Analytical and Experimental Validation of Parasitic Components Influence in SiC MOSFET Three-Phase Grid-connected Inverter |
Liu, Yitao
(College of Mechatronics and Control Engineering, Shenzhen University)
Song, Zhendong (College of Mechatronics and Control Engineering, Shenzhen University) Yin, Shan (Microsystem and Terahertz Research Center, Institute of Electronic Engineering, China Academy of Engineering Physics) Peng, Jianchun (College of Mechatronics and Control Engineering, Shenzhen University) Jiang, Hui (College of Optoelectronic Engineering, Shenzhen University) |
1 | H. Akagi, T. Yamagishi, N. M. L. Tan, S. i. Kinouchi, Y. Miyazaki, and M. Koyama, "Power-loss breakdown of a 750-V, 100-kW, 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules," in 2014 International Power Electronics Conference (IPECHiroshima 2014 - ECCE ASIA), pp. 750-757, 2014. |
2 | N. Oswald, P. Anthony, N. McNeill, and B. H. Stark, “An experimental investigation of the tradeoff between switching losses and EMI generation with hard-switched all-Si, Si-SiC, and all-SiC device combinations,” IEEE Trans. Power Electron., Vol. 29, No. 5, pp. 2393-2407, May 2014. DOI |
3 | X. Wang, C. Jiang, B. Lei, H. Teng, H. K. Bai, and J. L. Kirtley, “Power-loss analysis and efficiency maximization of a silicon-carbide MOSFET-based three-phase 10-kW bidirectional EV charger using variable-DC-bus control,” IEEE J. Emerg. Sel. Topics Power Electron., Vol. 4, No. 3, pp. 880-892, Sep. 2016. DOI |
4 | G. Kampitsis, M. Antivachis, S. Kokosis, S. Papathanassiou, and S. Manias, "An accurate Matlab/Simulink based SiC MOSFET model for power converter applications," in 2015 IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 1058-1064, 2015. |
5 | Z. Chen, "Characterization and modeling of high-switchingspeed behavior of SiC active devices," Virginia Tech, 2009. |
6 | J. Wang, X. Zhou, J. Li, T. Zhao, A. Q. Huang, R. Callanan, F. Husna, and A. Agarwal, “10-kV SiC MOSFET-based boost converter,” IEEE Trans. Ind. Appl., Vol. 45, No. 6, pp. 2056-2063, Nov. 2009. DOI |
7 | Y. Zhou, H. Liu, T. Yang, and B. Wang, “SPICE modeling of SiC MOSFET considering interface-trap influence,” CPSS Trans. Power Electron. Appl., Vol. 3, No. 1, pp. 56-64, Mar. 2018. DOI |
8 | J. Wang, T. Zhao, J. Li, A. Q. Huang, R. Callanan, F. Husna, and A. Agarwal, "Characterization, modeling, and application of 10-kV SiC MOSFET," IEEE Trans. Electron. Devices Vol. 55, No. 8, pp. 1798-1806, Aug. 2008. DOI |
9 | Y. Liu, Z. Song, H. Wang, G. Wang, J. Peng, and S. Yin, "Comparative evaluation of WBG and Si power devices for the flyback converter," in IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society, pp. 964-969, 2017. |
10 | S. Yin, K. J. Tseng, C. F. Tong, R. Simanjorang, Y. Liu, A. Nawawi, and A. K. Gupta, "Evaluation of power loss and efficiency for 50 kW SiC high power density converter," in 2016 Asian Conference on Energy, Power and Transportation Electrification (ACEPT), pp. 1-6, 2016. |
11 | W. Fu, "Design and Comparison of Si-based and SiC-based Three-Phase PV Inverters," University of Wisconsin-Milwaukee, 2015. |
12 | G. Zou, Z. Zhao, and L. Yuan, "Study on DC busbar structure considering stray inductance for the back-to-back IGBT-based converter," in 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 1213-1218, 2013. |
13 | F. Zare and G. F. Ledwich, “Reduced layer planar busbar for voltage source inverters,” IEEE Trans. Power Electron., Vol. 17, No. 4, pp. 508-516, Jul. 2002. DOI |
14 | J. V. P. S. Chennu, R. Maheshwari, and H. Li, “New resonant gate driver circuit for high-frequency application of silicon carbide MOSFETs,” IEEE Trans. Ind. Electron., Vol. 64, No. 10, pp. 8277-8287, Oct. 2017. DOI |
15 | J. Millan, P. Godignon, X. Perpina, A. Perez-Tomas, and J. Rebollo, “A survey of wide bandgap power semiconductor devices,” IEEE Trans. Power Electron., Vol. 29, No. 5, pp. 2155-2163, May 2014. DOI |
16 | W. L. Erdman, J. Keller, D. Grider, and E. Van Brunt, "A 2.3-MW medium-voltage, three-level wind energy inverter applying a unique bus structure and 4.5-kV Si/SiC hybrid isolated power modules," in 2015 IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 1282-1289, 2005. |
17 | S. D. Caro, S. Foti, T. Scimone, A. Testa, G. Scelba, M. Pulvirenti, and S. Russo, "Over-voltage mitigation on SiC based motor drives through an open end winding configuration," in 2017 IEEE Energy Conversion Congress and Exposition (ECCE), pp. 4332-4337, 2017. |
18 | K. Hamada, M. Nagao, M. Ajioka, and F. Kawai, “SiC emerging power device technology for next-generation electrically powered environmentally friendly vehicles,” IEEE Trans. Electron. Devices, Vol. 62, No. 2, pp. 278-285, Feb. 2015. DOI |
19 | S. Jahdi, O. Alatise, C. Fisher, L. Ran, and P. Mawby, “An evaluation of silicon carbide unipolar technologies for electric vehicle drive-trains,” IEEE J. Emerg. Sel. Topics Power Electron., Vol. 2, No. 3, pp. 517-528, Sep. 2014. DOI |
20 | C. Gammeter, F. Krismer, and J. W. Kolar, “Comprehensive conceptualization, design, and experimental verification of a weight-optimized all-SiC 2 kV/700 V DAB for an airborne wind turbine,” IEEE J. Emerg. Sel. Topics Power Electron., Vol. 4, No. 2, pp. 638-656, Jun. 2016. DOI |
21 | D. Han, C. T. Morris, W. Lee, and B. Sarlioglu, “Comparison between output CM chokes for SiC drive operating at 20-and 200-kHz switching frequencies,” IEEE Trans. Ind. Appl., Vol. 53, No. 3, pp. 2178-2188, May 2017. DOI |
22 | X. Li, J. Jiang, A. Q. Huang, S. Guo, X. Deng, B. Zhang, and X. She, “A SiC power MOSFET loss model suitable for high-frequency applications,” IEEE Trans. Ind. Electron., Vol. 64, No. 10, pp. 8268-8276, Oct. 2017. DOI |
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