• 제목/요약/키워드: Photon cross-section

검색결과 29건 처리시간 0.035초

Evaluation of photon radiation attenuation and buildup factors for energy absorption and exposure in some soils using EPICS2017 library

  • Hila, F.C.;Javier-Hila, A.M.V.;Sayyed, M.I.;Asuncion-Astronomo, A.;Dicen, G.P.;Jecong, J.F.M.;Guillermo, N.R.D.;Amorsolo, A.V. Jr.
    • Nuclear Engineering and Technology
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    • 제53권11호
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    • pp.3808-3815
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    • 2021
  • In this paper, the EPICS2017 photoatomic database was used to evaluate the photon mass attenuation coefficients and buildup factors of soils collected at different depths in the Philippine islands. The extraction and interpolation of the library was accomplished at the recommended linear-linear scales to obtain the incoherent and total cross section and mass attenuation coefficient. The buildup factors were evaluated using the G-P fitting method in ANSI/ANS-6.4.3. An agreement was achieved between XCOM, MCNP5, and EPICS2017 for the calculated mass attenuation coefficient values. The buildup factors were reported at several penetration depths within the standard energy grid. The highest values of both buildup factor classifications were found in the energy range between 100 and 400 keV where incoherent scattering interaction probabilities are predominant, and least at the region of predominant photoionization events. The buildup factors were examined as a function of different soil silica contents. The soil samples with larger silica concentrations were found to have higher buildup factor values and hence lower shielding characteristics, while conversely, those with the least silica contents have increased shielding characteristics brought by the increased proportions of the abundant heavier oxides.

Investigation of photon, neutron and proton shielding features of H3BO3-ZnO-Na2O-BaO glass system

  • Mhareb, M.H.A.;Alajerami, Y.S.M.;Dwaikat, Nidal;Al-Buriahi, M.S.;Alqahtani, Muna;Alshahri, Fatimh;Saleh, Noha;Alonizan, N.;Saleh, M.A.;Sayyed, M.I.
    • Nuclear Engineering and Technology
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    • 제53권3호
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    • pp.949-959
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    • 2021
  • The current study aims to explore the shielding properties of multi-component borate-based glass series. Seven glass-samples with composition of (80-y)H3BO3-10ZnO-10Na2O-yBaO where (y = 0, 5, 10, 15, 20, 25 and 30 mol.%) were synthesized by melt-quench method. Various shielding features for photons, neutrons, and protons were determined for all prepared samples. XCOM, Phy-X program, and SRIM code were performed to determine and explain several shielding properties such as equivalent atomic number, exposure build-up factor, specific gamma-ray constants, effective removal cross-section (ΣR), neutron scattering and absorption, Mass Stopping Power (MSP) and projected range. The energy ranges for photons and protons were 0.015-15 MeV and 0.01-10 MeV, respectively. The mass attenuation coefficient (μ/ρ) was also determined experimentally by utilizing two radioactive sources (166Ho and 137Cs). Consistent results were obtained between experimental and XCOM values in determining μ/ρ of the new glasses. The addition of BaO to the glass matrix led to enhance the μ/ρ and specific gamma-ray constants of glasses. Whereas the remarkable reductions in ΣR, MSP, and projected range values were reported with increasing BaO concentrations. The acquired results nominate the use of these glasses in different radiation shielding purposes.

The influence of MgO on the radiation protection and mechanical properties of tellurite glasses

  • Hanfi, M.Y.;Sayyed, M.I.;Lacomme, E.;Akkurt, I.;Mahmoud, K.A.
    • Nuclear Engineering and Technology
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    • 제53권6호
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    • pp.2000-2010
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    • 2021
  • Mechanical moduli, such as Young's modulus (E), Bulks modulus (B), Shear modulus (S), longitudinal modulus (L), Poisson's ratio (σ) and micro Hardness (H) were theoretically calculated for (100-x)TeO2+x MgO glasses, where x = 10, 20, 30, 40 and 45 mol%, based on the Makishima-Mackenzie model. The estimated results showed that the mechanical moduli and the microhardness of the glasses were improved with the increase of the MgO contents in the TM glasses, while Poisson's ratio decreased with the increase in MgO content. Moreover, the radiation shielding capacity was evaluated for the studied TM glasses. Thus, the linear attenuation coefficient (LAC), mass attenuation coefficient (MAC), transmission factor (TF) and half-value thickness (𝚫0.5) were simulated for gamma photon energies between 0.344 and 1.406 MeV. The simulated results showed that glass TM10 with 10 mol % MgO possess the highest LAC and varied in the range between 0.259 and 0.711 cm-1, while TM45 glass with 45 mol % MgO possess the lowest LAC and vary in the range between 0.223 and 0.587 cm-1 at gamma photon energies between 0.344 and 1.406 MeV. Furthermore, the BXCOM program was applied to calculate the effective atomic number (Zeff), equivalent atomic number (Zeq) and buildup factors (EBF and EABF) of the glasses. The effective removal cross-section for the fast neutrons (ERCSFN, ∑R) was also calculated theoretically. The received data depicts that the lowest ∑R was achieved for TM10 glasses, where ∑R = 0.0193 cm2 g-1, while TM45 possesses the highest ERCSFN where ∑R = 0.0215 cm2 g-1.

