• Title/Summary/Keyword: PLASMA SURFACE TREATMENT

Search Result 991, Processing Time 0.029 seconds

Interface Treatment Effect of High Performance Flexible Organic Thin Film Transistor (OTFT) Using PVP Gate Dielectric in Low Temperature (저온 공정 PVP게이트 절연체를 이용한 고성능 플렉서블 유기박막 트랜지스터의 계면처리 효과)

  • Yun, Ho-Jin;Baek, Kyu-Ha;Shin, Hong-Sik;Lee, Ga-Won;Lee, Hi-Deok;Do, Lee-Mi
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.24 no.1
    • /
    • pp.12-16
    • /
    • 2011
  • In this study, we fabricated the flexible pentacene TFTs with the polymer gate dielectric and contact printing method by using the silver nano particle ink as a source/drain material on plastic substrate. In this experiment, to lower the cross-linking temperature of the PVP gate dielectric, UV-Ozone treatment has been used and the process temperature is lowered to $90^{\circ}C$ and the surface is optimized by various treatment to improve device characteristics. We tried various surface treatments; $O_2$ Plasma, hexamethyl-disilazane (HMDS) and octadecyltrichlorosilane (OTS) treatment methods of gate dielectric/semiconductor interface, which reduces trap states such as -OH group and grain boundary in order to improve the OTFTs properties. The optimized OTFT shows the device performance with field effect mobility, on/off current ratio, and the sub-threshold slope were extracted as $0.63cm^2 V^{-1}s^{-1}$, $1.7{\times}10^{-6}$, and of 0.75 V/decade, respectively.

Improvement of Solder Joint Strength in SAC 305 Solder Ball to ENIG Substrate Using LF Hydrogen Radical Treatment (SAC 305솔더와 ENIG 기판의 접합강도에 미치는 저주파 수소라디칼처리의 영향)

  • Lee, Ah-Reum;Jo, Seung-Jae;Park, Jai-Hyun;Kang, Chung-Yun
    • Journal of Welding and Joining
    • /
    • v.29 no.1
    • /
    • pp.99-106
    • /
    • 2011
  • Joint strength between a solder ball and a pad on a substrate is one of the major factors which have effects on electronic device reliability. The effort to improve solder joint strength via surface cleaning, heat treatment and solder composition change have been in progress. This paper will discuss the method of solder ball joint strength improvement using LF hydrogen radical cleaning treatment and focus on the effects of surface treatment condition on the solder ball shear strength and interfacial reactions. In the joint without radical cleaning, voids were observed at the interface. However, the specimens cleaned by hydrogen-radical didn't have voids at the interface regardless of cleaning time. The shear strength between the solder ball and the pad was increased over 120%(about 800gf) when compared to that without the radical treatment (680gf) under the same reflow condition. Especially, at the specimen treated for 5minutes, ball shear strength was considerably increased over 150%(1150gf). Through the observation of fracture surface and cross-section microstructure, the increase of joint strength resulted from the change of fracture mode, that is, from the solder ball fracture to IMC/Ni(P) interfacial fracture. The other cases like radical treated specimen for 1, 3, 7, 9min. showed IMC/solder interfacial fracture rather than fracture in the solder ball.

Deposition Characteristics of $TEOS-O_3$ Oxide Film on Substrate (기판 막질에 따른 $TEOS-O_3$ 산화막의 증착 특성)

  • Ahn, Yong-Cheol;Park, In-Seon;Choi, Ji-Hyeon;Chung, U-In;Lee, Jeong-Gyu;Lee, Jeong-Gyu
    • Korean Journal of Materials Research
    • /
    • v.2 no.1
    • /
    • pp.76-82
    • /
    • 1992
  • Deposition of $TEOS-O_3$ oxide film as inter-metal dielectric layer shows the substrate dependency according to the substrate material and pattern density and pitch size. To minimize substrate and Pattern dependency, TEOS-base and $SiH_4-base$ Plasma oxide were predeposited as underlying material on the substrate. The substrate dependency of $TEOS-O_3$ oxide film was more significant on TEOS-base plasma oxide than on $SiH_4-base$ plasma oxide. The dependency of $TEOS-O_3$ oxide film was remarkably reduced, or nearly eliminated, by $N_2$plasma treatment on TEOS-base plasma oxide, which appears to be caused by the O-Si-N structure, observed on the the surface of TEOS-base plasma oxide.

