• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.42 no.3 s.333
• /
• pp.17-24
• /
• 2005

We fabricated PIN-Photodiodes with a single mode fiber for analog communications and analyzed characteristics of the devices. The fabricated PIN-Photodiode shows a bandwidth of 1.5 GHz, a dark current of 20 p4 a capacitance of 0.48 pF, and the responsivity of 0.9 V/W, a second order distortion of -72 dBc. In this paper, we developed a new optical Packaging technology that is aligning in real-time monitoring of both responsivity and IM2 characteristics. As a result responsivity has been improved by 0.03 V/W, and also U has been improved by $3\~5\;dBc$. On the other hand, failure ratio has been reduced by $3.5\%$.

• Proceedings of the Optical Society of Korea Conference
• /
• 2003.07a
• /
• pp.98-99
• /
• 2003

PIN photodiode has been used in solid-state detector for x-ray detection as a photosensor of visible light from scintillator. Since the light from CWO is short wavelength having peak at 490nm, the light is absorbed within a very shallow layer near the surface of the photodiode before arriving at the depletion layer and does not contribute to the signal. In designing the PIN photodiode, it is important to make the p-layer as shallow as possible. (omitted)

• Proceedings of the Optical Society of Korea Conference
• /
• 1991.06a
• /
• pp.135-138
• /
• 1991

A planar type PIN photodiode has been fabricated and discussed. We used OMVPE systems to grow the structure of u-InP/u-InP/n-InP. P-n junction was formed by Zn-diffusion method at 50$0^{\circ}C$, for 5 minitues. The device characteristics at 5V were as follows: Dark currents were distributed around 1nA. Capacitance was 1.6pF and responsivity was above 0.85 mA/mW for 1.3${\mu}{\textrm}{m}$ wavelength. Measured cut-off frequency(-3dB) at -5V was 1.1㎓.

• Proceedings of the IEEK Conference
• /
• 2000.06b
• /
• pp.270-273
• /
• 2000

We have fabricated and analyzed photodiodes for optical link with Si pin structures. As the results of experiment, the web patterned photodiode(type C) with $p^{+}$-guard ring showed low junction capacitance of 6~7 pF at $V_{R}$=-5V and high separation ability for optical signal(dark current : $\leq$ 5 nA, optical signal current : $\geq$ 340 nA) due to the small effective $p^{+}$-n junction area and the expanded electric field region. The fabricated Si pin photodiode can be applicable for detecting an optical signal with the wavelength of about 660~670 nm. It can also be integrated with the twin well CMOS structure to develope an one chip based optical receiver IC. IC.C.

• Proceedings of the KIEE Conference
• /
• 2002.07d
• /
• pp.2285-2288
• /
• 2002

Recently, electronic personal dosimeters based upon silicon PIN photodiode or miniature GM tube were developed and have attracted a lot of attention because of the advantages of their nature such as indication of dose rate and the cumulative dose, and facilitation of record keeping. In this paper, we have developed a high-sensitivity electronic personal dosimeter with silicon PIN photodiode. The electronic personal dosimeter is constructed with silicon PIN photodiode, preamplifier, and shaping amplifier. To show the effectiveness of electronic personal dosimeter, we conducted nuclear radiation experiments using $\gamma$-ray Ba-133, Cs-137, and Co-60. The electronic personal dosimeter have a good linearity on $\gamma$-ray energy and activity.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.53 no.11
• /
• pp.99-106
• /
• 2016

When radon is staying at alveoli and bronchial tubes, the collapse of radon creates progeny nuclides (alpha ray, beta ray, gamma ray, etc.). They emit radiation causing a mutation in the chromosome of the cell, resulting in lung cancer. In other words, the main cause of lung cancer is radiation emitting as the result of radon collapse rather than radon gas. The 82% of radiation exposed to people is the natural radiation. Most of the natural radiation is radon. If we properly control the concentration of radon indoors, the probability of occurrence of lung cancer could be decreases to be 70%. Until now, to measure the indoor radon concentration, imported radon sensors are needed. So, DB construction of indoor radon emission and popular radon measuring apparatus should be developed. In this paper, we propose the radon detecting method using PIN photodiode. Also, we confirmed the PIN photodiode could be used as radon sensor module through some experimental studies.

