoropyridine(PFP) 그리고 Hexamethyldisiloxane(HMDS)를 사용하였다. 플라즈마로 처리시킨 막의 표면구조는 FT-IR 스펙트럼을 이용하여 분석하였다. 플라즈마로 처리시킨 막의 물에 대한 접촉각은 플라즈마 기체의 종류에 따라 다른 특성을 나타내었다. Celgard와 Durapore 모두 HFB이나 PFP의 플라즈마로 처리하였을 경우에는 접촉각이 감소하였으나, $CF_4$ 또는 HMDS의 플라즈마로 처리하였을 경우에는 플라즈마로 처리하지 않은 경우보다 접촉각이 증가하였다. Monoethanolamine(MEA)용액에 대한 저항성은 Celgard의 경우에는 플라즈마로 처리하였을 경우가 순수한 Celgard보다 낮았으나, Durapore는 $CF_4$ 플라즈마로 처리하였을 경우 MEA에 대한 저항성이 증대되었다.

• 전기학회논문지
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• 제63권10호
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• pp.1485-1490
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• 2014

$SF_6$ gas has been used for power transformers or gas insulated switchgears, because it has the superior insulation property and the stable structure chemically. It has been, however, one of global warming gases and required to reduce the its amount. Some papers have reported that its amount could be reduced by mixing with other gases, such as $N_2$, $CF_4$, $CO_2$ and $C_4F_8$ and their mixture gases would cause the synergy effect. In this paper, we investigated the characteristics of DC plasmas on $SF_6$ mixture gases with $N_2$ at atmospheric pressure. $N_2$ gas is one of cheap gases and has been reported to show the synergy effect with mixing $SF_6$ gas, even though $N_2$ plasmas have electron-positive characteristics. 38 kinds of $SF_6/N_2$ plasma particles, which consisted of an electron, two positive ions, five negative ions, 30 excitation and vibration particles, were considered in a one dimensional fluid simulation model with capacitively coupled plasma chamber. The results showed that the joule heating of $SF_6/N_2$ plasmas was mainly caused by positive ions, on the other hand electrons acted on holding the $SF_6/N_2$ plasmas stably. The joule heating was strongly generated near the electrodes, which caused the increase of neutral gas temperature within the chamber. The more $N_2$ mixed-ratio increased, the less joule heating was. And the power consumptions by electron and positive ions increased with the increase of $N_2$ mixed-ratio.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.201-202
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• 2003

We developed a novel growth method of aligned carbon nanotubes. Aligned carbon nanotubes are grown on a metal catalyst on a glass substrate using biased Helicon plasma chemical vapor deposition (HPECVD) of $CH_4/H_2$ gases from 400 C to 500 C. The Helicon plasma source is one of the high-density plasma sources and is promising for low temperature carbon deposition. A Ni film was used as a catalyst to reduce the activation energy of the nanotubes' growth. The carbon nanotubes were deposited on the nickel catalysis layer selectively.

• 대한안전경영과학회지
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• 제16권2호
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• pp.237-246
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• 2014

Researches on the elimination of sulfur and nitrogen oxides with catalysts and absorbents reported many problems related with elimination efficiency and complex devices. In this study, decomposition efficiency of harmful gases was investigated. It was found that the efficiency rate can be increased by moving the harmful gases together with SPCP reactor and the catalysis reactor. Calcium hydroxide($Ca(OH)_2$), CaO, and $TiO_2$ were used as catalysts. Harmful air polluting gases such as $SO_2$ were measured for the analysis of decomposition efficiency, power consumption, and voltage according to changes to the process variables including frequency, concentration, electrode material, thickness of electrode, number of electrode winding, and additives to obtain optimal process conditions and the highest decomposition efficiency. The standard sample was sulfur oxide($SO_2$). Harmful gases were eliminated by moving them through the plasma generated in the SPCP reactor and the $Ca(OH)_2$ catalysis reactor. The elimination rate and products were analyzed with the gas analyzer (Ecom-AC,Germany), FT-IR(Nicolet, Magna-IR560), and GC-(Shimazu). The results of the experiment conducted to decompose and eliminate the harmful gas $SO_2$ with the $Ca(OH)_2$ catalysis reactor and SPCP reactor show 96% decomposition efficiency at the frequency of 10 kHz. The conductivity of the standard gas increased at the frequencies higher than 20 kHz. There was a partial flow of current along the surface. As a result, the decomposition efficiency decreased. The decomposition efficiency of harmful gas $SO_2$ by the $Ca(OH)_2$ catalysis reactor and SPCP reactor was 96.0% under 300 ppm concentration, 10 kHz frequency, and decomposition power of 20 W. It was 4% higher than the application of the SPCP reactor alone. The highest decomposition efficiency, 98.0% was achieved at the concentration of 100 ppm.