  • PDF

Development of Confined Plasma Source for Hazardous Gas Treatment (유해가스 처리를 위한 Confined Plasma Source 개발)

  • Yoon, Yongho
    • The Journal of the Institute of Internet, Broadcasting and Communication
    • /
    • v.20 no.3
    • /
    • pp.135-140
    • /
    • 2020
  • Since the process gas that is essential in the semiconductor process is a harmful gas, it is an essential task to solve it in an environmentally friendly manner. Currently, the cleaning technology used in the semiconductor process is mostly a wet cleaning based on hydrogen peroxide developed in the 1970s, and the SC-1 cleaning liquid for removing particles on the surface uses a mixture of ammonia and hydrogen peroxide. Therefore, environmental problems are caused, and economic problems caused by excessive water use are also serious. For this reason, the products developed through this study are used to decompose the process harmful gas from the chamber outlet into a harmless gas before entering the vacuum pump, or by incineration and the gaseous components are deposited on the pump. I want to solve the problem. In this paper, CPS (Confined Plasma Source) is proposed to save environment and improve productivity by replacing harmful gases (N2, CF4, SF6⋯., Etc) which are indispensable in semi-contamination process with innocuous gases or incineration with plasma, to study.

Study of P-type Wafer Doping for Solar Cell Using Atmospheric Pressure Plasma (대기압 플라즈마를 이용한 P타입 태양전지 웨이퍼 도핑 연구)

  • Yun, Myoungsoo;Jo, Taehun;Park, Jongin;Kim, Sanghun;Kim, In Tae;Choi, Eun Ha;Cho, Guangsup;Kwon, Gi-Chung
    • Current Photovoltaic Research
    • /
    • v.2 no.3
    • /
    • pp.120-123
    • /
    • 2014
  • Thermal doping method using furnace is generally used for solar-cell wafer doping. It takes a lot of time and high cost and use toxic gas. Generally selective emitter doping using laser, but laser is very high equipment and induce the wafer's structure damage. In this study, we apply atmospheric pressure plasma for solar-cell wafer doping. We fabricated that the atmospheric pressure plasma jet injected Ar gas is inputted a low frequency (1 kHz ~ 100 kHz). We used shallow doping wafers existing PSG (Phosphorus Silicate Glass) on the shallow doping CZ P-type wafer (120 ohm/square). SIMS (Secondary Ion Mass Spectroscopy) are used for measuring wafer doping depth and concentration of phosphorus. We check that wafer's surface is not changed after plasma doping and atmospheric pressure doping width is broaden by increase of plasma treatment time and current.

Surface Morphology of PEO-treated Ti-6Al-4V Alloy after Anodic Titanium Oxide Treatment (ATO 처리후, 플라즈마 전해 산화 처리된 Ti-6Al-4V 합금의 표면 형태)

