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http://dx.doi.org/10.4313/JKEM.2002.15.3.227

The Development of Silylated Photoresist Etch Process by Enhanced- Inductively Coupled Plasma  

조수범 (인하대학교 전자재료공학과)
김진우 (인하대학교 전자재료공학과)
정재성 (인하대학교 전자재료공학과)
오범환 (인하대학교 전자재료공학과)
박세근 (인하대학교 전자재료공학과)
이종근 ((주) A.S.E.)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.15, no.3, 2002 , pp. 227-232 More about this Journal
Abstract
The silylated photoresist etch process was tested by enhanced-ICP. The comparison of the two process results of micro pattern etching with $0.35\mu\textrm{m}$ CD by E-ICP and ICP reveals that I-ICP has bettor quality than ICP. The etch rate and the RIE lag effect was improved in E-ICP. Especially, the problem of the lateral etch was improved in E-ICP.
Keywords
Silyated photoresist; E-ICP; ICP; Etch rate; Etch profile;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
1 자화플라즈마의 분산 특성과 유효광학계수 변화 /
[ 라상호;박세근;오범환 ] / 한국진공학회논문집   과학기술학회마을
2 자화 플라즈마의 주기적 특성 변화와 E-ICP /
[ 라상호;박세근;오범환 ] / 한국전기 전자재료학회 2000하계학술대회 논문집
3 Improvement of ICP plasma with periodic control of axial magnetic field /
[ Beom-hoan O;Jae-seong Jong;Se-Geun Park ] / Surface and coating technology   DOI   ScienceOn
4 Silylated resist의 MERIE 건식식각 특성에 관한 연구 /
[ 김준모 ] / 인하대학교 석사학위논문
5 Dry development of sub-0.25㎛ feature pattern with 193nm silylated resist /
[ S. C. Palmateer;A. R. Forte;R. R. Kunz;M. W. Horm ] / J. Vac. Sci. Technol. A   DOI   ScienceOn
6 산화막 식각에 적용된 E-ICP 효과와 형상단면비교 /
[ 조수범;송호영;박세근;오범환 ] / 한국전기전자재료학회 2000하계학술대회 논문집
7 Low temperature etching of silylated resist in an oxygen plasma generated by an electron cyclotron resonance source /
[ K. T. Sung;W. H. Juan;S. W. Pang ] / J. Electrochem. Soc.   DOI   ScienceOn
8 유도결합형 플라즈마원을 이용한 고선택비 산화막 식각에 관한 연구 /
[ 이수부;박헌건;이석현 ] / 전기전자재료학회논문지
9 Microscopic uniformity in plasma etchin /
[ Richard A Gottscho;C. W. Jurgensen;D. J. Vitkavage ] / J. Vac. Sci. Technol. B   DOI   ScienceOn
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[ Maaike Op de Beeck;Mieke Goethals;Luc Van den hove ] / J. Electrochem. Soc   DOI