• Journal of the Korean institute of surface engineering
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• v.41 no.5
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• pp.189-193
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• 2008

In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to $SiO_2$ and $HfO_2$) of TiN thin films in the $CH_4$/Ar inductively coupled plasma. The maximum etch rate of $274\;{\AA}/min$ for TiN thin films was obtained at $CH_4$(80%)/Ar(20%) gas mixing ratio. At the same time, the etch rate was measured as function of the etching parameters such as RF power, Bias power, and process pressure. The X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as showed an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the $CH_4$ containing plasmas.

• Transactions on Electrical and Electronic Materials
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• v.14 no.4
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• pp.216-220
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• 2013

The etching characteristics of indium zinc oxide (IZO) in $Cl_2/Ar$ plasma were investigated, including the etch rate and selectivity of IZO. The IZO etch rate showed non-monotonic behavior with increasing $Cl_2$ fraction in the $Cl_2/Ar$ plasma, and with increasing source power, bias power, and process pressure. In the $Cl_2/Ar$ (75:25%) gas mixture, a maximum IZO etch rate of 87.6 nm/min and etch selectivity of 1.09 for IZO to $SiO_2$ were obtained. Owing to the relatively low volatility of the by-products formation, ion bombardment was required, in addition to physical sputtering, to obtain high IZO etch rates. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. These data suggested that the IZO etch mechanism was ion-enhanced chemical etching.

• Journal of the Korean Ceramic Society
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• v.39 no.6
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• pp.570-575
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• 2002

The present tendency of electrical and electronics is concentrated on MEMS devices for advantage of miniaturization, intergration, low electric power and low cost. Therefore it is essential that high aspect ratio and high etch rate by HDP technology development, so that silicon deep trench etching reactions was studied by ICP equipment. Deep trench etching of silicon was investigated as function of platen power, etch step time of etch/passivation cycle time and SF$\_$6/:C$_4$F$\_$8/ flow rate. Their effects on etch profile, scallops, etch rate, uniformity and selectivity were also studied.

• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.67-70
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• 2013

In this study, we changed the input parameters (gas mixing ratio, RF power, DC bias voltage, and process pressure), and then monitored the effect on TiN etch rate and selectivity with $SiO_2$. When the RF power, DC-bias voltage, and process pressure were fixed at 700 W, - 150 V, and 15 mTorr, the etch rate of TiN increased with increasing $CF_4$ content from 0 to 20 % in $CF_4$/Ar plasma. The TiN etch rate reached maximum at 20% $CF_4$ addition. As RF power, DC bias voltage, and process pressure increased, all ranges of etch rates for TiN thin films showed increasing trends. The analysis of x-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of TiN and etch species. Based on experimental data, ion-assisted chemical etching was proposed as the main etch mechanism for TiN thin films in $CF_4$/Ar plasma.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.4
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• pp.145-149
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• 2016

The effect of process parameters such as plasma composition, ICP (Inductively Coupled Plasma) source power and rf chuck power on the etch characteristics of GaN epitaxy layer was studied. $Cl_2/Ar$ ICP discharges showed higher etch rates than $SF_6/Ar$ discharges because of the higher volatility of $GaCl_x$ etch products than $GaF_x$ compounds. As the Ar ratio increases in the $Cl_2/Ar$ ICP discharges, the etch anisotropy was enhanced due to the improved physical component of the etching. For both plasma chemistries, the GaN etch rate increased continuously as both the ICP source power and rf chuck power increased, and a maximum etch rate of 251.9 nm/min was obtained at $13Cl_2/2Ar$, 750W ICP power, 400W rf chuck power and 10 mTorr condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.58-61
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• 2002

SBT thin films were etched at different content of Cl$_2$in Cl$_2$/Ar plasma. We obtained the maximum etch rate of 883 ${\AA}$/min at Cl$_2$(20%)/Ar(80%). As Cl$_2$ gas increased in Cl$_2$/Ar plasma, the etch rate decreased. The maximum etch rate may be explained by variation of volume density for Cl atoms and by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction with formation of low-volatile products, which can be desorbed only by ion bombardment. The variation of volume density for Cl, F and Ar atoms and ion current density were measured by the optical emission spectroscopy and Langmuir probe. To evaluate the physical damage due to plasma, X-ray diffraction and atomic force microscopy analysis carried out. After etching process, P-E hysteresis loops were measured by ferroelectric workstation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.996-1002
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• 2000

Ferroelectric (Ba, Sr) TiO$_3$(BST) thin films have attracted much attention for use in new capacitor materials of dynamic random access memories (DRAMs). In order to apply BST to the DRAMs, the etching process for BST thin film with high etch rate and vertical profile must be developed. However, the former studies have the problem of low etch rate. In this study, in order to increase the etch rate, BST thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP) that have much higher plasma density than RIE (reactive ion etching) and ICP (inductively coupled plasma). Experiment was done by varying the etching parameters such as CF$_4$/(CF$_4$+Ar) gas mixing ratio, rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 170nm/min under CF$_4$/CF$_4$+Ar) of 0.1, 600 W/-350 V and 5 mTorr. The selectivities of BST to Pt and PR were 0.6 and 0.7, respectively. Chemical reaction and residue of the etched surface were investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS).

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.287-292
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• 1997

This study was tried to form the silica waveguide using high density plasma. Plasma characteristics have been investigated as a function of etch parameters using a single Langmuir probe and optical emission spectroscopy(OES). As etch parameters, $CF_4/CHF_3$ ratio, bias power, and source power were chosen as main variables. The oxide etch characteristics of inductively coupled plasma(ICP) dry etcher such as the etch rate, etch profile, and surface roughness were investigated s a function of etch parameters. On the basis of these results, the core pattern of the wave guide composed of $SiO_2-P_2O_5$ was formed. It was confirmed that the etch rate of $SiO_2-P_2O_5$ core layer was 380 nm/min and the aluminum selectivity to oxide, that is, mask layer was approximately 30:1. The SEM images showed vertical etched profiles and minimal loss of pattern width.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.227-232
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• 2002

The silylated photoresist etch process was tested by enhanced-ICP. The comparison of the two process results of micro pattern etching with $0.35\mu\textrm{m}$ CD by E-ICP and ICP reveals that I-ICP has bettor quality than ICP. The etch rate and the RIE lag effect was improved in E-ICP. Especially, the problem of the lateral etch was improved in E-ICP.

• Journal of Information Display
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• v.2 no.4
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• pp.1-7
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• 2001

This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used $SF_6$ and $O_2$ gases in the HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}cm^{-3}$ at a discharge current of 20 rna, Silicon etch rate of 1.3 ${\mu}m$/min was achieved with $SF_6/O_2$ plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 seem, and RF power of200W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ${\mu}m$ without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.