• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.3
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• pp.271-277
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• 2004

A Si(Silicon) MEMS(Micro Electro Mechanical System) package using a doped lossy Si carrier for CPW(Coplanar Waveguide) MMICs(Microwave and Millimeter-wave Integrated Circuits) is proposed in order to reduce parasitic problems of leakage, coupling and resonance. The proposed chip-carrier scheme is verified by fabricating and measuring a GaAs CPW on the two types of carriers(conductor-back metal, doped lossy Si) in the frequency from 0.5 to 40 ㎓. The proposed MEMS package using the lightly doped lossy(15 Ω$.$cm) Si chip-carrier and the HRS(High Resistivity Silicon, 15 ㏀$.$cm) shows the optimized loss and parasitic problems-free since the doped lossy Si-carrier effectively absorbs and suppresses the resonant leakage. The Si MEMS package for CPW MMICs has an insertion loss of only - 2.0 ㏈ and a power loss of - 7.5 ㏈ at 40 ㎓.

• The Transactions of the Korean Institute of Power Electronics
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• v.21 no.4
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• pp.356-363
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• 2016

The design methodology of an adequate input voltage and magnetizing inductance to minimize reactive power is suggested to design a wireless power transfer (WPT) converter for high-power transfer efficiency. To increase the magnetizing inductance, the turn number of the WPT coil is increased, thus causing high parasitic resistance in the WPT coil. Moreover, the high coil resistance produces high conduction loss in the transfer and receive coils. Therefore, the analysis of conduction loss is used in the design of the WPT coil and the operating point of the WPT converter. To verify the proposed design methodology, the mathematical analysis of the conduction loss is presented by experimental results.

• Journal of IKEEE
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• v.23 no.2
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• pp.403-406
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• 2019

We propose a low-loss on-chip transformer using an auxiliary primary part (APP) for an output matching network for fully integrated CMOS power amplifiers. The APP is designed using a fifth metal layer while the primary and secondary parts are designed using a sixth metal layer with a width smaller than that of the primary and secondary parts of the transformer to minimize the substrate loss and the parasitic capacitance between the primary and secondary parts. By adapting the APP in the on-chip transformer, we obtain an improved maximum available gain value without the need for any additional chip area. The feasibility of the proposed APP structure is successfully verified.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.40 no.3
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• pp.266-274
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• 1991

This paper proposed the resonant DC-DC converter with constant switching frequency. Its output is controlled by the auxiliary switch which is attached in conventional MRC circuits. The average output voltage is equal to the average voltage of the auxiliary switch. If the on time of the auxiliary switch is short, output voltage is decreased. Because of using the multi resonant method, the power loss from the parasitic elements can be decreased. Experimental performance of DF ZVS Forward MRC topology with switching frequency of 1MHz is presented.

• The Transactions of the Korean Institute of Power Electronics
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• v.20 no.1
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• pp.65-71
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• 2015

This paper presents the efficiency analysis of a critical current mode interleaved PFC rectifier, in which each of three different semiconductor switches is employed as the active switch. The Si FET, SiC FET, and GaN FET are consecutively used with the prototype PFC rectifier, and the efficiency of the PFC rectifier with each different semiconductor switch is analyzed. An equivalent circuit model of the PFC rectifier, which incorporates all the internal losses of the PFC rectifier, is developed. The rms values of the current waveforms main circuit components are calculated. By adapting the rms current waveforms to the equivalent model, all the losses are broken down and individually analyzed to assess the conduction loss, switching loss, and magnetic loss in the PFC rectifier. This study revealed that the GaN FET offers the highest overall efficiency with the least loss among the three switching devices. The GaN FET yields 96% efficiency at 90 V input and 97.6% efficiency at 240 V, under full load condition. This paper also confirmed that the efficiency of the three switching devices largely depends on the turn-on resistance and parasitic capacitance of the respective switching devices.

