• Journal of the Korean Ceramic Society
• /
• v.34 no.2
• /
• pp.171-174
• /
• 1997

It was experimentally identified, for the first time, that oxygen phonons play an important role in the low temperature degradation(tetragonallongrightarrowmonoclinic phase transformation) of yttria stabilized tetragonal zir-conia polycrystals (Y-TZP). The degradation accompanied by immersing the samples in the boiling water were markedly reduced by substituting of 18O for 16O in Y-TZP. This was attributed to the heavier mass of 18O which leads to the smaller probability to find oxygen atoms beyond certain critical displacements.

• Journal of IKEEE
• /
• v.22 no.2
• /
• pp.446-454
• /
• 2018

In this work, we summarize the calculation processes of obtaining a scattering factor using with the equilibrium average projection scheme (EAPS), with moderately weak coupling (MWC) interaction, and obtain the line-shape formula of an electron-deformation phonon interacting system interested in the confinement of electrons by squarwell confinement potentials in quantum two dimensional system.. Through the numerical analysis, we analysis the magnetic dependence of absorption power, P(B) in several temperature and frequency difference dependence of absorption power $P({\Delta}{\omega})$, in several external field, where ${\Delta}{\omega}={\omega}-{\omega}_0$ and ${\omega}({\omega}_0)$ is the angular frequency (the cyclotron resonance frequency). The result of equilibrium average projection scheme (EAPS) in SER-MWC explains the properties of quantum transition quite well.

• The Transactions of the Korean Institute of Electrical Engineers P
• /
• v.67 no.3
• /
• pp.149-154
• /
• 2018

We consider the system is subject to the linearly polarized oscillatory external field. We study the optical quantum transition Line shapes(QTLS) which show the absorption power and the quantum transition line widths(QTLW) of electron-piezoelectric phonon interacting system. We analyze the magnetic field dependence of the QTLS and the QTLW in various cases. In order to analysis the quantum transition, we compare the magnetic field dependence of the QTLW and the QTLS of two transition process, the intra-Landau level transition process and the inter-Landau level transition process.

• The Korean Journal of Ceramics
• /
• v.3 no.1
• /
• pp.29-33
• /
• 1997

Four diamond films were deposited by the microwave plasma assisted chemical vapor deposition method varying CH4 concentration from 2.5 to 10% in the feeding gases. Thermal conductivity was measured on these free standing films by the steady state method from 80 K to 400K. They showed higher thermal conductivity as the film deposited with lower methane concentration. One exception, 7.79% methane concentration deposited film, was observed to be the highest thermal conductivity. Phonon scattering processes were considered to analyze the thermal conductivity with the full Callaway model. The grain size and the concentration of the extended and the point defects were used as the fitting parameters. Microstructure of diamond films was investigated with the scanning electron microscopy and Raman spectroscopy.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2018.10a
• /
• pp.512-513
• /
• 2018

Trap-assisted-tunneling (TAT) degrades subthreshold slope of real-world tunneling field-effect-transistors (TFET) and it should be considered in the simulation. However, its mechanism is not very well understood in line tunneling type L-shaped TFET (LTFET). This study investigates TAT mechanism in LTFETs using dynamic nonlcoal Schenk model. Both phonon assisted and direct band to trap tunneling events are considered in this study.

• Proceedings of the KSME Conference
• /
• 2004.04a
• /
• pp.1376-1381
• /
• 2004

Understanding the thermal conductivity and heat transfer processes in superlattice structures is critical for the development of thermoelectric materials and optoelectronic devices based on quantum structures. $Chen^{(1)}$ developed ballistic diffusive equation(BDE) for alternatives of the Boltzmann equation that can be applied to the complex geometrical situation. In this study, a simulation code based on BDE is developed and applied to the 1-dimensional transient heat conduction across a thin film and transient 2-dimensional heat conduction across the film with heater. The obtained results are compared to the results of the $Chen^{(1)}$ and Yang and $Chen^{(1)}$. Finally, steady 2-dimensional heat conduction in the quantum dot superlattice are solved to obtain the equivalent thermal conductivity of the lattice and also compared with the experimental data from $Borca-Tasciuc^{(2)}$.

• Journal of the Korean Vacuum Society
• /
• v.12 no.S1
• /
• pp.36-39
• /
• 2003

Field-domain dynamics and current self-oscillations are theoretically studied in quantum-well (QW) negative-effective-mass (NEM) $p^{+}pp^{+}$ diodes when the electric field is applied along the direction of the well. The origin of current self-oscillations is the formation and traveling of electric-field domains in the p-base. We have accurately considered the scattering contributions from carrier-impurity, carrier-acoustic phonon, and carrier-optic phonon. It's indicated that, both the applied bias and the doping concentration largely influence the current patterns and self-oscillating frequencies, which lie in the THz range for the NEM $p^{+}pp^{+}$ diode with a submicrometer p-base. The complicated field-domain dynamics is presented with the applied bias as the controlling parameter.

• Nuclear Engineering and Technology
• /
• v.50 no.5
• /
• pp.731-737
• /
• 2018

In this research paper, the thermal transport in thorium dioxide is investigated by using nonequilibrium molecular dynamics. The thermal conductivity of bulk thorium dioxide was measured to be 20.8 W/m-K, confirming reported values, and the phonon mean free path was estimated to be between 7 and 8.5 nm at 300 K. It was observed that the thermal conductivity of thorium dioxide shows a strong dependency on temperature; the highest thermal conductivity was estimated to be 77.3 W/m-K at 100 K, and the lowest thermal conductivity was estimated to be 4.3 W/m-K at 1200 K. In addition, by simulating thorium dioxide structures with different lengths at different temperatures, it was identified that short wavelength phonons dominate thermal transport in thorium dioxide at high temperatures, resulting in decreased intrinsic phonon mean free paths and minimal effect of boundary scattering while long wavelength phonons dominate the thermal transport in thorium dioxide at low temperatures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.35 no.5
• /
• pp.419-430
• /
• 2022

Defects in solids play a vital role on thermoelectric properties through the direct impacts of electronic band structure and electron/phonon transports, which can improve the electronic and thermal properties of a given thermoelectric semiconductor. Defects in semiconductors can be divided into four different types depending on their geometric dimensions, and thus understanding the effects on thermoelectric properties of each type is of a vital importance. This paper reviews the recent advances in the various thermoelectric semiconductors through defect engineering focusing on the charge carrier and phonon behaviors. First, we clarify and summarize each type of defects in thermoelectric semiconductors. Then, we review the recent achievements in thermoelectric properties by applying defect engineering when introducing defects into semiconductor lattices. This paper ends with a brief discussion on the challenges and future directions of defect engineering in the thermoelectric field.

• Journal of the Korean Magnetic Resonance Society
• /
• v.27 no.4
• /
• pp.28-34
• /
• 2023

We study the linear-nonlinear quantum transport theory of Wannier-Landau transition system in the confinement of electrons by a square well confinement potential. We use the projected Liouville equation method with the ensemble density projection technique. We select the dynamic value under a linearly oscillatory external field. We derive the dynamic value formula and the memory factor functions in three electron phonon coupling systems and electron impurity coupling systems of two transition types, the intra-band transitions and inter-band transitions. We obtain results that can be applied directly to numerical analyses. For simple example of application, we analyze the absorption power and line-widths of ZnO, through the numerical calculation of the theoretical result in the Landau system.