Fabrication and application performance of the GaInAs/InP PIN photodiode for the light-wave communication

고속 장파장 광통신을 위한 GaInAs/InP PIN 광검출기의 제작 및 응용특성

The physical properties related to the GaInAs/InP crystal grown by LPE are discussed in terms of both the design and operation characteristics of the GaInAs/InP Pin photodiode has cutoff frequency of 358 MHz and responsivity, 0.53 A/W (λ=1.3${\mu}{\textrm}{m}$), with dark current density as low as 4$\times$10-4/$\textrm{cm}^2$ under reverse bias voltage of 5V.