Evaluation of gamma-ray and neutron attenuation properties of some polymers

  • Kacal, M.R.;Akman, F.;Sayyed, M.I.;Akman, F.
    • Nuclear Engineering and Technology
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    • 제51권3호
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    • pp.818-824
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    • 2019
  • In the present work, we determined the gamma-ray attenuation characteristics of eight different polymers(Polyamide (Nylon 6) (PA-6), polyacrylonitrile (PAN), polyvinylidenechloride (PVDC), polyaniline (PANI), polyethyleneterephthalate (PET), polyphenylenesulfide (PPS), polypyrrole (PPy) and polytetrafluoroethylene (PTFE)) using transmission geometry utilizing the high resolution HPGe detector and different radioactive sources in the energy range 81-1333 keV. The experimental linear attenuation coefficient values are compared with theoretical data (WinXCOM data). The linear attenuation coefficient of all polymers reduced quickly with the increase in energy, at the beginning, while decrease more slowly in the region from 267 keV to 835 keV. The effective atomic number of PVDC and PTFE are comparatively higher than the $Z_{eff}$ of the remaining polymers, while PA-6 possesses the lowest effective atomic number. The half value layer results showed that PTFE ($C_2F_4$, highest density) is more effective to attenuate the gamma photons. Also, the theoretical results of macroscopic effective removal cross section for fast neutrons ($\sum_{R}$) were computed to investigate the neutron attenuation characteristics. It is found that the $\sum_{R}$ values of the eight investigated polymers are close and ranged from $0.07058cm^{-1}$ for PVDC to $0.11510cm^{-1}$ for PA-6.

옥수수의 파종시기 및 질소수준별 광화학적 반응 해석 (Photochemical Response Analysis on Different Seeding Date and Nitrogen (N) level for Maize (Zea mays L.))

  • 박소현;유성영;이민주;박종용;송기태;김태완;이병무
    • 한국작물학회지
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    • 제60권1호
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    • pp.1-7
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    • 2015
  • 본 연구는 파종시기와 질소시비 수준에 대한 옥수수의 광화학적 반응을 분석하여 광생리적 특성을 해석하였다. 1. 5월 22일 파종시 질소 함량이 증가함에 따라 생육후기까지 엽록소 형광량 또한 증가하여 질소 배량처리에서 광이용효율이 더 높은 것으로 확인되었다. 2. 생육초기의 형광량이 가장 높았으며, 이후 모든 처리구에서 엽록소 형광량이 50% 가량 감소하여 전자전달을 위한 광화학 반응이 크게 감소했음을 알 수 있었다. 3. 질소 반량구에서 활성화된 RC (RC/ABS)가 감소하며 13% 이상의 에너지가 손실되었으며, 결국 전자전달시 에너지 전환효율(PI, DF 등)이 감소해 광이용효율이 낮았다. 4. 배량 처리구는 생육후기로 갈수록 전자전달 효율(ET2o/CS) 및 단면당 활성화된 RC(RC/CS) 등 광이용 효율이 대조구 대비 크게 증가하여 광합성기구 사이의 전자전달이 잘 이루어지는 것으로 확인되었다.

High-k ZrO2 Enhanced Localized Surface Plasmon Resonance for Application to Thin Film Silicon Solar Cells

  • Li, Hua-Min;Zang, Gang;Yang, Cheng;Lim, Yeong-Dae;Shen, Tian-Zi;Yoo, Won-Jong;Park, Young-Jun;Lim, Jong-Min
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.276-276
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    • 2010
  • Localized surface plasmon resonance (LSPR) has been explored recently as a promising approach to increase energy conversion efficiency in photovoltaic devices, particularly for thin film hydrogenated amorphous silicon (a-Si:H) solar cells. The LSPR is frequently excited via an electromagnetic (EM) radiation in proximate metallic nanostructures and its primary con sequences are selective photon extinction and local EM enhancement which gives rise to improved photogeneration of electron-hole (e-h) pairs, and consequently increases photocurrent. In this work, high-dielectric-constant (k) $ZrO_2$ (refractive index n=2.22, dielectric constant $\varepsilon=4.93$ at the wavelength of 550 nm) is proposed as spacing layer to enhance the LSPR for application to the thin film silicon solar cells. Compared to excitation of the LSPR using $SiO_2$ (n=1.46, $\varepsilon=2.13$ at the wavelength of 546.1 nm) spacing layer with Au nanoparticles of the radius of 45nm, that using $ZrO_2$ dielectric shows the advantages of(i) ~2.5 times greater polarizability, (ii) ~3.5 times larger scattering cross-section and ~1.5 times larger absorption cross-section, (iii) 4.5% higher transmission coefficient of the same thickness and (iv) 7.8% greater transmitted electric filed intensity at the same depth. All those results are calculated by Mie theory and Fresnel equations, and simulated by finite-difference time-domain (FDTD) calculations with proper boundary conditions. Red-shifting of the LSPR wavelength using high-k $ZrO_2$ dielectric is also observed according to location of the peak and this is consistent with the other's report. Finally, our experimental results show that variation of short-circuit current density ($J_{sc}$) of the LSPR enhanced a-Si:H solar cell by using the $ZrO_2$ spacing layer is 45.4% higher than that using the $SiO_2$ spacing layer, supporting our calculation and theory.

