Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)

The Korean Microelectronics and Packaging Society (한국마이크로전자및패키징학회)
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Flip Chip Process on CNT-Ag Composite Pads for Stretchable Electronic Packaging

신축성 전자패키징을 위한 CNT-Ag 복합패드에서의 플립칩 공정

  • Choi, Jung Yeol (Department of Materials Science and Engineering, Hongik University) ;
  • Oh, Tae Sung (Department of Materials Science and Engineering, Hongik University)
  • 최정열 (홍익대학교 공과대학 신소재공학과) ;
  • 오태성 (홍익대학교 공과대학 신소재공학과)
  • Received : 2013.12.16
  • Accepted : 2013.12.26
  • Published : 2013.12.30
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Abstract

As a basic research to develop stretchable electronic packaging technology, CNT-Ag composite pads were formed on top of Cu/Sn chip bumps and flip-chip bonded using anisotropic conductive adhesive. Average contact resistances of the flip-chip joints were measured with respect to bonding pressure and presence of the CNT-Ag composite pads. When Cu/Sn chip bumps with CNT-Ag composite pads were flip-chip bonded to substrate Cu pads at 25MPa or 50 MPa, contact resistance was too high to measure. The specimen processed by flip-chip bonding the Cu/Sn chip bumps with CNT-Ag composite pads to the substrate Cu pads exhibited an average contact resistance of $213m{\Omega}$. On the other hand, the flip-chip specimens processed by bonding Cu/Sn chip bumps without CNT-Ag composite pads to substrate Cu pads at 25MPa, 50MPa, and 100MPa exhibited average contact resistances of $370m{\Omega}$, $372m{\Omega}$, and $112m{\Omega}$, respectively.

신축성 전자패키징 기술개발을 위한 기초연구로서 Cu/Sn 범프에 CNT-Ag 복합패드를 형성한 칩을 이방성 전도접착제를 사용하여 플립칩 본딩한 후, CNT-Ag 복합패드의 유무 및 본딩압력에 따른 플립칩 접속부의 접속저항을 측정하였다. CNT-Ag 복합패드가 형성된 Cu/Sn 칩 범프를 25MPa과 50MPa의 본딩압력으로 플립칩 본딩한 시편들은 접속저항이 너무 높아 측정이 안되었으며, 100MPa의 본딩압력으로 플립칩 본딩한 시편은 $213m{\Omega}$의 평균 접속저항을 나타내었다. 이에 비해 CNT-Ag 복합패드가 없는 Cu/Sn 칩 범프를 사용하여 25MPa, 50 MPa 및 100 MPa의 본딩압력으로 플립칩 본딩한 시편은 각기 $1370m{\Omega}$, $372m{\Omega}$ 및 $112m{\Omega}$의 평균 접속저항을 나타내었다.

Keywords

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