• Biotechnology and Bioprocess Engineering:BBE
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• v.11 no.4
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• pp.368-371
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• 2006

The standard procedure outlined by the United States Environmental Protection Agency (US EPA) in Method 1623 for analyzing Giardia lamblia cysts and Cryptosporidium parvum oocysts in water samples consists of filtration, elution, centrifugal concentration, immunomagnetic separation (IMS), and immunofluorescence assay (IFA) followed by microscopic examination. In this study, the extent of (oo)cyst loss in each step of this procedure was evaluated by comparing recovery yields in segmented analyses: (i) IMS + IFA, (ii) concentration + IMS + IFA, and (iii) filtration/elution + concentration + IMS + IFA. The complete (oo)cyst recovery by the full procedure was $52{\sim}57%$. The (oo) cyst loss in the IMS step was only $0{\sim}6%$, implying that IMS is a fairly reliable method for (oo)cyst purification. Centrifugal concentration of the eluted sample and pellet collection before IMS resulted in a loss of $8{\sim}14%$ of the (oo)cysts. The largest (oo)cyst loss occurred in the elution step, with $68{\sim}71%$ of the total loss. The permeated loss of (oo)cysts was negligible during filtration of the water sample with a $1.0-{\mu}m$ pore polyethersulfone (PES) capsule. These results demonstrated that the largest fraction of (oo)cyst loss in this procedure occurred due to poor elution from the filter matrix. Improvements in the elution methodology are therefore required to enhance the overall recovery yield and the reliability of the detection of these parasitic protozoa.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.7 s.110
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• pp.665-672
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• 2006

In this paper, we propose and fabricate the dual-band microstrip patch antenna with parasitic patch for S-DMB(Satellite-Digital Multimedia Broadcasting) and ITS (Intelligent Transport System) services. The measured - 10 dB bandwidth and the minimum return loss is 300 MHz and - 27 dB for S-DMB, 600 MHz and -17 dB for ITS, respectively. It is noticed that the measured and simulated results are agreed well. The S-DMB antenna has conical beam pattern in the vertical plane and has omni-directional beam pattern in the horizontal plane. The conical beam pattern has the maximum gain about 4.2 dBi when ${\theta}$ is $45^{\circ}$ at the center frequency of 2.6 GHz. The ITS antenna has directional beam pattern in the vertical plane that has maximum gain about 6.4 dBi when ${\theta}$ is $0^{\circ}$ at the center frequency of 5.8 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.2
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• pp.167-173
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• 2009

This paper proposes an electronically beam steering array antenna, consisting of single fed active element and 4 parasitic elements, operating in 5.8 GHz ISM band. Beam steering can be achieved by controlling the reactance of the variable reactance control circuit connected to the load of the parasitic elements without using the high cost phase shifters. The proposed antenna realizes ${\pm}30^{\circ}$ beam scanning of E-plane and H-plane with the below -10 dB return loss in ISM band. The gain of the $6.18{\sim}7.53\;dBi$ in E-plane and $7.022{\sim}7.779\;dBi$ in H-plane is shown in the scanning range.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.14 no.5
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• pp.223-230
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• 2014

In this paper, the single-fed microstrip parasitic array antenna for low-cost three-dimensional beam steering in 5.8GHz ISM(5.725GHz~5.825GHz) band is designed and implemented. The antenna is comprised of one feed active element and four passive elements with variable reactance loads. The beam steering range of implemented antenna is achieved three-dimensional beam steering of ${\pm}28^{\circ}$ at azimuth angle ${\Phi}=0^{\circ}$, ${\Phi}=45^{\circ}$, ${\Phi}=90^{\circ}$, and ${\Phi}=135^{\circ}$ by adjusting variable reactance loads. The maximum gain of the antenna in the beam steering range have within 7.23dBi~9.36dBi and the bandwidth of return loss lower than -10dB covers 5.8GHz ISM band regardless of the beam steering angles.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.9 no.4
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• pp.473-482
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• 1998

In this paper, characteristics of the wide band microstrip antennas with parasistic element are analyzed by the Finite Difference Time Domain(FDTD) method, and antenna parameters are optimized to get maximum bandwidth, retern loss, input impedance, and radiation pattern are calculated by Founier transforming the time domain results. The characteristics of the antenna are varied and the bandwidth of the antenna is broaded as a length and a width of the driven element, a gap of the driven element and the parasitic element, a width and a length of parasitic element. So the different patchs are resonating at different frequencies and this multipule resonance increase the bandwidth. The Results of the calculation and measurement, the size of the antenna with parasitic element is about a twice larger than a microstrip antenna, but bandwidth is four times better than a microstrip antenna. And these results were in relatively good accordance with the measured values.