• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.55 no.1
• /
• pp.16-19
• /
• 2006

The characteristic of negative differential resistance(NDR) is decreased current when the applied voltage is increased. The NDR is potentially very useful in molecular electronics device schemes. Here, we investigated the NDR characteristic of self-assembled 4,4'-di(ethynylphenyl)-2'-nitro-1-benzenethiolate, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto $pre-treatment(H_2SO_4:H_2O_2=3:1)$ Si. The Au substrate was exposed to a 1 mM/1 solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a 0.1 ${\mu}M/l$ solution of 4.4'-di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_2Cl_2,$ and finally blown dry with N_2. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -2 V to +2 V with 298 K temperature. The vacuum condition was $6{\time}10^{-8}$ Torr. As a result, we found the NDR voltage of the 4,4'-di(ethynylphenyl)-2'-nitro-1-benzenethiolate were $-1.61{\pm}0.26$ V(negative region) and $1.84{\pm}0.33$ V(positive region). respectively.

• Journal of Korean Society of Environmental Engineers
• /
• v.31 no.1
• /
• pp.9-14
• /
• 2009

In this research, a polyester manufacturing company (i.e. K Co.) in Gumi, South Korea was investigated regarding the release of high concentrations of 1,4-dioxane(about 600 mg/L) and whether treatment prior to release should occur to meet with the level of the regulation standard (e.g., 5 mg/L in 2011). The pilot-scale (reactor volume, 10 $m^3$) treatment system using Photo-Fenton Oxidation was able to remove approximately 90% of 1,4-dioxane under the conditions that concentrations of 2,800 ppm $H_2O_2$ and 1,400 ppm $FeSO_4$ were maintained along with 10 UV-C lamps (240 ${\mu}W/cm^2$) illuminated during aeration. However, the effluent concentration of 1,4-dioxane was still high at about 60 mg/L. Thus, further investigation is needed to see whether the bench scale (reactor volume, 8.9 L) of activated sludge could facilitate the decomposition of 1,4-dioxane. As a result, 1,4-dioxane in the effluent has been decreased as low as about 2~3 mg/L. Consequently, Photo-Fenton Oxidation coupled with activated sludge process can make it possible to efficiently decompose 1,4-dioxane to keep up with that of the regulation standard.

• Applied Chemistry for Engineering
• /
• v.16 no.3
• /
• pp.328-336
• /
• 2005

In order to remove the NO contained in exhaust gas by the non-selective catalyst reduction method, the catalysts were prepared by varing the loading amount of Ag and V into ${\gamma}-Al_2O_3$. The conversion of $NO_x$ using the prepared catalysts was studied by varying the temperatures, $O_2$ concentrations and $SO_2$ concentrations using. The influence of the catalyst structure on $NO_x$ conversion was studied through the analysis of the physical properties of the prepared catalysts. In the case of $AgV/{\gamma}-Al_2O_3$ catalyst, the $NO_x$ conversion was lower than that of $Ag/{\gamma}-Al_2O_3$ at higher temperatures but higher than that of $Ag/{\gamma}-Al_2O_3$ at lower temperatures. Even though $SO_2$ was contained in the reaction gas, the $NO_x$ conversion did not decrease. Based on the analysis including XRD, XPS, TPR, and UV-Vis DRS before and after the experiments, the experimental results were examined. The results indicated that, $NO_x$ conversion decreased at higher temperatures since Ag oxide could not be maintained well due to the addition of V, whereas it increased at temperatures lower than $300^{\circ}C$ due to the catalytic action of V.

• Korean Journal of Crystallography
• /
• v.12 no.4
• /
• pp.197-206
• /
• 2001

A stoichiometric mixture of evaporating materials for AgInS₂ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films. AgInS₂ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE)system. The source and substrate temperatures were 680℃ and 410℃, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS₂ single crystal thin film mea-sured from Hall effect by van der Pauw method are 9.35×10/sup 16/㎤ and 294㎠/V·s at 293K respectively. The temperature dependence of the energy band gap of the AgInS₂ obtained from the absorption spectra was well described by the Varshni's relation , E/sub g/(T)=2.1365eV-(9.89×10/sup-3/eV/K/)T²(T+2930K). The crystal field and the spin-orbit splitting energies for the valence band of the AgInS₂ have been estimated to be 0.1541eV and 0.0129 eV, respectively, by means of the photocur-rent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the Γ/sub 5/ states of the valence band of the AgInS₂ /GaAs epilayer. The three photo-current peaks ovserved at 10K are ascribed to the A₁-, B-₁and C₁-exction peaks for n=1.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.7 no.3
• /
• pp.196-208
• /
• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• Korean Journal of Plant Resources
• /
• v.18 no.3
• /
• pp.441-449
• /
• 2005

Photo system II (PSII) is one of the two photosynthetic reaction centers in the chloroplast of higher plants. The chlorophyll a/b-light harvesting complex serves primarily as an antenna for PSII. We isolated a cDNA that encodes a chlorophyll a/b-binding protein (Cab) from Panax ginseng. The small subunit consists of 935 nucleotides long and has an open reading frame of 795 bp with the deduced amino acid of 265 residues (pI 5.63), 28.6 kDa. The deduced amino acid sequence matched to the previously reported Cab genes. Their degree of amino acid identity ranged from 68 to $92\%$. Phylogenetic analysis based on the amino acid residues was showed that the ginseng Cab gene was grouped with P. persica (AAC34983), A. thaliana (AAD28771), G. hirsutum (CAA38025), G. max (AAL29886), and V. radiate (AAF89205).

