• 제목/요약/키워드: Piezoresistive sensors

검색결과 84건 처리시간 0.024초

단결정 및 다결정 실리콘 압력센서의 온도특성 비교 (Comparison of Temperature Characteristics Between Single and Poly-crystalline Silicon Pressure Sensor)

  • 박성준;박세광
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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    • pp.342-344
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    • 1995
  • Using piezoresistive effects of single-crystal and poly-crystalline silicon, pressure sensors of the same pattern were fabricated for comparison of temperature characteristics. Optimum size and aspect ratio of rectangular sensor diaphragm were calculated by FEM. For polsilicon pressure sensor, polysilicon resistors of Wheatstone bridge were deposited by LPCVD to be used in a wide' temperature range. Polysilicon pressure sensors showed more stable temperature characteristics than single-crysta1 silicon in the range of $-20\sim125[^{\circ}C]$. To get low TCO (Temperature Coefficient of Offset), below $\pm$3 [${\mu}V/V/^{\circ}C$], it is needed for each TCR of piezoresistors to have a deviation within $\pm25[ppm/^{\circ}C]$ less than $\pm500[ppm/^{\circ}C]$ of resistors for polysilicon pressure sensor can result in low TCS(Temperature Coefficient of Sensitivity) of -0.1[%FS/$^{\circ}C$].

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다결정실리콘 박막의 센서에의 응용 (Applications of Polycrystalline Silicon Layer to Sensors)

  • 박성준;박세광
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1994년도 하계학술대회 논문집 C
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    • pp.1226-1228
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    • 1994
  • Applications of poly-Si layers which are important as sensing and structural material of various sensors were reviewed in this research. A piezoresistive pressure sensor with piezoresistors has sensitivity of $6.93{\mu}$ V/(VmmHg) within 300mmHg. Temperature sensor was studied with measurement range of $-40{\sim}140^{\circ}C$ and $400{\sim}800^{\circ}C$ using boron-doped and undoped poly-Si resistors, respectively. Poly-Si layer was used to transduce volume change of polyimide to stress of silicon diaphragm for humidity sensor.

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TMAH/IPA/pyrazine용액에 있어서 전기화학적 식각정지법의 압력센서에의 응용 (Application of Electrochemical Etch-stop in TMAH/IPA/pyrazine Solution to Pressure Sensors)

  • 박진성;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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    • pp.423-426
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    • 1998
  • Piezoresistive pressure sensors have fabricated using electrochemical etch-stop technique. Si diaphragm having thickness of n-epi. layer was fabricated and used to detect pressure range from 0 to 1 kg/$\textrm{cm}^2$. Piezoresistors were diffused 3${\times}$10$\^$18/ cm$\^$-3/ and placed at diaphragm edge for maximum pressure detection. The characteristics of electrochemical etch-stop in TMAH/lPA/pyrazine solution were also discussed. I-V curves of n and p-type Si in TMAH/lPA/pyrazine solution were obtained. Etching rate is highest at optimum etching condition, TMAH 25wt.%/IPA 17vo1.%/pyrazine 0.1/100m1, thus the elapsed time of etch-stop was reduced.

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압력센서와 온습도센서를 이용한 일기예보 시스템의 개발을 위한 데이터 분석 (Data analysis for weather forecast system using pressure, temperature and humidity sensors)

  • 김원재;박세광
    • 센서학회지
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    • 제8권3호
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    • pp.253-258
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    • 1999
  • 본 논문은 일기에 관한 대표적인 정보인 온도, 습도, 그리고 기압의 변화를 감지하여 일기를 예측하는 일기예보시스템을 개발함으로써, 가정에서 쉽게 일기에 대한 정보를 얻을 수 있도록 하는데 목적이 있다. 이를 위해 기상청으로부터 기상정보와 일기와의 관계를 분석하여, 차후 측정된 기상정보로부터 일기예보를 하는데 필요한 판단기준을 마련하였다. 또한, 자체적인 데이터 수집을 위해 반도체 압저항성을 이용한 압력센서와 온습도센서를 제작하고, 마이크로프로세서를 이용하여 시스템을 제작하였다.