  • Kim, Seung-Pyo;Choe, Han-Cheol
    • Proceedings of the Korean Institute of Surface Engineering Conference
    • /
    • 2018.06a
    • /
    • pp.75-75
    • /
    • 2018
  • Commercially pure titanium (CP-Ti) and Ti-6Al-4V alloys have been widely used in implant materials such as dental and orthopedic implants due to their corrosion resistance, biocompatibility, and good mechanical properties. However, surface modification of titanium and titanium alloys is necessary to improve osseointegration between implant surface and bone. Especially, when titanium oxide nanotubes are formed on the surface of titanium alloy, cell adhesion is greatly improved. In addition, plasma electrolytic oxide (PEO) coatings have a good safety for osseointegration and can easily and quickly form coatings of uniform thickness with various pore sizes. Recently, the effects of bone element such as magnesium, zinc, strontium, silicon, and manganese for bone regeneration are researching in dental implant field. The purpose of this study was researched on the surface morphology of PEO-treated Ti-6Al-4V alloy after anodic titanium oxide treatmentusing various instruments. Ti-6Al-4V ELI disks were used as specimens for nanotube formation and PEO-treatment. The solution for the nanotube formation experiment was 1 M $H_3PO_4$ + 0.8 wt. % NaF electrolyte was used. The applied potential was 30V for 1 hours. The PEO treatment was performed after removing the nanotubes by ultrasonics for 10 minutes. The PEO treatment after removal of the nanotubes was carried out in the $Ca(CH_3)_2{\cdot}H_2O+(CH_3COO)_2Mg{\cdot}4H_2O+Mn(CH_3COO)_2{\cdot}4H_2O+Zn(CH_3CO_2)_2Zn{\cdot}2H_2O+Sr(CH_2COO)_2{\cdot}0.5H_2O+C_3H_7CaO_6P$ and $Na_2SiO_3{\cdot}9H_2O$ electrolytes. And the PEO-treatment time and potential were 3 minutes at 280V. The morphology changes of the coatings on Ti-6Al-4V alloy surface were observed using FE-SEM, EDS, XRD, AFM, and scratch tester. The morphology of PEO-treated surface in 5 ion coating solution after nanotube removal showed formation or nano-sized mesh and micro-sized pores.

  • PDF

Effect of ZnO Nanoparticle Presence on SCC Mitigation in Alloy 600 in a Simulated Pressurized Water Reactors Environment

  • Sung-Min Kim;Woon Young Lee;Sekown Oh;Sang-Yul Lee
    • Journal of the Korean institute of surface engineering
    • /
    • v.56 no.6
    • /
    • pp.401-411
    • /
    • 2023
  • This study investigates the synthesis, characterization, and application of zinc oxide (ZnO) nanoparticles for corrosion resistance and stress corrosion cracking (SCC) mitigation in high-temperature and high-pressure environments. The ZnO nanoparticles are synthesized using plasma discharge in water, resulting in rod-shaped particles with a hexagonal crystal structure. The ZnO nanoparticles are applied to Alloy 600 tubes in simulated nuclear power plant atmospheres to evaluate their effectiveness. X-ray diffraction and X-ray photoelectron spectroscopy analysis reveals the formation of thermodynamically stable ZnCr2O4and ZnFe2O4 spinel phases with a depth of approximately 35 nm on the surface after 240 hours of treatment. Stress corrosion cracking (SCC) mitigation experiments reveal that ZnO treatment enhances thermal and mechanical stability. The ZnO-treated specimens exhibit increased maximum temperature tolerance up to 310 ℃ and higher-pressure resistance up to 60 bar compared to non-treated ZnO samples. Measurements of crack length indicate reduced crack propagation in ZnO-treated specimens. The formation of thermodynamically stable Zn spinel structures on the surface of Alloy 600 and the subsequent improvements in surface properties contribute to the enhanced durability and performance of the material in challenging high-temperature and high-pressure environments. These findings have significant implications for the development of corrosion-resistant materials and the mitigation of stress corrosion cracking in various industries.

The Effect of Pretreatment(Q/T) on the Plasma Nitriding of SCM435 Structural Steel (SCM435 구조용 합금강의 플라즈마 질화에 미치는 전처리(Q/T)의 영향)