• Journal of Institute of Control, Robotics and Systems
• /
• v.9 no.4
• /
• pp.296-303
• /
• 2003

A personal portable type electronic dosimeter using silicon PIN photodiode and small GM tube is recently attracting much attention due to its advantages such as an immediate indication function of dose and dose rate, alerting function, and efficient management of radiation exposure history and dose data. We designed and manufactured a semiconductor radiation detector aimed to directly measure X-ray and v-ray irradiated in silicon PIN photodiode, without using high-priced scintillation materials. Using this semiconductor radiation detector, we developed an active electronic dosimeter, which measures the exposure dose using pulse counting method. In this case, it has a shortcoming of over-evaluating the dose that shows the difference between the dose measured with electronic dosimeter and the dose exposed to the human body in a low energy area. We proposed an energy compensation filter and developed a dose conversion algorithm to make both doses indicated on the detector and exposed to the human body proportional to each other, thus enabling a high-precision dose measurement. In order to prove its reliability in conducting personal dose measurement, crucial for protecting against radiation, the implemented electronic dosimeter was evaluated to successfully meet the IEC's criteria, as the KAERI (Korea Atomic Energy Research Institute) conducted test on dose indication accuracy, and linearity, energy and angular dependences.

• Proceedings of the Optical Society of Korea Conference
• /
• 1989.02a
• /
• pp.196-200
• /
• 1989

The physical properties related to the GaInAs/InP crystal grown by LPE are discussed in terms of both the design and operation characteristics of the GaInAs/InP Pin photodiode has cutoff frequency of 358 MHz and responsivity, 0.53 A/W (λ=1.3${\mu}{\textrm}{m}$), with dark current density as low as 4$\times$10-4/$\textrm{cm}^2$ under reverse bias voltage of 5V.

• Proceedings of the KIEE Conference
• /
• 1999.11c
• /
• pp.754-756
• /
• 1999

In this paper, we have developed a high-sensitivity SNRD(Semiconductor Nuclear Radiation Detector) using silicon PIN photodiode. The SNRD is constructed with silicon PIN photodiode(S3590-05), preamplifier and shaping amplifier. To show the effectiveness of SNRD, nuclear radiation experiments are conducted with $\gamma$-ray Ba-133, Cs-137 and Co-60. The SNRD is different in characteristics of the energy spectrum to scintillation detectors. However, the SNRD have a good linearity on $\gamma$-ray energy and activity. The results of this paper can be applied to electronic personal dosimeter.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.31A no.6
• /
• pp.88-97
• /
• 1994

We describe the design, fabrication, and performance of the optical fiber-photodiode 1$\times$12 arry module using mesa-type InS10.53T GaS10.47TAS/INP 1$\times$12 PIN photodiode array. We fabricated the PIN PD array for high-speed optical fiber parallel data link optimizing quantum efficiency, operating speed sensitivity from the PIN-FET structure, and electrical AC crosstalk. For each element of the array, the diameter of the photodetective area is 80 $\mu$m, the diameter of the p-metal pad is 90 $\mu$m, and the photodiode seperation is 250 $\mu$m to use Si v-groove. Ground conductor line is placed around diodes and p-metal pads are formed in zigzag to reduce Ac capacitance coupling between array elements. The dark current (IS1dT) is I nA and the capacitance(CS1pDT) is 0.9 pF at -5 V. No signifcant variations of IS1dT and CPD from element to element in the array were observed. We calulated the coupling efficiency for 10/125 SMF and 50/125 GI MMF, and measured the responsivity of the PD array at the wavelength is 1.55 $\mu$ m. Responsivities are 0.93 A/W for SMF and 0.96 A/W for MMF. The optical fiber-PD array module is useful in numerous high speed digital and analog photonic system applications.