• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2009년도 제40회 하계학술대회
• /
• pp.1511_1512
• /
• 2009

This paper presents a polarization switching antenna integrated with silicon RF MEMS SPDT switches in the form of a package. A low-loss quartz substrate made of SoQ (silicon-on-quartz) bonding is used as a dielectric material of the patch antenna, as well as a packaging lid substrate of RF MEMS switches. The packaging/antenna substrate is bonded with the bottom substrate including feeding lines and RF MEMS switches by BCB adhesive bonding, and RF energy is transmitted from signal lines to antenna by slot coupling. Through this approach, fabrication complexity and degradation of RF performances of the antenna due to the parasitic effects, which are all caused from the packaging methods, can be reduced. This structure is expected to be used as a platform for reconfigurable antennas with RF MEMS tunable components. A linear polarization switching antenna operating at 19 GHz is manufactured based on the proposed method, and the fabrication process is carefully described. The s-parameters of the fabricated antenna at each state are measured to evaluate the antenna performance.

• 마이크로전자및패키징학회지
• /
• 제20권4호
• /
• pp.17-23
• /
• 2013

신축성 전자패키징 기술개발을 위한 기초연구로서 Cu/Sn 범프에 CNT-Ag 복합패드를 형성한 칩을 이방성 전도접착제를 사용하여 플립칩 본딩한 후, CNT-Ag 복합패드의 유무 및 본딩압력에 따른 플립칩 접속부의 접속저항을 측정하였다. CNT-Ag 복합패드가 형성된 Cu/Sn 칩 범프를 25MPa과 50MPa의 본딩압력으로 플립칩 본딩한 시편들은 접속저항이 너무 높아 측정이 안되었으며, 100MPa의 본딩압력으로 플립칩 본딩한 시편은 $213m{\Omega}$의 평균 접속저항을 나타내었다. 이에 비해 CNT-Ag 복합패드가 없는 Cu/Sn 칩 범프를 사용하여 25MPa, 50 MPa 및 100 MPa의 본딩압력으로 플립칩 본딩한 시편은 각기 $1370m{\Omega}$, $372m{\Omega}$ 및 $112m{\Omega}$의 평균 접속저항을 나타내었다.

• 마이크로전자및패키징학회지
• /
• 제20권2호
• /
• pp.33-38
• /
• 2013

In this study, both a finite element analysis and an experimental analysis are executed to investigate the mechanical characteristics of dielectric material effects on warpage. Also, viscoelastic material properties are measured by DMA and are considered in warpage simulation. A finite element analysis is done by using both thermal elastic analysis and a thermo-viscoelastic analysis to predict the nonlinear effects. For experimental study, specimens warpage of non-symmetric structure with body size of $22.5{\times}22.5$ mm, $37.5{\times}37.5$ mm and $42.5{\times}42.5$ mm are measured under the reflow temperature condition. From the analysis results, experimental warpage is not similar to FEA results using thermal elastic analysis but similar to FEA results using thermo-viscoelastic analysis. Also, its effect on substrate warpage is increased as core thickness is decreased and body size is getting larger. These FEA and the experimental results show that the nonlinear characteristics of dielectric material play an important role on substrate warpage. Therefore, it is strongly recommended that non-linear behavior characteristics of a dielectric material should be considered to control warpage of FCBGA substrate under conditions of geometry, structure and manufacturing process and so on.

• 마이크로전자및패키징학회지
• /
• 제9권3호
• /
• pp.7-12
• /
• 2002

LTCC(Low temperature Cofiring Ceramics)기판의 고주파특성 평가에 있어서, 기판은 전극 패터닝 공정 방식이 결합된 하나의 시스템으로 평가되어야 한다. LTCC의 경우 시스템마다 상이한 소결 수축 과정, 전극과 기판의 접합 특성(matching) 차이, 사용 도체간 전기 전도도의 차이 등으로 인해 유전 특성 및 신호손실이 차이를 나타내었다. 본 논문에서는 FR-4, Duroid, Teflon등 기존의 상용 PCB(Printed Circuit Board) 와의 상대적인 비교를 통해 현재 사용되고 있는 LTCC 기판의 주파수 응용도를 확인하였으며, 20 ㎓까지 측정을 수행하였다. 측정방식으로는 Ring 공진기와 Series-Gap 공진기를 활용한 마이크로 스트립 공진기 방법을 채택하였으며, 실험 결과 기판손실 측정은 Ring 공진기 방식이 유효하였으며 유전률 측정은 Series-Gap 공진기 방식이 유효함을 확인하였다. 또한 주파수 증가에 따라 LTCC 기판의 전극 패터닝 방식이 시스템의 손실에 미치는 영향에 대해 분석하였다.

