Proceedings of the Optical Society of Korea Conference (한국광학회:학술대회논문집)
- 1991.06a
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- Pages.135-138
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- 1991
Fabrication of planar type GaInAs PIN photodiode and its characteristics
평면형 GaInAs/InP PIN Photodiode 제작 및 특성
Abstract
A planar type PIN photodiode has been fabricated and discussed. We used OMVPE systems to grow the structure of u-InP/u-InP/n-InP. P-n junction was formed by Zn-diffusion method at 50
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