• 한국정밀공학회지
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• 제19권8호
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• pp.34-37
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• 2002

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.77-77
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• 2012

As interest has increased in the interaction between low-temperature plasmas and materials, the role of modeling and simulation of processing in plasma has become important in understanding the effects of charged particles and radicals in plasma applications. Thus in this presentation, we present the theoretical and experimental studies of electron impact cross section for plasma processing gas, such as plasma etching and deposition processes. Also, here the work conducted at the Data Center for Plasma Properties (DCPP) over last 7 years on the systematic synthesis and assessment of fundamental knowledge on low-energy electron interactions with plasma processing gases is briefly summarized and discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.912-916
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• 2002

In this paper, the $CF_4$ decomposition rate and by-product were investigated for a simulated two plasma reactors which are metal particle reactor and spiral wire reactor as function of mixed gases. The $CF_4$ decomposition rate by plasma reactor with metal particle electrode had a gain of 20~25[%] over that by plasma reactor with spiral wire electrode. The $CF_4$ decomposition efficiency increases with increasing applied voltage up to the critical voltage for spark formation. The $CF_4$ decomposition efficiency of metal particle reactor was about 80[%] at AC 24[kV]. The $CF_4$ decomposition rate used $Ar-N_2$ as base gas was the highest among three base gases of $N_2$, $Ar-N_2$, air. The by-products of the $N_2$, $Ar-N_2$ base as were similar, but in case of air base they were different.

• Journal of Microbiology and Biotechnology
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• 제32권6호
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• pp.768-775
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• 2022

In this study we aimed to derive the response surface models for Escherichia coli reduction in wheat flour using atmospheric cold plasma (ACP) with three types of gas. The jet-type atmospheric cold plasma wand system was used with a 30 W power supply, and three gases (argon, air, and nitrogen) were applied as the treatment gas. The operating parameters for process optimization considered were wheat flour mass (g), treatment time (min), and gas flow rate (L/min). The wheat flour samples were artificially contaminated with E. coli at a concentration of 9.25 ± 0.74 log CFU/g. ACP treatments with argon, air, and nitrogen resulted in 2.66, 4.21, and 5.55 log CFU/g reduction of E. coli, respectively, in wheat flour under optimized conditions. The optimized conditions to reduce E. coli were 0.5 g of the flour mass, 15 min of treatment time, and 0.20 L/min of nitrogen gas flow rate, and the predicted highest reduction level from modeling was 5.63 log CFU/g.

• 한국진공학회지
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• 제7권s1호
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• pp.106-117
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• 1998

Fluorocarbonated-SiO2 films were deposited on p-type Si(100) substrate using FSi$(OC_2H_5)_3$ (FTES), and $O_2$ mixture gases by a helicon plasms source. High density $O_2$/FTES/Ar plasma of ~$10^{12} \textrm{cm}^{-3}$ is obtained at low pressure (<3mTorr) with RF power above 900 W in the helicon plasma source. Optical emission spectroscopy (OES) is used to study the relation between the relative densities of the radicals and the film properties. The FTES and $O_2$ gases are greatly dissociated at the helicon mode that is launched at the above threshold plasma density. FTIR and XPS spectra shows that the film has Si-F, and C-F bonds during the formation process of the film which may lower the dielectric constant greatly. The relative dielectric constant, leakage current density, and dielectric breakdown voltage are about 2.8, $8\times10^{-9}\textrm{A/cm}^2$, and > 12 MV/cm, respectively.