• Journal of Sensor Science and Technology
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• v.18 no.1
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• pp.77-85
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• 2009

We propose a new image pixel architecture which has OFD(Over Flow Device) node by improving conventional 3TR pixel structure. Newly designed pixel consists of photo diode which is verified with HSPICE simulation, PMOS reset transistor, several NMOS and several PMOS transistors. Photodiode signals from each PMOS and NMOS are detected by Reset PMOS. These output signals give enough chances to detect wide operation coverage because OFD node has overflow photocurrent. According to various light intensity, we analyzed characteristic of the output voltage with a SPICE tool. Proposed pixel output has specific value which can detect possible from $0.1{\mu}W/cm^2$ to $10W/cm^2$ light intensity. It has wide-dynamic range of 160 dB.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.9
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• pp.3517-3523
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• 2010

Single exposure dual X-ray imaging can be used to separate soft and dense-material images for medical and industrial applications. This study keep focusing baggage inspection system(BIS) specifically. New detector modules for single exposure dual X-ray imaging are consisted of low energy detector (LED) and high energy detector (HED). First, the optimized thickness of copper filter coupled HED to separate low energy and high energy was simulated by the given X-ray energy (140 kVp, 1 mA) using Monte Carlo simulation codes, MCNPX. So as a result of simulation, the copper filter thickness is 0.7 mm. For the design of PIN photodiode, ATLAS device simulation tool was used. 16 channels PIN photodiode of 1.5 mm ${\times}$ 3.2 mm for Dual X-ray imaging detector was fabricated in the process of ETRI. And its dark current and quantum efficiency, terminal capacitance were measured. It was proven that the Lanex Fast B coupled HED were a sufficient candidate to replace the CsI(Tl) commerced in dual X-ray system, since these give a strong signal, overcoming system noise. Finally dual X-ray image was acquired through correction of the LED X-ray Image and the HED X-ray Image.

• The Journal of the Korea institute of electronic communication sciences
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• v.11 no.12
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• pp.1219-1224
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• 2016

The current wireless power charge technologies are based on induction coupling, magnetic resonant coupling, electromagnetic wave, etc. However, the current wireless power charge technologies has several disadvantages including short transfer range, electromagnetic interference, etc. In this paper, we investigate and demonstrate a laser wireless power charge technology. A laser source is used in the transmitter to convert from electric power to optical power and a solar cell or a photodiode is used in the receiver to convert from optical power to electric power. The laser wireless power charge technology may be the most efficient wireless power charge technology in the long distance over than 10 meters. Our experimental results show a transfer efficiency of 2.15% at the 70-m long distance with a 100 mW laser transmitter and a photodiode receiver.

• Journal of Sensor Science and Technology
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• v.23 no.5
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• pp.332-336
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• 2014

In this paper, we propose a complementary metal oxide semiconductor (CMOS) binary image sensor with a gate/body-tied (GBT) PMOSFET-type photodetector for high-speed operation. The GBT photodetector of an active pixel sensor (APS) consists of a floating gate ($n^+$-polysilicon) tied to the body (n-well) of the PMOSFET. The p-n junction photodiode that is used in a conventional APS has a good dynamic range but low photosensitivity. On the other hand, a high-gain GBT photodetector has a high level of photosensitivity but a narrow dynamic range. In addition, the pixel size of the GBT photodetector APS is less than that of the conventional photodiode APS because of its use of a PMOSFET-type photodetector, enabling increased image resolution. A CMOS binary image sensor can be designed with simple circuits, as a complex analog to digital converter (ADC) is not required for binary processing. Because of this feature, the binary image sensor has low power consumption and high speed, with the ability to switch back and forth between a binary mode and an analog mode. The proposed CMOS binary image sensor was simulated and designed using a standard CMOS $0.18{\mu}m$ process.

• Journal of the Korean Society for Marine Environment & Energy
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• v.16 no.4
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• pp.263-267
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• 2013

In this research, a novel optical measuring methodology for the measurement of oil thickness in seawater is suggested by evaluating the light absorption which is occurred in the process of penetrating through oil layer on seawater. Laser having monochromatic wave is used as a light source and photodiode which can convert the intensity of the light into an electrical signal is applied to measure the intensity of the penetrating light through the oil-water mixtures. In the experiment, bunker C and lubricating oil are used, and three different lasers having different wavelengths are applied and compared for the selection of an optimal light source. As a result, it is observed that in the case of blue laser, the intensity of the light on the optical sensor decreases with an increase in the oil thickness. Through this relation, both the presence of oil and the thickness of oil can be determined.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.1
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• pp.10-18
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• 2017

