• 대한전자공학회논문지SD
• /
• 제42권3호
• /
• pp.17-24
• /
• 2005

본 논문에서는 단일모드 광섬유를 부착한 analog용 PIN-Photodiode를 제작하고 소자의 특성을 분석하였다. 제작된 analog 용 PIN-photodiode의 대역폭은 1.5 GHz이였으며, 암전류는 20 pA이고, 정전용량은 0.48 pF이였으며, 응답도(responsivity)는 0.9 V/W 이고, 2차 상호변조(IM2, second order distortion)는 -72 dBc이였다. 본 논문에서는 응답도와 IM2 특성을 실시간으로 모니터링하며 정렬하는 새로운 광 패키징 기술을 개발하였다. 그 결과 응답도는 0.03 V/W 향상되었으며, IM2는 $3\~5dBc$ 향상 되었고, 부적합 발생률도 $3.5\%$ 감소하였다.

• 한국광학회:학술대회논문집
• /
• 한국광학회 2003년도 하계학술발표회
• /
• pp.98-99
• /
• 2003

PIN photodiode has been used in solid-state detector for x-ray detection as a photosensor of visible light from scintillator. Since the light from CWO is short wavelength having peak at 490nm, the light is absorbed within a very shallow layer near the surface of the photodiode before arriving at the depletion layer and does not contribute to the signal. In designing the PIN photodiode, it is important to make the p-layer as shallow as possible. (omitted)

• 한국광학회:학술대회논문집
• /
• 한국광학회 1991년도 제6회 파동 및 레이저 학술발표회 Prodeedings of 6th Conference on Waves and Lasers
• /
• pp.135-138
• /
• 1991

A planar type PIN photodiode has been fabricated and discussed. We used OMVPE systems to grow the structure of u-InP/u-InP/n-InP. P-n junction was formed by Zn-diffusion method at 50$0^{\circ}C$, for 5 minitues. The device characteristics at 5V were as follows: Dark currents were distributed around 1nA. Capacitance was 1.6pF and responsivity was above 0.85 mA/mW for 1.3${\mu}{\textrm}{m}$ wavelength. Measured cut-off frequency(-3dB) at -5V was 1.1㎓.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
• /
• pp.270-273
• /
• 2000

We have fabricated and analyzed photodiodes for optical link with Si pin structures. As the results of experiment, the web patterned photodiode(type C) with $p^{+}$-guard ring showed low junction capacitance of 6~7 pF at $V_{R}$=-5V and high separation ability for optical signal(dark current : $\leq$ 5 nA, optical signal current : $\geq$ 340 nA) due to the small effective $p^{+}$-n junction area and the expanded electric field region. The fabricated Si pin photodiode can be applicable for detecting an optical signal with the wavelength of about 660~670 nm. It can also be integrated with the twin well CMOS structure to develope an one chip based optical receiver IC. IC.C.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2002년도 하계학술대회 논문집 D
• /
• pp.2285-2288
• /
• 2002

Recently, electronic personal dosimeters based upon silicon PIN photodiode or miniature GM tube were developed and have attracted a lot of attention because of the advantages of their nature such as indication of dose rate and the cumulative dose, and facilitation of record keeping. In this paper, we have developed a high-sensitivity electronic personal dosimeter with silicon PIN photodiode. The electronic personal dosimeter is constructed with silicon PIN photodiode, preamplifier, and shaping amplifier. To show the effectiveness of electronic personal dosimeter, we conducted nuclear radiation experiments using $\gamma$-ray Ba-133, Cs-137, and Co-60. The electronic personal dosimeter have a good linearity on $\gamma$-ray energy and activity.

