• Composites Research
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• 제15권2호
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• pp.11-17
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• 2002

우수한 동적 감지특서을 갖는 압전필름센서는 구조 건전성 모니터링이나 평가와 같은 구조물과 재료의 변화를 분석하는데 사용될 수 있다. 압전필름센서의 이러한 특성을 이용하여 Gr/Ep 복합재 평판의 충격 손상개시를 모니터링하였다. 압전필름센서와 스트레인게이지를 Gr/Ep 복합재 평판에 부착하여 다양한 조건의 에너지에 대한 충격시험을 낙하식 충격 시험기를 사용하여 수행하였다. 충격시험을 수행하는 동안 영구압입, 기지균열, 층간분리와 같은 충격 손상개시를 예측하기 위하여 센서신호를 분석하였다. 충격에너지를 초기 손상이 발생할 수 있는 크기 이상으로 증가시키면 손상의 개시와 진전에 대한 정보를 포함하는 특정 센서 신호를 관찰할 수 있었다. 특히, 압전필름세서는 스트레인게이지 보다 충격 손상개시 및 진전에 대한 좋은 감지 특성을 보여주었다.

• 센서학회지
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• 제17권6호
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• pp.418-424
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• 2008

The PZT based piezoelectric thick films prepared by screen printing method have been mainly used as a functional material for MEMS applications due to their compatibility of MEMS process. However the screen printed thick films generally reveal poor electrical and mechanical properties because of their porous microstructure. To improve microstructure we mixed attrition milled powder with ball milled powder of 0.01Pb$(Mg_{1/2}W_{1/2})O_3$-0.41Pb$(Ni_{1/3}Nb_{2/3})O_3$-$0.35PbTiO_3$-$0.23PbZrO_3$+0.1 wt% ${Y_2}{O_3}$+1.5 wt% ZnO composition. By mixing 25 % of attrition milled powder and 75 % of ball milled powder, the broadest particle size distribution was obtained, leading to a dense thick film with crack-free microstructure and improved dielectric properties. The X-ray diffraction analysis revealed that the film was in wellcrystallized perovskite phase. The remanent polarization was increased from $13.7{\mu}C/cm^2$ to $23.3{\mu}C/cm^2$ at the addition of 25 % attrition milled powder.

• 센서학회지
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• 제16권6호
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• pp.462-466
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• 2007

Aluminum nitride (AlN) thin films were deposited on Si substrates by using polycrystalline (poly) 3C-SiC buffer layers, in which the AlN film was grown by pulsed reactive magnetron sputtering. Characteristics of grown AlN films were investigated experimentally by means of FE-SEM, X-ray diffraction, and FT-IR, respectively. The columnar structure of AlN thin films was observed by FE-SEM. X-ray diffraction pattern proved that the grown AlN film on 3C-SiC layers had highly (002) orientation with low value of FWHM (${\Theta}=1.3^{\circ}$) in the rocking curve around (002) reflections. These results were shown that almost free residual stress existed in the grown AlN film on 3C-SiC buffer layers from the infrared absorbance spectrum. Therefore, the presented results showed that AlN thin films grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 학술대회 논문집 전문대학교육위원
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• pp.35-39
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• 2001

The purpose of this paper is improvement the piezoelectric of Polyvinylidene fluoride(PVDF) organic thin films is fabricated by vapor deposition method. The piezoelectric of PVDF organic thin films attributed to dipole orientation in crystalline region. Also, the piezoelectric characteristic reduced that dipole moments orientation in crystalline region interfered with impurity carriers. Therefore, PVDF organic thin films fabricated with high substrate temperature condition for crystallinity improvement. The crystallinity of PVDF organic thin films fabricated by this condition increase from 47 to 67.8%. The ion density of PVDF organic thin films fabricated by substrate temperature variation from $30^{\circ}C$ to $105^{\circ}C$ decreased from $1.62{\times}10^{16}cm^3$ to $6.75{\times}10^{11}cm^3$ when temperature and frequency were $100^{\circ}C$, 10Hz, respectively. The $d_{33}$ and piezo-voltage coefficient of PVDF organic thin films increased from 20pPC/N to 33pC/N and $162.9{\times}10^{-3}V{\cdot}m/N$ to $283.2{\times}10^{-3}V{\cdot}m/N$, respectively. For the sake of the applications of piezoelectric sensor, we analyzed the output voltage characteristic as a function of the distance between an oscillator of 28kHz and PVDF organic thin film transducer. From this, we found that the output voltage is inversely proportional to the distance. At this time, the period was about $35.798{\mu}s$ and equal the oscillator frequency.