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Nd:YAG Laser 직접 각인을 이용한 Carbon 스트레인 센서 (Carbon strain sensor using Nd: YAG laser Direct Writing)

  • 주동현;윤상우;김주한;박우태
    • 마이크로전자및패키징학회지
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    • 제25권1호
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    • pp.35-40
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    • 2018
  • Nd:YAG Laser를 이용하여 polyimide film에 탄화(carbonization)를 진행하여 Carbon을 생성하여 저가의 센서를 간단한 제조과정으로 만들었다. 이를 통하여 유연한 저가형 압저항 센서의 특성에 관한 연구를 수행하였다. 기존에 많은 연구들이 Polyimide에 $10.6{\mu}m$의 파장을 가지는 $CO_2$ laser를 이용하여 carbonization을 하여 센서를 제작하였다. 본 논문에서는 polyimide film에 $1.064{\mu}m$의 파장을 가지는Nd:YAG laser를 이용하여 carbonization(탄화공정)을 진행하였다. 또한 Nd:YAG laser를 사용하여 polyimide film위에 직접 탄화시키며 carbon을 생성하는 최적의 전력밀도($W/cm^2$)과 속도(scan rate) 조건 조합을 찾아 해상도를 높였다. $CO_2$ laser를 사용하였던 기존의 선행연구에서는 carbon생성의 최소 선폭이 $140{\sim}220{\mu}m$의 길이를 가졌지만, 본 연구에서는 카본의 생성되는 선폭이 $35{\sim}40{\mu}m$으로 축소시켰다. 이번 연구에서 제작된 센서의 초기 면저항은 $100{\sim}300{\Omega}/{\square}$ 이였다. 곡률 반경 21 R 로 인장을 하였을 때 저항이 30% 줄어들었고, 이를 통하여 계산된 게이지 팩터는 56.6이였다. 본 연구는 압저항 센서를 제조하기 위한 단순하고, 매우 유연하고 저렴한 공정을 제공한다.

Study of body movement monitoring utilizing nano-composite strain sensors contaning Carbon nanotubes and silicone rubber

  • Azizkhani, Mohammadbagher;Kadkhodapour, Javad;Anaraki, Ali Pourkamali;Hadavand, Behzad Shirkavand;Kolahchi, Reza
    • Steel and Composite Structures
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    • 제35권6호
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    • pp.779-788
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    • 2020
  • Multi-Walled Carbon nanotubes (MWCNT) coupled with Silicone Rubber (SR) can represent applicable strain sensors with accessible materials, which result in good stretchability and great sensitivity. Employing these materials and given the fact that the combination of these two has been addressed in few studies, this study is trying to represent a low-cost, durable and stretchable strain sensor that can perform excellently in a high number of repeated cycles. Great stability was observed during the cyclic test after 2000 cycles. Ultrahigh sensitivity (GF>1227) along with good extensibility (ε>120%) was observed while testing the sensor at different strain rates and the various number of cycles. Further investigation is dedicated to sensor performance in the detection of human body movements. Not only the sensor performance in detecting the small strains like the vibrations on the throat was tested, but also the larger strains as observed in extension/bending of the muscle joints like knee were monitored and recorded. Bearing in mind the applicability and low-cost features, this sensor may become promising in skin-mountable devices to detect the human body motions.

CMOS Microcontroller IC와 고밀도 원형모양SOI 마이크로센서의 단일집적 (A Monolithic Integration with A High Density Circular-Shape SOI Microsensor and CMOS Microcontroller IC)

  • 이명옥;문양호
    • 전기전자학회논문지
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    • 제1권1호
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    • pp.1-10
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    • 1997
  • It is well-known that rectangular bulk-Si sensors prepared by etch or epi etch-stop micromachining technology are already in practical use today, but the conventional bulk-Si sensor shows some drawbacks such as large chip size and limited applications as silicon sensor device is to be miniaturized. We consider a circular-shape SOI(Silicon-On-Insulator) micro-cavity technology to facilitate multiple sensors on very small chip, to make device easier to package than conventional sensor like pressure sensor and to provide very high over-pressure capability. This paper demonstrates the cross-functional results for stress analyses(targeting $5{\mu}m$ deflection and 100MPa stress as maximum at various applicable pressure ranges), for finding permissible diaphragm dimension by output sensitivity, and piezoresistive sensor theory from two-type SOI structures where the double SOI structure shows the most feasible deflection and small stress at various ambient pressures. Those results can be compared with the ones of circular-shape bulk-Si based sensor$^{[17]}. The SOI micro-cavity formed the sensors is promising to integrate with calibration, gain stage and controller unit plus high current/high voltage CMOS drivers onto monolithic chip.

