• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.7
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• pp.149-156
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• 2013

This paper presents a hardware edge detector of image signal at pixel level of CMOS image sensor (CIS). The circuit detects edges of an image based on a bump circuit combining with the pixels. The APS converts light into electrical signals and the bump circuit compares the brightness between the target pixel and its neighbor pixels. Each column on CIS 64 by 64 pixels array shares a comparator. The comparator decides a peak level of the target pixel comparing with a reference voltage. The proposed edge detector is implemented using 0.18um CMOS technology. The circuit shows higher fill factor 34% and power dissipation by 0.9uW per pixel at 1.8V supply.

• Journal of the Semiconductor & Display Technology
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• v.21 no.1
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• pp.50-55
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• 2022

Due to the wavelength shift problem of micro LED caused by the change of current density, the active matrix driving pixel circuit that is used in OLED cannot be applied to micro LED displays. Therefore, we need a gray scale method based on modulation of duration time of light emission. In this study, we propose the PWM-controlled micro LED pixel circuit based on CMOS thin film transistors (TFTs). By adopting CMOS inverter structure, we can reduce the number of storage capacitors from the circuit and make the operating speed of the circuit faster. Most of all, our circuit is designed to make operating speed of PWM circuit faster by adopting feedback effect through double gate TFT structure. As a result, it takes about 4.7ns to turn on the LED and about 5.6ns to turn it off. This operating time is short enough to avoid the color distortion and help the precise control of the gray scale.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.6 s.348
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• pp.1-8
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• 2006

In this paper, we designed a pixel circuit for AMOLED display based on organic thin film transistors and analyzed the operation with SPICE simulation. First, we theoretically designed the pixel circuit with the result of layout for fabricating $32\times32$ AMOLED panel, TFT W/L and capacitance of storage capacitor. And we simulated the designed pixel circuit using HSPICE for analyzing electrical performance. As a result of simulation, we identified the possibility of AMOLED display based on OTFTs.

• Journal of Sensor Science and Technology
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• v.17 no.1
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• pp.41-52
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• 2008

In this paper, a circuit analysis of the complementary CMOS active pixel and readout circuit is carried out. Complementary pixel structure which is different from conventional 3TR APS structure is consist of photo diode, reset PMOS, several NMOSs and PMOSs sets for complementary signals. Photo diode is modelled with Medici device program. HSPICE was used to analyze the variation of the signal feature depending on light intensity using $0.5{\mu}M$ standard CMOS process. Simulation results show that the output signal range is from 0.8 V to 4.5 V. This signal range increased 135 % output dynamic range compared to conventional 3TR pixel in the condition of 5 V power supply.

• The Journal of the Korea institute of electronic communication sciences
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• v.8 no.2
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• pp.207-212
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• 2013

A novel pixel circuit that uses only n-type low-temperature polycrystalline silicon (poly-Si) thin-film transistors (LTPS-TFTs) to compensate the threshold voltage variation of a OLED driving TFT is proposed. The proposed 6T1C pixel circuit consists of 5 switching TFTs, 1 OLED driving TFT and 1 capacitor. When the threshold voltage of driving TFT varies by ${\pm}0.33$ V, Smartspice simulation results show that the maximum error rate of OLED current is 7.05 % and the error rate of anode voltage of OLED is 0.07 % at Vdata = 5.75 V. Thus, the proposed 6T1C pixel circuit can realize uniform output current with high immunity to the threshold voltage variation of poly-Si TFT.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.10a
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• pp.600-603
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• 2008

In this paper, a new circuit design named memory-in-pixel for low power consumption of the liquid crystal display (LCD) is presented. Since each pixel has a memory, it is able to express 8 color grades using the data saved in the memory without the operation of the gate and source driver ICs so that it can reduce the power consumption of the LCD panel. A memory circuit consists of modified S-R flip-flop (NAND-type) implemented in the pixel, which can supply AC bias for operating the liquid crystal (LC) with the interlocking clocks (CLK_A and CLK_B). This circuit is more complex than the inverter-type memory circuit, but it has lower power consumption of approximately 50% than the circuit. We have investigated the power consumption both NAND and inverter-type memory circuit using a Smart SPICE for the resolution of $96{\times}128$. The estimated power consumption of the inverter-type memory was about 0.037mW. On the other hand, the NAND-type memory showed power consumption of about 0.007mW.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.3 s.357
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• pp.65-71
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• 2007

We propose a pixel-level automatic calibration circuit scheme that initializes a capacitive fingerprint sensor LSI to eliminate the influence of the surface condition and environment, which is degraded by dirt during long-time use, process variation and ambient temperature. The sample chip is fabricated on $0.35{\mu}m$ standard CMOS process. The calibration is executed by optimizing the reference voltage in each pixel to make the sensor signals of all pixels the same. The calibration control circuit is composed of the sensing circuit and charge pumping circuit, and calibrates all pixels in a short time. 16-level gray scale fingerprint images can be captured to increase the accuracy of identification. This confirms that the scheme is effective for capturing consistent clear images during long-time use.

• Journal of Sensor Science and Technology
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• v.17 no.2
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• pp.114-119
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• 2008

Wide dynamic range active pixel sensor(APS) using a charge pump circuit has been designed by using 2-poly 4-metal $0.35{\mu}M$ standard CMOS technology. The structure of the proposed APS is similar to the structure of the conventional 3-Tr APS. The proposed unit pixel consists of one photodiode and three MOSFETs. Using a charge pump circuit, the dynamic range of the proposed APS is increased, compared to the conventional 3-Tr APS.

• Journal of Information Display
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• v.3 no.3
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• pp.35-43
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• 2002

Silicon-based 0.69-inch AMOEL microdisplay with integrated driver and timing controller circuits for microdisplay applications has been developed using 0.35 ${\mu}m$ l-poly 4-metal standard CMOS process with 5 V CMOS devices and CMP (Chemical Mechanical Polishing) technology. To reduce the large data programming time consumed in a conventional current programming pixel circuit technique and to achieve uniform display, de-amplifying current mirror pixel circuit and the current-mode data driver circuit with threshold roltage compensation are proposed. The proposed current-mode data driver circuit is inherently immune to the ground-bouncing effect. The Monte-Carlo simulation results show that the proposed current-mode data driver circuit has channel-to-channel non-uniformity of less than ${\pm}$0.6 LSB under ${\pm}$70 mV threshold voltage variaions for both NMOS and PMOS transistors, which gives very good display uniformity.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1297-1300
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• 2005

We propose a new pixel design for active matrix organic light emitting diode (AM-OLED) displays using hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs). The pixel circuit is composed of five TFTs and one capacitor, and employs only one additional control signal line. It is verified by SPICE simulation results that the proposed pixel compensates the threshold voltage shift of the a-Si:H TFTs and OLED.