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http://dx.doi.org/10.4191/KCERS.2002.39.6.570

Characterization of Deep Dry Etching of Silicon Single Crystal by HDP  

박우정 (성균관대학교 신소재공학과)
김장현 (성균관대학교 신소재공학과)
김용탁 (성균관대학교 신소재공학과)
백형기 (성균관대학교 신소재공학과)
서수정 (성균관대학교 신소재공학과)
윤대호 (성균관대학교 신소재공학과)
Publication Information
Journal of the Korean Ceramic Society / v.39, no.6, 2002 , pp. 570-575 More about this Journal
Abstract
The present tendency of electrical and electronics is concentrated on MEMS devices for advantage of miniaturization, intergration, low electric power and low cost. Therefore it is essential that high aspect ratio and high etch rate by HDP technology development, so that silicon deep trench etching reactions was studied by ICP equipment. Deep trench etching of silicon was investigated as function of platen power, etch step time of etch/passivation cycle time and SF$\_$6/:C$_4$F$\_$8/ flow rate. Their effects on etch profile, scallops, etch rate, uniformity and selectivity were also studied.
Keywords
Inductively Coupled Plasma(ICP); Deep trench; Silicon dry etching;
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