• 전자공학회논문지
• /
• 제53권11호
• /
• pp.99-106
• /
• 2016

라돈이 기관지나 폐포에 머무르게 될 때 라돈의 붕괴로 인해 자핵종(알파선, 베타선, 감마선 등)들이 생성되면서 이것들이 방사선을 방출하는데 세포의 염색체에 돌연변이를 일으켜 폐암을 발생할 가능성이 존재한다. 다시 말해 폐암의 원인이 라돈가스 때문이라기보다는 흡수된 일부 라돈의 붕괴로 인해 생기는 부산물이 방사선을 방출하기 때문이라고 할 수 있다. 사람이 연간 노출되는 방사선의 82%가 자연방사선에 의한 것인데 그중 대부분이 라돈이다. 실내의 라돈 농도를 적절하게 제어할 수 있다면 폐암의 발생확률을 30%나 억제할 수 있다고 알려져 있다. 아직까지 실내의 라돈의 농도를 측정하는 데는 외국의 라돈 센서를 사용하고 있는 실정이다. 실내 라돈 방출량에 대한 데이터 구축과 국내에 맞는 실용적인 라돈측정기기를 개발하도록하는 연구가 필요하다. 본 논문에서는 PIN Photodiode를 이용하여 라돈의 농도를 측정하는 라돈 검출기 구현 방법을 제안한다. 실험을 통해서, PIN photodiode의 라돈 센서 모듈로서의 이용 가능성에 대하여 확인하였다.

• 제어로봇시스템학회논문지
• /
• 제9권4호
• /
• pp.296-303
• /
• 2003

A personal portable type electronic dosimeter using silicon PIN photodiode and small GM tube is recently attracting much attention due to its advantages such as an immediate indication function of dose and dose rate, alerting function, and efficient management of radiation exposure history and dose data. We designed and manufactured a semiconductor radiation detector aimed to directly measure X-ray and v-ray irradiated in silicon PIN photodiode, without using high-priced scintillation materials. Using this semiconductor radiation detector, we developed an active electronic dosimeter, which measures the exposure dose using pulse counting method. In this case, it has a shortcoming of over-evaluating the dose that shows the difference between the dose measured with electronic dosimeter and the dose exposed to the human body in a low energy area. We proposed an energy compensation filter and developed a dose conversion algorithm to make both doses indicated on the detector and exposed to the human body proportional to each other, thus enabling a high-precision dose measurement. In order to prove its reliability in conducting personal dose measurement, crucial for protecting against radiation, the implemented electronic dosimeter was evaluated to successfully meet the IEC's criteria, as the KAERI (Korea Atomic Energy Research Institute) conducted test on dose indication accuracy, and linearity, energy and angular dependences.

• 한국광학회:학술대회논문집
• /
• 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
• /
• pp.196-200
• /
• 1989

The physical properties related to the GaInAs/InP crystal grown by LPE are discussed in terms of both the design and operation characteristics of the GaInAs/InP Pin photodiode has cutoff frequency of 358 MHz and responsivity, 0.53 A/W (λ=1.3${\mu}{\textrm}{m}$), with dark current density as low as 4$\times$10-4/$\textrm{cm}^2$ under reverse bias voltage of 5V.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 B
• /
• pp.754-756
• /
• 1999

In this paper, we have developed a high-sensitivity SNRD(Semiconductor Nuclear Radiation Detector) using silicon PIN photodiode. The SNRD is constructed with silicon PIN photodiode(S3590-05), preamplifier and shaping amplifier. To show the effectiveness of SNRD, nuclear radiation experiments are conducted with $\gamma$-ray Ba-133, Cs-137 and Co-60. The SNRD is different in characteristics of the energy spectrum to scintillation detectors. However, the SNRD have a good linearity on $\gamma$-ray energy and activity. The results of this paper can be applied to electronic personal dosimeter.

• 전자공학회논문지A
• /
• 제31A권6호
• /
• pp.88-97
• /
• 1994

We describe the design, fabrication, and performance of the optical fiber-photodiode 1$\times$12 arry module using mesa-type InS10.53T GaS10.47TAS/INP 1$\times$12 PIN photodiode array. We fabricated the PIN PD array for high-speed optical fiber parallel data link optimizing quantum efficiency, operating speed sensitivity from the PIN-FET structure, and electrical AC crosstalk. For each element of the array, the diameter of the photodetective area is 80 $\mu$m, the diameter of the p-metal pad is 90 $\mu$m, and the photodiode seperation is 250 $\mu$m to use Si v-groove. Ground conductor line is placed around diodes and p-metal pads are formed in zigzag to reduce Ac capacitance coupling between array elements. The dark current (IS1dT) is I nA and the capacitance(CS1pDT) is 0.9 pF at -5 V. No signifcant variations of IS1dT and CPD from element to element in the array were observed. We calulated the coupling efficiency for 10/125 SMF and 50/125 GI MMF, and measured the responsivity of the PD array at the wavelength is 1.55 $\mu$ m. Responsivities are 0.93 A/W for SMF and 0.96 A/W for MMF. The optical fiber-PD array module is useful in numerous high speed digital and analog photonic system applications.