• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2003년도 ICCAS
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• pp.1565-1570
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• 2003

Passive Haptic Devices have more benefit than the active in Stability. But Apart from benefits, it shows poor performance in haptic display. The author proposed the passive FME(Force Manipulability Ellipsoid) which can graphically show force generating ability of a passive haptic device. In this paper, performance indexes for the force approximation and pseudo friction cone are obtained with the passive FME and an optimized planar device with the indexes is proposed. Based on the above theory, experiment is conducted.

• 한국전기전자재료학회논문지
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• 제26권10호
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• pp.720-725
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• 2013

Power MOSFET operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. We have analyzed trench process, field limit ring process for fabrication of unified trench gate power MOSFET. And we have analyzed electrical characteristics of fabricated unified trench gate power MOSFET. The optimal trench process was based on SF6. After we carried out SEM measurement, we obtained superior trench gate and field limit ring process. And we compared electrical characteristics of planar and trench gate unified power MOSFET after completing device fabrication. As a result, the both of them was obtained 500 V breakdown voltage. However trench gate unified power MOSFET was shown improved Vth and on state voltage drop characteristics than planar gate unified power MOSFET.

• Transactions on Electrical and Electronic Materials
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• 제17권1호
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• pp.41-45
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• 2016

The Cs₃Sb photocathode was formed by non-vacuum process technology and successive in-situ photocathode vacuum device fabrication carried out in a process chamber. Performance testing of the device was followed. Light emission from the devices was induced by photoemitted electrons, which were accelerated by an anode electric field that was shielded from the photoemitter surface. The luminescent characteristics of the devices were investigated by measuring the optical parameters as functions of the applied anode voltages. The results showed that this approach could produce a more easily directed and controlled stream of light. These features make these devices suitable for a variety of planar lighting applications.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권1호
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• pp.22-29
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• 2006

We demonstrate highly manufacturable Multi-channel Field Effect Transistor (McFET) on bulk Si wafer. McFET shows excellent transistor characteristics, such as $5{\sim}6 times higher drive current than planar MOSFET, ideal subthreshold swing, low drain induced barrier lowering (DIBL) without pocket implantation and negligible body bias dependency, maintaining the same source/drain resistance as that of a planar transistor due to the unique feature of McFET. And suitable threshold voltage ($V_T$) for SRAM operation and high static noise margin (SNM) are achieved by using TiN metal gate electrode.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 추계학술대회 논문집
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• pp.225-226
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• 2010

• 한국광학회지
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• 제13권2호
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• pp.134-139
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• 2002

금속-클래드 평면 도파로와 접합된 측면 연마된 광섬유의 파장 및 편광 선택성에 관한 실험 결과를 보고한다. 금속의 두께와 최상부층의 굴절률을 포함한 평면 도파로의 구조가 소자의 광전송 특성에 미치는 영향을 측정하였고 그 결과를 설명하였다. 높은 파장 선택성과 편광 선택성을 가지는 조건을 예측하였고 실험으로 검증하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.276-278
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• 1997

The reliable etching process is one of the essential steps in fabricating GaN based-device. High etch rate is needed to obtain a deeply etched structure and perfect anisotropic etched facet is needed to obtain lasing profile. In the research, therefore, we had proposed a planar inductively coupled plasma etcher (Planar ICP Etcher) as a high density plasma source, and studied the etching mechanism using the $CH_4/H_2$/Ar gas mixture. Dry etching characteristics such as etch rate, anisotropic etching profile and so on, for the III-V nitride layers were investigated using Planar ICP Etcher, based on the plasma characteristic as a variation of plasma process parameters.

• Journal of the Optical Society of Korea
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• 제8권3호
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• pp.137-146
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• 2004

A new method of obtaining the eigenmode of an anisotropic planar waveguide is studied. The planar waveguide can be composed of an arbitrary number of isotropic or uniaxially anisotropic layers, provided all the optical axes arc lying in the incidence plane. Since the equation of motion for the TE mode is not different from that for the TE mode in an isotropic planar waveguide, only the equation of motion for the TM mode is of any concern. For this kind of device structure, the Maxwell's equations can be solved for one component of the electric field and one component of the magnetic field. The resulting coupled set of equations is linear in the propagation constant and the eigenmode can be easily obtained using canned numerical routines.

• Journal of Information Display
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• 제12권2호
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• pp.101-107
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• 2011

To come up with a bistable liquid crystal (LC) device using unpolarized UV light, single-step laser patterning on a photoalignment layer using a photomask was proposed to achieve an equilibrium configuration of LC molecules in contact with a periodically patterned substrate. The patterns were formed by stripes of alternating random planar and homeotropic anchoring on a submicrometer scale in the order of $0.5{\mu}m$. Two possible configurations of bistable LC cells that can be obtained by combining a micropatterned surface formed with alternating random-planar- and homeotropic-alignment with planar- or homeotropic-alignment surfaces were proposed. The alignment properties of the two proposed models were investigated, along with the microscopic switching behavior of micropatterned nematic LC cells.

• 한국재료학회지
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• 제12권3호
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• pp.195-199
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• 2002

Planar Hall effect of ferromagnetic GaMnAs thin films was investigated for the first time. The films were grown in an optimized growth condition via molecular beam epitaxy at low temperatures. For the optimization of the growth conditions, we used reflection high-energy electron diffraction, electrical conductivity, double crystal x-ray diffraction, and superconducting quantum interference device measurements techniques. We observed that the difference between the longitudinal resistance and the transverse resistance matches the planar Hall resistance. The ratio of the planar Hall resistance at saturation magnetic field to that at zero reached above 500%.