Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Fabrication of the piezoresistive pressure sensor using implantation steps

  • Hong, K.K. (Dept. of Electrical and Computer Eng., University of Seoul) ;
  • Jung, Y.C. (Dept. of Electrical and Computer Eng., University of Seoul) ;
  • Cho, J.H. (Dept. of Electrical and Computer Eng., University of Seoul) ;
  • Hong, S.K. (Dept. Digital Electronic Design, Hyejeon College) ;
  • Kim, C.J. (Dept. of Electrical and Computer Eng., University of Seoul)
  • Published : 2006.06.21
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Abstract

The paper presents solutions of conventional piezoresistive pressure sensors. Deflection of diaphragm by external stress causes some problems, because the electrode is deposited on the diaphragm formed piezoresistors. To solve these problems, piezoresistors is formed by two implantation steps. To fabricate diaphragm, the backside silicon etching step is done by immersing the wafer into TMAH solution. $30{\mu}m$ thick diaphragm is obtained. Sensitivity of the piezoresistive pressure sensor fabricated is 48.6 mV/V-psi.

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