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.174-174
• /
• 2010

Gallium Nitride(GaN) attracts great attention due to their wide band gap energy (3.4eV), high thermal stability to the solid state lighting devices like LED, Laser diode, UV photo detector, spintronic devices, solar cells, sensors etc. Recently, researchers are interested in synthesis of polycrystalline and amorphous GaN which has also attracted towards optoelectronic device applications significantly. One of the alternatives to deposit GaN at low temperature is to use Single Source Molecular Percursor (SSP) which provides preformed Ga-N bonding. Moreover, our group succeeds in hybridization of SSP synthesized GaN with Single wall carbon nanotube which could be applicable in field emitting devices, hybrid LEDs and sensors. In this work, the GaN thin films were deposited on c-axis oriented sapphire substrate by MBE (Molecular Beam Epitaxy) using novel single source precursor of dimethyl gallium azido-tert-butylamine($Me_2Ga(N_3)NH_2C(CH_3)_3$) with additional source of ammonia. The surface morphology, structural and optical properties of GaN thin films were analyzed for the deposition in the temperature range of $600^{\circ}C$ to $750^{\circ}C$. Electrical properties of deposited thin films were carried out by four point probe technique and home made Hall effect measurement. The effect of ammonia on the crystallinity, microstructure and optical properties of as-deposited thin films are discussed briefly. The crystalline quality of GaN thin film was improved with substrate temperature as indicated by XRD rocking curve measurement. Photoluminescence measurement shows broad emission around 350nm-650nm which could be related to impurities or defects.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.31A no.9
• /
• pp.96-103
• /
• 1994

The GaAs epilayer was grown at low temperature (LT. 250.deg. C) by molecular beam epitaxy. The properties of the LTT GaAs, before and after Rapid Thermal Annealing(RTA), were analyzed by Reflection of High Energy Electron Diffraction (RHEED), Double Crystal X-ray(DCX), Raman spectroscopy, PL and Photo-Induced Current Transient Spectroscopy (PICTS). The LT GaAs before RTA, was analyzed by RHEED and DCX, with a result of an improved surface morphology under a relatively As-rich(As/Ga ratio :28) condition, and of an increased lattics parameter of 1.1 1.7% in comparison with a GaAs substrate. However DCX and Raman spectroscopy revealed that the expanded lattics parameter and the crystallinity of LT GaAs could be recovered after RTA. On the other hand, PL spectra indicated that LT GaAs after RTA showed low optical sensitivity unlike High Temperature(HT) GaAs, and that its surface morphology and crystallinity were corresponded with those of HT GaAs. Finally PICTS spectra proved the fact that low sensitivity of LT GaAs was due to the deep level defects (Ec-0.85eV) which were strogly formed by raising RTA temperature to 750.deg. C.

• Korean Journal of Materials Research
• /
• v.30 no.6
• /
• pp.279-284
• /
• 2020

In this work, a carbon-doped carbon nitride photocatalyst is successfully synthesized through a simple centrifugal spinning method after heat treatment. The morphology and properties of the prepared photo catalyst are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), UV-vis spectrophotometer (UV-vis), and specific surface area. The results show that the band gap of the prepared sample, g-CN-10 is 2.1 eV, is significantly lower than that of pure carbon nitride, 2.7 eV. As the amount of cotton candy increased, the absorption capacity of the prepared catalyst for visible light is significantly enhanced. In addition, the degradation efficiency of Rhodamine B (RhB) by sample g-CN-10 is 98.8 % over 2 h, which is twice that value of pure carbon nitride. The enhancement of photocatalytic ability is attributed to the increase of specific surface area after the carbon doping modifies carbon nitride. A possible photocatalytic degradation mechanism of carbon-doped carbon nitride is also suggested.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.350-350
• /
• 2011

The spin structure of Fe over layers on Cu (001), especially in region II is one of the unsolved problem for many years. We study the out - of - plane (OP) Fermi surfaces (FSs) of 7 monolayer Fe/Cu (001) films using angle resolved photo emission spectroscopy (ARPES). Ultrathin Fe was grown on Cu (001) substrate at room temperature and the experimental measurements were carried out at room temperature and low temperature. Fermi surfaces measured about $\frac{1}{4}$ of the Brillouin Zone (BZ) using photon energies ranging from 170 eV to 280 eV. Our results confirmed that ferromagnetic signal at 7 ML Fe on Cu (001) is nearly zero. These results are consistent with our recent x-ray magnetic circular dichroism (XMCD) and surface magneto - optic Kerr effect (SMOKE) experiments. Based on our observations we have made a simple model of this system, which explains all the experimental results.