• 마이크로전자및패키징학회지
• /
• 제25권4호
• /
• pp.25-34
• /
• 2018

In this paper, we review the latest technical progress and commercialization of stretchable interconnectors, stretchable strain sensors, and stretchable substrates for stretchable electronics. The development of stretchable electronics can pave a way for new applications such as wearable devices, bio-integrated devices, healthcare and monitoring, and soft robotics. The essential components of stretchable electronic devices are stretchable interconnector and stretchable substrate. Stretchable interconnector should have high stretchability and high electrical conductivity as well as stability under severe mechanical deformation. Therefore several nanocomposite-based materials using CNT, graphene, nanowire, and metal flake have been developed. Geometric engineering such as wavy, serpentine, buckled and mesh structure has been well developed. Stretchable substrate should also pose high stretchability and compatibility with stretchable sensing or interconnecting material. We summarize the recent research results of new materials for stretchable interconnector and substrate as well as strain sensors. The Important challenges in development of the stretchable interconnector and substrate are also briefly discussed.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
• /
• pp.30-32
• /
• 2005

This paper reports on an LTCC-based packaging method using Au/Sn eutectic bonding process for RF MEMS applications. The proposed packaging structure was realized by a micromachining technology. An LTCC substrate consists of metal filled vertical via feedthroughs for electrical interconnection and Au/Sn sealing rim for eutectic bonding. The LTCC capping substrate and the glass bottom substrate were aligned and bonded together by a flip-chip bonding technology. From now on, shear strength and He leak rate will be measured then the fabricated package will be compared with the LTCC package using BCB adhesive bonding method which has been researched in our previous work.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2007년도 제38회 하계학술대회
• /
• pp.1504-1505
• /
• 2007

In this paper, fully embedded high Dk BTO MIM capacitors have been developed into a multi-layered organic package substrate for low cost RF SOP (System on Package) applications. These embedded MIM capacitors were designed and simulated by using CST 3D EM simulators for finding out optimal geometries and verifying their applicability. The embedded MIM capacitor with a size of $550\;{\times}\;550\;um^2$ has a capacitance of 5.3pF and quality factor of 43 at 1.5 GHz, respectively. The measured performance characteristics were well matched with 3D EM simulated ones. Equivalent circuit parameters of the embedded capacitors were extracted for making a design library.

• 마이크로전자및패키징학회지
• /
• 제24권3호
• /
• pp.27-34
• /
• 2017

Polydimethylsiloxane (PDMS) 신축기판과 Au 박막 사이의 중간층으로서 parylene F의 적용 가능성을 분석하고, Au 박막의 스퍼터링 중에 발생하는 PDMS 기판의 swelling이 Au 박막의 신축변형-저항 특성에 미치는 영향을 분석하였다. Parylene F 중간층 없이 PDMS 기판에 스퍼터링한 150 nm 두께의 Au 박막은 $11.7{\Omega}$의 초기저항을 나타내었으며, 12.5%의 인장변형률에서 저항의 overflow가 발생하였다. 반면에 150 nm 두께의 parylene F 중간층을 갖는 Au 박막의 초기저항은 $1.21{\Omega}$이었으며 30% 인장변형률에서 저항이 $246{\Omega}$으로 저항증가비가 현저히 낮아졌다. PDMS 기판의 swelling이 발생함에 따라 30% 인장변형률에서 Au 박막의 저항이 $14.4{\Omega}$으로 크게 저하되었다.

• 마이크로전자및패키징학회지
• /
• 제26권4호
• /
• pp.47-53
• /
• 2019

Polydimethylsiloxane (PDMS)를 베이스 기판으로 사용하고 이보다 강성도가 높은 polytetrafluoroethylene(PTFE)를 island 기판으로 사용한 soft PDMS/hard PDMS/PTFE 구조의 강성도 경사형 신축 패키지를 형성하고, 이의 신축변형에 따른 저항특성을 분석하였다. PDMS/PTFE 기판패드에 50 ㎛ 직경의 칩 범프들을 anisotropic conductive paste를 사용하여 실장한 플립칩 접속부는 96 mΩ의 평균 접속저항을 나타내었다. Soft PDMS/hard PDMS/PTFE 구조의 신축 패키지를 30% 변형률로 인장시 PTFE의 변형률이 1%로 억제되었으며, PTFE 기판에 형성한 회로저항의 중가는 1%로 무시할 정도였다. 0~30% 범위의 신축변형 싸이클을 2,500회 반복시 회로저항이 1.7% 증가하였다.

• 한국마이크로전자및패키징학회:학술대회논문집
• /
• 한국마이크로전자및패키징학회 1999년도 추계 기술심포지움 논문집
• /
• pp.111-115
• /
• 1999

The $Li_2O-MgO-MgF_2-SiO_2$glasses with addition of $B_2O_3$ were investigated in order to make glass-ceramics for low temperature firing substrate. Glasses were made by melting at $1450^{\circ}C$ in the electronic furnace and crystallized at $750^{\circ}C$. After the crystallization, crystal phases and microstructure were observed. The crystal phases were polycrystalline of lithium boron fluorphlogopite and lithium fluorhectorite. The crystal shape was changed to grande type from needle type with the increase in $B_2O_3$ contents. Average particle size of the glass-ceramics aftar water swelling was $3.77{\mu}{\textrm}{m}$. The optimum sintering temperature and sintering shrinkage of the substrate were $900^{\circ}C$ and 13.4vol%, respectively.