• Transactions of the Korean Society of Mechanical Engineers A
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• v.31 no.4
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• pp.417-424
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• 2007

This paper reports fabrication and characterization of a pressure sensor using a pitch-based carbon fiber. Pitch-based carbon fibers have been shown to exhibit the piezoresistive effect, in which the electric resistance of the carbon fiber changes under mechanical deformation. The main structure of pressure sensors was built by performing backside etching on a SOI wafer and creating a suspended square membrane on the front side. An AC electric field which causes dielectrophoresis was used for the alignment and deposition of a carbon fiber across the microscale gap between two electrodes on the membrane. The fabricated pressure sensors were tested by applying static pressure to the membrane and measuring the resistance change of the carbon fiber. The resistance change of carbon fibers clearly shows linear response to the applied pressure and the calculated sensitivities of pressure sensors are $0.25{\sim}0.35 and 61.8 ${\Omega}/k{\Omega}{\cdot}bar$ for thicker and thinner membrane, respectively. All these observations demonstrated the possibilities of carbon fiber-based pressure sensors.

• Journal of Sensor Science and Technology
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• v.3 no.1
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• pp.19-25
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• 1994

When etching rectangular convex corners of silicon using anisotropic etchants such as KOH, deformation of the edges always occurs due to undercutting. Therefore, it is necessary to correct the mass pattern for compensation. Experiments for the compensation method to prevent this phenomenon were carried out. In the result, the compensation pattern of a regular square is suitable for acceleration sensors considering space. With this consequence, silicon piezoresistive acceleration sensor with compensated square pillar type of mass has been fabricated using SDB wafer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.274-274
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• 2008

This paper describes on the fabrication and characteristics of a 3C-SiC (Silicon Carbide) micro pressure sensor for harsh environment applications. The implemented micro pressure sensor used 3C-SiC thin-films heteroepitaxially grown on SOI (Si-on-insulator) structures. This sensor takes advantages of the good mechanical properties of Si as diaphragms fabricated by D-RIE technology and temperature properties of 3C-SiC piezoresistors. The fabricated pressure sensors were tasted at temperature up to $250^{\circ}C$ and indicated a sensitivity of 0.46 mV/V*bar at room temperature and 0.28 mV/V*bar at $250^{\circ}C$. The fabricated 3C-SiC/SOI pressure sensor presents a high-sensitivity and excellent temperature stability.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1529-1531
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• 2003

Thick film mechanical sensors can be categorized into four main areas piezoresistive, piezoelectric, piezocapastive and mechanic tube. In this areas, the thick film strain gage is the earliest example of a primary sensing element based on the substrates. The latest thick film sensor is used various pastes that have been specifically developed for pressure sensor application. The screen printing technique has been used to fabricate the pressure sensors on alumina substrate($Al_2O_3$). Thick film capacitive of strain sensing characteristics are reported and dielectric paste based on (Ti+Ba) materials. The electric property of dielectric paste has been studied and exhibit good properly with good gage factor comparable to piezoresistive strain gage. New piezocapacitive strain sensor was designed and tested. The output of capacitive value was good characteristics.

• Journal of Korea Society of Industrial Information Systems
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• v.19 no.2
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• pp.31-36
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• 2014

In this paper, we developed an intergrated piezoresistive temperature and humidity sensor using nano-technology, and evaluated the properties. In the measuring range from $20^{\circ}C$ to $80^{\circ}C$, output sensitivity of temperature was about 0.75mV/$1^{\circ}C$. Output sensitivity of humidity was about 1.35mV/10%(RH). Therefore, developed sensor suggests that it is possible applicable to the general residential environment.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.559-560
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• 2006

The paper presents solutions of conventional piezoresistive pressure sensors. Deflection of diaphragm by external stress causes some problems, because the electrode is deposited on the diaphragm formed piezoresistors. To solve these problems, piezoresistors is formed by two implantation steps. To fabricate diaphragm, the backside silicon etching step is done by immersing the wafer into TMAH solution. $30{\mu}m$ thick diaphragm is obtained. Sensitivity of the piezoresistive pressure sensor fabricated is 48.6 mV/V-psi.