  • Lim, Young-Phil;Park, Dae-Chul;Lee, Jae-Sig;You, Yong-Zoo
    • Journal of the Korean Society for Heat Treatment
    • /
    • v.11 no.2
    • /
    • pp.99-110
    • /
    • 1998
  • The effects of pre-heat treatment(Q/T) on microstructure and hardness of SCM435 structural steel nitrided by micro-pulse plasma was investigated. The quenching and tempering temperatures for obtaining matrix hardness of SCM435 steel on range of HRC30 to HRC40 desired for machine parts were about $860^{\circ}C$ and $500^{\circ}C$ respectively. The case depth of SCM435 nitrided at $480^{\circ}C$ for 5 hours was independent of pre-heat treatment condition and was approximately $150{\mu}m$. However, hardness and compactness of nitrified layer on Q/T treated specimen were more heigher than annealed specimen. The case depth increased linearly with the increase of nitriding temperature, however, the hardness of nitrified layer decreased with the temperature. Phase mixture of ${\gamma}^{\prime}$-phase($Fe_4N$) and ${\varepsilon}$-phase($Fe_3N$) were detected by XRD analysis in the nitrified layer formed at optimum nitriding condition, and only single ${\gamma}^{\prime}$-phase was detected in the nitrified layer formed at higher nitriding temperature such as $540^{\circ}C$. The optimum nitriding temperature was approximately $480^{\circ}C$ which is lower than tempering temperature for preventing softening behavior of SCM435 matrix during nitriding process and the surface hardness of nitrified layer obtained by optimum preheat treatment condition was about Hv930.

  • PDF

Study of Oxygen Plasma Effects to Reduce the Contact Resistance of n-type GaN with Nitrogen Polarity (질소 분극면을 갖는 N형 질화물반도체의 접촉저항 감소를 위한 산소 플라즈마 효과에 관한 연구)

  • Nam, T.Y.;Kim, D.H.;Lee, W.H.;Kim, S.J.;Lee, B.G.;Kim, T.G.;Jo, Y.C.;Choi, Y.S.
    • Journal of the Korean Vacuum Society
    • /
    • v.19 no.1
    • /
    • pp.10-13
    • /
    • 2010
  • We studied the effect of $O_2$ plasma treatments on the electrical property of Ti / Al ohmic contacts to N-face n-type GaN. The surface of N-face, n-type GaN has been treated with $O_2$ plasma for 120 s before the deposition of bilayered electrodes, Ti (50 nm) / Al (35 nm), and its contact resistance was compared with that of the reference sample without $O_2$ plasma. As a result, we found that the ohmic contact was reduced from $4.3\;{\times}\;10^{-1}\;{\Omega}cm^2$ to $1.25\;{\times}\;10^{-3}\;{\Omega}cm^2$ by applying $O_2$ plasma on the surface of n-type GaN, which was attributed to the reduction in the Schottky barrier height (SBH), caused by nitrogen vacancies formed during the $O_2$ plasma process.

Mechanical Properties of Vapor Grown Carbon Fiber/Epoxy Nanocomposites With Different Dispersion Methods

  • Khuyen, Nguyen Quang;Kim, Byung-Sun;Kim, Jin-Bong;Lee, Soo
    • Journal of the Korean Applied Science and Technology
    • /
    • v.24 no.3
    • /
    • pp.264-271
    • /
    • 2007
  • Effect of dispersion methods for Vapor Grown Carbon Fibers (VGCF) in epoxy caused the change in mechanical properties of VGCF/epoxy nanocomposites, such as tensile modulus and tensile strength. The influence of VGCF types - atmospheric plasma treated (APT) VGCF and raw VGCF - and their contents was discussed in detail. Treating VGCF with atmospheric plasma enhanced the surface energy, therefore improved the bonding strength with epoxy matrix. Two different methods used to disperse VGCF were ultrasonic and mechanical homogenizer methods. When using dispersion solutions, the VGCF demonstrated good dispersion in ethanol in both homogenizer and ultrasonic method. The uniform dispersion of VGCF was investigated by scanning electron microscopy (SEM) which showed well-dispersion of VGCF in epoxy matrix. The tensile modulus of raw VGCF/epoxy nanocomposites obtained by ultrasonic method was higher than that of one obtained by homogenizer method. APT VGCF/epoxy nanocomposites showed higher tensile strength than that of raw VGCF/epoxy nanocomposites.