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Optically Controlled Silicon MESFET Modeling Considering Diffusion Process

  • Chattopadhyay, S.N.;Motoyama, N.;Rudra, A.;Sharma, A.;Sriram, S.;Overton, C.B.;Pandey, P.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제7권3호
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    • pp.196-208
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    • 2007
  • An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

MIRD 인형팬텀의 넓고 평행한 감마선빔에 대한 선량 환산계수 계산 (Calculation of Dose Conversion Coefficients in the Anthropomorphic MIRD Phantom in Broad Unidirectional Beams of Monoenergetic Photons)

  • 장재권;이재기
    • Journal of Radiation Protection and Research
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    • 제22권1호
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    • pp.47-58
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    • 1997
  • MCNP4A 코드를 이용하여 MIRD 인형팬텀의 정면과 후방에서 입사하는 넓고 평행한 감마선빔에 대한 단위 공기커마당 유효선량 환산계수와 단위 플르언스당 장기의 등가선량을 계산하였다. 본 연구에서 고려한 감마선은 0.03-10 MeV 에너지 구간에서 20개의 단일에너지에 대해 수행되었다. 환산계수의 계산결과를 ICRP/ICRU의 연구결과 발표예정 출판물에 주어진 해당되는 값과 비교한 결과 편차 10%이내에서 일치하고 있다. 결과의 차이가 발생한 이유는 MIRD 팬텀과 ADAM/EVE 팬텀의 기하학적 차이가 주원인이며 또한 계산에 사용된 전산코드와 단면적 차이 등으로 판단된다. 특정 식도 모델을 사용한 결과로부터 얻어진 유효선량과 흉선과 췌장에 대한 등가선량을 채택함으로써 얻어지는 유효선량은 약간(최고 5%)의 차이를 보인다. 기타장기로부터 상부대장을 제외했을 때 본 연구에서 다루었던 감마선 선량학적 측면의 경우에서는 중요하지 않은 것으로 나타났다.

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Photochemical Response Analysis on Drought Stress for Red Pepper (Capsiumannuum L.)

  • Yoo, Sung-Yung;Lee, Yong-Ho;Park, So-Hyun;Choi, Kyong-Mi;Park, June-Young;Kim, A-Ram;Hwang, Su-Min;Lee, Min-Ju;Ko, Tae-Seok;Kim, Tae-Wan
    • 한국토양비료학회지
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    • 제46권6호
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    • pp.659-664
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    • 2013
  • The aim of this study is to determine the drought stress index through photochemical analysis in red pepper (Capsiumannuum L.). The photochemical interpretation was performed in the basis of the relation between Kautsky effect and Photosystem II (PSII) following the measurement of chlorophyll, pheophytin contents, and $CO_2$ assimilation in drought stressed 5-week-old red pepper plants. The $CO_2$ assimilation rate was severely lowered with almost 77% reduction of chlorophyll and pheophytin contents at four days after non-irrigation. It was clearly observed that the chlorophyll fluorescence intensity rose from a minimum level (the O level), in less than one second, to a maximum level (the P-level) via two intermediate steps labeled J and I (OJIP process). Drought factor index (DFI) was also calculated using measured OJIP parameters. The DFI was -0.22, meaning not only the initial inhibition of PSII but also sequential inhibition of PSI. In real, most of all photochemical parameters such as quantum yield of the electron transport flux from Quinone A ($Q_A$) to Quinone B ($Q_B$), quantum yield of the electron transport flux until the PSI electron acceptors, quantum yield of the electron transport flux until the PSI electron acceptors, average absorbed photon flux per PSII reaction center, and electron transport flux until PSI acceptors per cross section were profoundly reduced except number of QA reducing reaction centers (RCs) per PSII antenna chlorophyll (RC/ABS). It was illuminated that at least 6 parameters related with quantum yield/efficiency and specific energy fluxes (per active PSII RC) could be applied to be used as the drought stress index. Furthermore, in the combination of parameters, driving forces (DF) for photochemical activity could be deduced from the performance index (PI) for energy conservation from photons absorbed by PSII antenna until the reduction of PSI acceptors. In conclusion, photochemical responses and their related parameters can be used as physiological DFI.