In this paper, we designed and implemented a visible light identification(VLID) system consisting of a VLID reader and a tag which backscatters incident lights from the reader. A VLID tag sends its ID to the reader by switching an LCD shutter which is located on its surface. The VLID reader consists of six LEDs and a photodiode(PD). The LEDs emit visible light and a PD located in a center position of LEDs receives backscattered light from the VLID tag. A microcontroller and a commercial liquid crystal display(LCD) shutter for 3D-TV glasses are used to implement a VLID tag. Experiments were conducted to confirm VLID system performance. We successfully demonstrated experiments to send NRZ-OOK signal of 100 bps over a distance of 35 cm at daytime. Also, we suggested the theoretical maximum transmission rate and the various methods to enhance the separation distance between a VLID reader and a tag.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.193-197
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• 2004

The organic light emitting diode (OLED) is proposed as the novel source in the microchip because it has ideal merits (various wavelengths, thin-film structure and overall emitting) for the integration. In this paper, we fabricated the finger-type pin photodiodes for fluorescence detection and the advanced microchip with OLED integrated pn the microchannel. The finger-type in the diode design extended the depletion region and reduced the internal resistance about 31.2% than rectangular-type. The photodiodes had a 100pA leakage current and a 8720 sensitivity $(I_{Light}/I_{Dark})$ at -1 V bias. The interference filter with 32 layers ($SiO_2$, $TiO_2$) was directly deposited on the photodiode. The OLED was fabricated on the ITO coated glass and was bonded with LOC. The application of thin-film OLED increased the excitation efficiency and simplified the integration process extremely. The prototype device of this application had a superior sensitivity of 100nM-LOD in the fluorescence detection.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.8 s.338
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• pp.53-60
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• 2005

Recently, sub-micron CMOS technologies have taken the place of III-V materials in a number of areas in integrated circuit designs, in particular even for the applications of gjgabit optical communication applications due to its low cost, high integration level, low power dissipation, and short turn-around time characteristics. In this paper, a four-channel transimpedance amplifier (TIA) array is realized in a standard 0.35mm CMOS technology Each channel includes an optical PIN photodiode and a TIA incorporating the fully differential regulated cascode (RGC) input configuration to achieve effectively enhanced transconductance(gm) and also exploiting the inductive peaking technique to extend the bandwidth. Post-layout simulations show that each TIA demonstrates the mid-band transimpedance gain of 59.3dBW, the -3dB bandwidth of 2.45GHz for 0.5pF photodiode capacitance, and the average noise current spectral density of 18.4pA/sqrt(Hz). The TIA array dissipates 92mw p in total from a single 3.3V supply The four-channel RGC TIA array is suitable for low-power, high-speed optical interconnect applications.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.468-470
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• 2002

We have designed X-ray detection system and multi-channel data acquisition system for Spiral CT application. X-ray detection system consists of scintillator and photodiode. Scintillator converts X-ray into visible light. Photodiode converts visible light into electrical signal. The multi-channel data acquisition system consists of analog, digital, master and backplane board. Analog board detects electrical signal and amplifies signal by 140dB. Digital board consists of MUX(Multiplex) which routes multi-channel analog signal to preamplifier, and ADC(Analog to Digital Converter) which converts analog signal into digital signal. Master board supplies the synchronized clock and transmits the digital data to image reconstructor. Backplane provides electrical power, analog output and clock signal. The system converts the projected X-ray signal over the detector array with large gain, samples the data in each channel sequentially, and the sampled data are transmitted to host computer in a given time frame. To meet the timing limitation, this system is very flexible since it is implemented by FPGA(Field Programmable Gate Array). This system must have a high-speed operation with low noise and high SNR(signal to noise ratio), wide dynamic range to get a high resolution image.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.2
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• pp.55-60
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• 2007

This paper presents a compact double resolution scheme for the optical angle sensor based on 1-dimensional CMOS photodiode pixel array. All the pixels are divided into the even pixel and the odd pixel groups. The winner take all circuit is provided for each group. The proposed interpolation scheme increases the resolution by 2 from the winner addresses and winner values. The interpolation scheme can be implemented without any additional pixels or winner take all circuits and require only a comparator and a XOR gate. The proposed pixel array chip that has 336 photodiode pixels with $5.6{\mu}m$ pitch was fabricated with $0.35{\mu}m$ CMOS process and was assembled with a $50{\mu}m$ slit to form an angle sensor. The measured resolution is $0.1{\circ}$ with the proposed interpolation. The chip consumes 35mW and provides 8k samples per second.