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http://dx.doi.org/10.6113/JPE.2019.19.2.591

Analytical and Experimental Validation of Parasitic Components Influence in SiC MOSFET Three-Phase Grid-connected Inverter  

Liu, Yitao (College of Mechatronics and Control Engineering, Shenzhen University)
Song, Zhendong (College of Mechatronics and Control Engineering, Shenzhen University)
Yin, Shan (Microsystem and Terahertz Research Center, Institute of Electronic Engineering, China Academy of Engineering Physics)
Peng, Jianchun (College of Mechatronics and Control Engineering, Shenzhen University)
Jiang, Hui (College of Optoelectronic Engineering, Shenzhen University)
Publication Information
Journal of Power Electronics / v.19, no.2, 2019 , pp. 591-601 More about this Journal
Abstract
With the development of renewable energy, grid-connected inverter technology has become an important research area. When compared with traditional silicon IGBT power devices, the silicon carbide (SiC) MOSFET shows obvious advantages in terms of its high-power density, low power loss and high-efficiency power supply system. It is suggested that this technology is highly suitable for three-phase AC motors, renewable energy vehicles, aerospace and military power supplies, etc. This paper focuses on the SiC MOSFET behaviors that concern the parasitic component influence throughout the whole working process, which is based on a three-phase grid-connected inverter. A high-speed model of power switch devices is built and theoretically analyzed. Then the power loss is determined through experimental validation.
Keywords
Gate driver; Modeling; Parasitic components; SiC MOSFET; Three-phase grid inverter;
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