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SOI 압력(壓力)센서 (SOl Pressure Sensors)

  • 정귀상;석전성;중촌철랑
    • 센서학회지
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    • 제3권1호
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    • pp.5-11
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    • 1994
  • 본 논문은 실리콘기판 직접접합기술과 에피택샬 성장법으로 각각 형성한 SOI구조, 즉 Si/$SiO_{2}$/Si 및 Si/$Al_{2}O_{3}$/Si 상에 제작한 압저항형 압력센서의 특성을 기술한다. SOI구조의 절연층을 압저항의 유전체 분리막으로 이용한 압력센서는 $300^{\circ}C$ 까지 사용 가능했다. SOI구조의 절연층을 박막 실리콘 다아어프램 형성시 에칭 중지막으로 이용한 경우, 제작된 압력센서의 200개 소자들에 대한 압력감도의 변화는 ${\pm}2.3%$ 이내로 제어 가능했다. 더구나 실리콘 기판 직접접합기술과 에피택샬 성장법의 결합으로 형성한 더불 SOI구조($Si/Al_{2}O_{3}/Si/SiO_{2}/Si$)상에 제작된 압력센서는 고온분위기에서 사용 가능할 뿐만 아니라 고분해 능력을 갖는 특성을 보였다.

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Design, calibration and application of wireless sensors for structural global and local monitoring of civil infrastructures

  • Yu, Yan;Ou, Jinping;Li, Hui
    • Smart Structures and Systems
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    • 제6권5_6호
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    • pp.641-659
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    • 2010
  • Structural Health Monitoring (SHM) gradually becomes a technique for ensuring the health and safety of civil infrastructures and is also an important approach for the research of the damage accumulation and disaster evolving characteristics of civil infrastructures. It is attracting prodigious research interests and the active development interests of scientists and engineers because a great number of civil infrastructures are planned and built every year in mainland China. In a SHM system the sheer number of accompanying wires, fiber optic cables, and other physical transmission medium is usually prohibitive, particularly for such structures as offshore platforms and long-span structures. Fortunately, with recent advances in technologies in sensing, wireless communication, and micro electro mechanical systems (MEMS), wireless sensor technique has been developing rapidly and is being used gradually in the SHM of civil engineering structures. In this paper, some recent advances in the research, development, and implementation of wireless sensors for the SHM of civil infrastructures in mainland China, especially in Dalian University of Technology (DUT) and Harbin Institute of Technology (HIT), are introduced. Firstly, a kind of wireless digital acceleration sensors for structural global monitoring is designed and validated in an offshore structure model. Secondly, wireless inclination sensor systems based on Frequency-hopping techniques are developed and applied successfully to swing monitoring of large-scale hook structures. Thirdly, wireless acquisition systems integrating with different sensing materials, such as Polyvinylidene Fluoride(PVDF), strain gauge, piezoresistive stress/strain sensors fabricated by using the nickel powder-filled cement-based composite, are proposed for structural local monitoring, and validating the characteristics of the above materials. Finally, solutions to the key problem of finite energy for wireless sensors networks are discussed, with future works also being introduced, for example, the wireless sensor networks powered by corrosion signal for corrosion monitoring and rapid diagnosis for large structures.

탄소나노튜브 고분자 복합체 기반 스마트 구조건전성 진단 (Smart Structural Health Monitoring Using Carbon Nanotube Polymer Composites)

  • 박영빈;;;김상우
    • Composites Research
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    • 제22권6호
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    • pp.1-6
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    • 2009
  • 탄소나노튜브 고분자 복합체는, 외력에 의한 변형에 따라 전기적 저항이 변화하는 피에조저항(piezoresistivity) 거동을 나타낸다. 피에조저항은 고분자 모재 내에서 탄소나노튜브가 형성하는 전기전도망(conductive network)의 변화에 의해서 발현된다. 피에조저항 낮은 탄소나노튜브 함유량에서 더 현저하게 나타난다. 탄소섬유, 카본블랙 등 타 탄소기반 소재에 비해 전기전도도와 길이 대 직경비(aspect ratio)가 월등히 우수하기 때문에, 낮은 탄소나노튜브의 함유량에서도 스트레인 센싱시스템을 구현할 수 있다. 본 연구에서는, 구조물에 부착 또는 임베드 시켜서 구조물의 건전성을 실시간을 진단할 수 있는 탄소나노튜브 고분자 복합체 기반 센싱시스템을 개발하였다. 센서는 열가소성 수지와 다중벽 탄소나노튜브를 사용하여 필름 형태로 제조되었으며, 센싱 성능은 나노복합체를 구조물에 부착한 후 인장, 굽힘, 압축 등의 다양한 형태의 하중을 가하면서 평가하였다.