• Journal of Sensor Science and Technology
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• v.14 no.4
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• pp.237-243
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• 2005

Strain gauge type load cell is used widely as weight sensor. However, it has problems such as noise, power consumption, high cost and big size. Semiconductor type piezoresistive pressure sensor is practically used in recent for low hysteresis, good linearity, small size, light weight and strong on vibration. In this paper, we have fabricated the piezoresistive pressure sensor and packaged the miniature weight sensor. We packaged the miniature weight sensor by flip-chip bonding between die and PCB for durability, because the weight sensor is directly contacted on a physical solid distinct from air and oil pressure. We measured the characteristics of the weight sensor, which had the output of $10{\sim}80$ mV on the weight range of $0{\sim}2$ kg. In the result, we could fabricate the weight sensor with an accuracy of 3 %FSO linearity.

• Journal of Sensor Science and Technology
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• v.33 no.3
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• pp.165-172
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• 2024

In this study, we investigated the detection properties of piezoresistive carbon nanotubes/polydimethylsiloxane (CNT/PDMS) devices with porous structures under applied pressure. The device, having dimensions of 10 mm × 10 mm × 5 mm, was fabricated with a porosity of 74.5%. To fabricate piezoresistive CNT/PDMS devices, CNTs were added using two different methods. In the first method, the CNTs were mixed with PDMS before the fabrication of the porous structure, while in the second, the CNTs were coated after the fabrication of the porous structure. Various detection properties of the fabricated devices were examined at different applied pressures. The CNT-coated device exhibited stable outputs with lesser variation than the CNT-mixed device. Moreover, the CNT-coated device exhibited improved reaction properties. The response time of the CNT-coated device was 1 min, which was approximately about 20 times faster than that of the CNT-mixed device. Considering these properties, CNT-coated devices are more suitable for sensing devices. To verify the CNT-coated device as a real sensor, it was applied to the gripping sensor system. A multichannel sensor system was used to measure the pressure distribution of the gripping sensor system. Under various gripping conditions, this system successfully measured the distributed pressures and exhibited stable dynamic responses.

• Journal of Sensor Science and Technology
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• v.33 no.3
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• pp.173-178
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• 2024

Development of pressure sensors for harsh environments with high pressure, humidity, and temperature is essential for many applications in the aerospace, marine, and automobile industries. However, existing materials such as polymers, adhesives, and semiconductors are not suitable for these conditions and require materials that are less sensitive to the external environment. This study proposed a pressure sensor that could withstand harsh environments and had high durability and precision. The sensor comprised a piezoresistor pattern and an insulating film directly formed on a stainless-steel membrane. To achieve the highest sensitivity, a pattern design method was proposed that considered the stress distribution in a circular membrane using finite element analysis. The manufacturing process involved depositing and etching a dielectric insulating film and metal piezoresistive material, resulting in a device with high linearity and slight hysteresis in the range of a maximum of 40 atm. The simplicity and effectiveness of this sensor render it a promising candidate for various applications in extreme environments.

• Journal of Sensor Science and Technology
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• v.31 no.3
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• pp.139-144
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• 2022

Advanced tactile sensors are receiving significant attention in various industries such as extended reality, electronic skin, organic user interfaces, and robotics. The capabilities of advanced tactile sensors require a variety of functions, including position sensing, pressure sensing, and material recognition. Moreover, they should comsume less power and be bio-friendly with human contact. Recently, a tactile sensor based on the triboelectrification effect was developed. Triboelectric tactile sensors have the advantages of wide material availability, simple structure, and low manufacturing cost. Because they generate electricity by contact, they have low power consumption compared to conventional tactile sensors such as capacitive and piezoresistive. Furthermore, they have the ability to recognize the contact material as well as execute position and pressure sensing functions using the triboelectrification effect. The aim of this study is to introduce the progress of research on triboelectrification-based tactile sensors with various functions such as position sensing, pressure sensing and contact material recognition.