• Structural Monitoring and Maintenance
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• 제1권2호
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• pp.183-195
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• 2014

Scour is one of the leading causes of overwater bridge failures worldwide. While monitoring systems have already been implemented or are still being developed, they suffer from limitations such as high costs, inaccuracies, and low reliability, among others. Also, most sensors only measure scour depth at one location and near the pier. Thus, the objective is to design a simple, low cost, scour hole topography monitoring system that could better characterize the entire depth, shape, and size of bridge scour holes. The design is based on burying a robust, waterproofed, piezoelectric sensor strip in the streambed. When scour erodes sediments to expose the sensor, flowing water excites it to cause the generation of time-varying voltage signals. An algorithm then takes the time-domain data and maps it to the frequency-domain for identifying the sensor's resonant frequency, which is used for calculating the exposed sensor length or scour depth. Here, three different sets of tests were conducted to validate this new technique. First, a single sensor was tested in ambient air, and its exposed length was varied. Upon verifying the sensing concept, a waterproofed prototype was buried in soil and tested in a tank filled with water. Sensor performance was characterized as soil was manually eroded away, which simulated various scour depths. The results confirmed that sensor resonant frequencies decreased with increasing scour depths. Finally, a network of 11 sensors was configured to form a distributed monitoring system in the lab. Their exposed lengths were adjusted to simulate scour hole formation and evolution. Results showed promise that the proposed sensing system could be scaled up and used for bridge scour topography monitoring.

• 센서학회지
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• 제25권6호
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• pp.435-439
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• 2016

We report a novel detection technology for glycated hemoglobin (HbA1c) that is measured primarily to identify the three-month average plasma glucose concentration. In enzymatic measuring of glycated hemoglobin, the generated hydrogen peroxide was then used as a reducing agent of gold (III) for the synthesis of gold (0). Gold nanoparticles obtained from this novel approach were measured by optical and piezoelectric methods. In optical method, we have developed polymer based film-type sensor cartridge filled with all the reagents for glycated hemoglobin analysis and the cartridge worked very well having the detection limit of 0.53% of glycated hemoglobin. On the other hand, quartz crystal microbalance (QCM) sensors also have been developed to determine the abilities of surface modified QCM sensors at various levels of the concentration of glycated hemoglobin to bind gold nanoparticles and limit of detection was 0.90%. Finally, despite of relatively lower sensitivities of QCM sensor and film-type optical sensor than well-plate based optical detection, these two sensors were available to measure the glycated hemoglobin level for diabetes patients and normal person.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.690-693
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• 2002

This paper is concerned on method of simultaneous force(stress) and temperature sensing with PVDF film. PVDF film has piezoelectric and pyroelectric properties. Therefore, it senses changes of stress and temperature. But it's output is affected with two properties. Using different medium in a sensing element, this problem is solved. Two structures induce different equations that its solutions are changes of stress and temperature. This method and result is applicable in skin sensor that has complexity of material and structure.

• 센서학회지
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• 제33권1호
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• pp.34-39
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• 2024

Energy harvesting technology that converts the wasted energy resources into electrical energy is emerging as a semipermanent power source for self-powered electronics and wireless low-power sensor systems. Among the various energy conversion techniques, flexible piezoelectric energy harvesters (f-PEHs), using materials with piezoelectric effects, have attracted significant interest because they can harvest a small mechanical energy into electrical signals without constraints of time and space in various environments. In this study, we used a flexible piezoelectric composite film fabricated by dispersing BaHf_xTi_(1-x)O₃ (x = 0, 0.01, 0.05, 0.1) piezoelectric powders inside a polymeric matrix to facilitate f-PEHs. The fabricated f-PEH with optimal Hf contents (x = 0.05) generated a maximum output voltage of 0.95 V and current signal of 130 nA with stable electrical/mechanical disabilities under periodically bending deformations. In addition, we demonstrated a cantilever-type f-PEH and investigated its potential as a sensor by characterizing the output performance under mechanical vibrations at various frequencies. This study provides the breakthrough for realizing self-powered energy harvesting and sensing systems by adopting the lead-free piezoelectric composites under vibrational environments.

• Journal of Electrical Engineering and information Science
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• 제3권2호
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• pp.239-244
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• 1998

Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The microsensors incorporate a 1${\mu}$m-thick sputtered ZnO capacitor supported by a 2${\mu}$m-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80${\times}$80 ${\mu}$m2 designed for use as a miniature microphone exhibits 2.99${\mu}$V/${\mu}$ bar sensitivity at 400Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80${\times}$80 $\mu\textrm{m}$2 is 700 V/W and 6${\times}$108cm$.$ Hz/W at 10Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4${\mu}$m-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4${\mu}$m-gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200oC, respectively. A differential amplifier whose voltage gain in 33.7 dB using 4${\mu}$m gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.219-219
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• 2008

Energy harvesting from the environment has been of great interest as a standalone power source of wireless sensor nodes for ubiquitous sensor networks (USN). There are several power generating methods such as thermal gradients, solar cell, energy produced by human action, mechanical vibration energy, and so on. Most of all, mechanical vibration is easily accessible and has no limitation of weather and environment of outdoor or indoor. In particular, the piezoelectric energy harvesting from ambient vibration sources has attracted attention because it has a relative high power density comparing with other energy scavenging methods. Through recent advances in low power consumption RF transmitters and sensors, it is possible to adopt a micro-power energy harvesting system realized by MEMS technology for the system-on-chip. However, the MEMS energy harvesting system hassome drawbacks such as a high natural frequency over 300 Hz and a small power generation due to a small dimension. To overcome these limitations, we devised a novel power generator with a spiral spring structure. In this case, the energy harvester has a lower natural frequency under 200 Hz than a normal cantilever structure. Moreover, it has higher an energy conversion efficient because shear mode ($d_{15}$) is much larger than 33 mode ($d_{33}$) and the energy conversion efficiency is proportional to the piezoelectric constant (d). We expect the spiral type MEMS power generator would be a good candidate as a standalone power generator for USN.