• 전기학회논문지
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• 제65권10호
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• pp.1664-1671
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• 2016

This paper presents the analysis of the gate-source voltage of the gallium nitride high electronic mobility transistor (GaN HEMT) in the half bridge structure focused on the mutual effects of two switching operation. Especially low side gate-source voltage is analyzed mathematically according to the high side switch turn-on and turn-off operation. Moreover, the influence of each gate resistance and parasitic component on the switching characteristic of other side switch is investigated, and the formula, simulation and experimental results are compared with theoretical data.

• 정보저장시스템학회논문집
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• 제8권1호
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• pp.16-21
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• 2012

SAW device is widely used as filters, sensors, actuators in various technologies. And capacitive sensor is tremendously used to measure pressure, gap, etc. The application of SAW device as signal conditioner of capacitive sensor reduces noise level and enables high precision measurement. The response increase of SAW based capacitive sensor is produced just before the two capacitive electrode contacts by the existence of parasitic resistance of capacitive electrode. In this paper, we analyze the effects of parasitic resistance and propose the calibrating method using lumped component and execute the high precision gap measurement using calibrated system. And xx nm resolution and yy ${\mu}m$ stroke was attained.

• 한국항행학회논문지
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• 제15권4호
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• pp.596-601
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• 2011

본 논문에서는 간단한 회로구조와 높은 효율을 갖는 스위칭 방식의 E급 주파수 체배기에 대한 연구를 수행하였다. 주파수 체배는 능동소자의 비선형성에 의해 발생하는데 본 논문에서는 FET 능동소자를 간단한 스위치 및 기생소자 성분 모델로 근사하여 특성을 해석하고자 하였다. FET를 입력에 의해 동작하는 스위치 및 기생소자로 모델링하고 E급 주파수 체배기의 정합소자 값을 유도하였다. ADS시뮬레이터를 이용하여 출력 전압과 전류 파형 및 효율을 시뮬레이션하고 기생성분에 따른 변화를 연구하였다. 기생 커패시턴스, 저항, 인덕턴스에 의한 영향을 시뮬레이션하였으며 입력주파수 2.9GHz, 바이어스전압 2V일 때, 출력주파수 5.8GHz에서 기생커패시턴스가 0pF에서 1pF으로 변화함에 따라 드레인효율은 98%에서 28%로 감소하여 기생커패시턴스 CP가 FET의 기생 성분 중 가장 큰 영향을 끼친 것을 확인했다.

• Journal of Power Electronics
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• 제19권2호
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• pp.591-601
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• 2019

With the development of renewable energy, grid-connected inverter technology has become an important research area. When compared with traditional silicon IGBT power devices, the silicon carbide (SiC) MOSFET shows obvious advantages in terms of its high-power density, low power loss and high-efficiency power supply system. It is suggested that this technology is highly suitable for three-phase AC motors, renewable energy vehicles, aerospace and military power supplies, etc. This paper focuses on the SiC MOSFET behaviors that concern the parasitic component influence throughout the whole working process, which is based on a three-phase grid-connected inverter. A high-speed model of power switch devices is built and theoretically analyzed. Then the power loss is determined through experimental validation.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1999년도 전력전자학술대회 논문집
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• pp.367-372
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• 1999

In this paper, an inverter fed induction motor drive system is analyed in order to predict the conducted interference. High frequency model for inverter, motor and system parasitic components are proposed. High frequency component allows time and frequency domain analysis to be performed with standard PSpice tool. The overall high frequency component and model are verified by comparing simulation and experimental result.

• ETRI Journal
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• 제15권3_4호
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• pp.61-69
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• 1994

A new analytical model for the base current of Si/SiGe/Si heterojunction bipolar transistors(HBTs) has been developed. This model includes the hole injection current from the base to the emitter, and the recombination components in the space charge region(SCR) and the neutral base. Distinctly different from other models, this model includes the following effects on each base current component by using the boundary condition of the excess minority carrier concentration at SCR boundaries: the first is the effect of the parasitic potential barrier which is formed at the Si/SiGe collector-base heterojunction due to the dopant outdiffusion from the SiGe base to the adjacent Si collector, and the second is the Ge composition grading effect. The effectiveness of this model is confirmed by comparing the calculated result with the measured plot of the base current vs. the collector-base bias voltage for the ungraded HBT. The decreasing base current with the increasing the collector-base reverse bias voltage is successfully explained by this model without assuming the short-lifetime region close to the SiGe/Si collector-base junction, where a complete absence of dislocations is confirmed by transmission electron microscopy (TEM)[1].The recombination component in the neutral base region is shown to dominate other components even for HBTs with a thin base, due to the increased carrier storage in the vicinity of the parasitic potential barrier at collector-base heterojunction.

• Parasites, Hosts and Diseases
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• 제45권3호
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• pp.165-174
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• 2007

Toxoplasma gondii GRA10 expressed as a GFP-GRA10 fusion protein in HeLa cells moved to the nucleoli within the nucleus rapidly and entirely. GRA10 was concentrated specifically in the dense fibrillar component of the nucleolus morphologically by the overlap of GFP-GRA10 transfection image with IFA images by monoclonal antibodies against GRA10 (Tg378), B23 (nucleophosmin) and C23 (nucleolin). The nucleolar translocalization of GRA10 was caused by a putative nucleolar localizing sequence (NoLS) of GRA10. Interaction of GRA10 with TATA-binding protein associated factor 1B (TAF1B) in the yeast two-hybrid technique was confirmed by GST pull-down assay and immunoprecipitation assay. GRA10 and TAF1B were also co-localized in the nucleolus after co-transfection. The nucleolar condensation of GRA10 was affected by actinomycin D. Expressed GFP-GRA10 was evenly distributed over the nucleoplasm and the nucleolar locations remained as hollows in the nucleoplasm under a low dose of actinomycin D. Nucleolar localizing and interacting of GRA10 with TAF1B suggested the participation of GRA10 in rRNA synthesis of host cells to favor the parasitism of T. gondii.

• 조명전기설비학회논문지
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• 제26권11호
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• pp.48-53
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• 2012

In this paper designed J-class amplifier that have high efficiency using parasitic of pHEMT. Measured results of the designed J-class amplifier is maxmum output power of 31.5dBm and gain of 16.5dB, minimum output power of 29.8dBm. when input power 15dBm. Maxmum drain efficiency is 76.2% at 2.95GHz, maxmum drain efficiency is 61%. The J-class amplifier has average gain of 15.35dB and average efficiency of 35%.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(5)
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• pp.303-306
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• 2002

The EMI filter used in switching apparatus is designed on the basis of personal designer experience. A try and error approach leads to a considerables waste of time without assurance to come out to a good solution. The difficulty in the right choice of the component values resides on the dominant role played by their parasitic components at high frequencies and is aggravated by the poor knowledge of the internal impedance of the noise generators. In this paper, we proposed the design technique for the EMI filter effectively using the LISN and the EMI analyzer in the industrial field.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.89-92
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• 2001

In this paper, a simple low-power CMOS current reference circuit is proposed. The reference circuit includes parasitic pnp BJTs and resistors. Temperature compensation is made by adding a current component proportional to a thermal voltage to a current component proportional to a base-to-emitter voltage. The designed circuit has been simulated using a 0.25${\mu}{\textrm}{m}$ n-well CMOS process parameters. The simulation results show that the reference current is 34.96$mutextrm{A}$$\pm$0.04$mutextrm{A}$ in the temperature range of -2$0^{\circ}C$ to 12$0^{\circ}C$ The reference current varies less than 0.6% when the power supply voltage changes from 2.5V to 3.5V For $V_{DD=5V}$ and T=3$0^{\circ}C$ the power consumption is 520㎼ during normal operation but reduces to 0.l㎻ during power-down mode.