• International Journal of Control, Automation, and Systems
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• v.2 no.2
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• pp.256-262
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• 2004

Conventionally, profile non-uniformity has been characterized by relying on approximated profile with angle or anisotropy. In this study, a new non-uniformity model for etch profile is presented by applying a discrete wavelet to the image obtained from a scanning electron microscopy (SEM). Prediction models for wavelet-transformed data are then constructed using a back-propagation neural network. The proposed method was applied to the data collected from the etching of tungsten material. Additionally, 7 experiments were conducted to obtain test data. Model performance was evaluated in terms of the average prediction accuracy (APA) and the best prediction accuracy (BPA). To take into account randomness in initial weights, two hundred models were generated for a given set of training factors. Behaviors of the APA and BPA were investigated as a function of training factors, including training tolerance, hidden neuron, initial weight distribution, and two slopes for bipolar sig-moid and linear function. For all variations in training factors, the APA was not consistent with the BPA. The prediction accuracy was optimized using three approaches, the best model based approach, the average model based approach and the combined model based approach. Despite the largest APA of the first approach, its BPA was smallest compared to the other two approaches.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.3
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• pp.1-8
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• 1997

The surface properties after plasma etching of TiW alloy using the chemistries of BCl$_{3}$ and SF$_{6}$ gases with varying mixing ratio have been investigated using XPS(X-ray photoelectron spectrocopy). The elements existed on the etched sampled have been extracted with BCL$_{3}$/SF$_{6}$ ratio and their chemical binding states have also been analysed. It was confirmed that the thickness of native oxide formed on the TiW films is thinner than 10nm by using Ar sputtering. At the same time, the roughness of etched surface has been esamnied using AFM (atomic force microscopy). on the basis of the basis of this results, the relations between the caanges of oxygen contents detected by XPS and the rouhness of etched surface have been discussed. And the etch rate and etched profile of Tiw films have been examined and the changes of the etch rate and etched prfile have been discussed with XPS results. From XPS results, the role of passivation layer consisted of Ti-S compound with XPS results. From XPS results, the role of passivation layer consisted of Ti-S compound has been proposed. Ti-S compound seems to make a role of passivation layer that surpresses Ti-O formation.ion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.209-212
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• 2001

Polyimide(PI) films have been considered as the interlayer dielectric materials due to low dielectric constant, low water absorption, high gap-fill and planarization capability. The PI mm Was etched with using inductively coupled plasma (ICP). The etching characteristics such as etch rate and selectivity were evaluated to gas mixing ratio. High etch rate was $8300{\AA}/min$ and vertical profile was approximately acquired $90^{\circ}$ at $CF_{4}/(CF_{4}+O_{2})$ of 0.2. The selectivies of polyimide to PR and $SiO_{2}$ were 1.2, 5.9, respectively. The etching profiles of PI films with an aluminum pattern were measured by a scanning electron microscope (SEM). The chemical states on the PI film surface were investigated by x-ray photoelectron spectroscopy (XPS). Radical densities of oxygen and fluorine in different gas mixing ratio of $O_{2}/CF_{4}$ were investigated by optical emission spectrometer (OES).

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.145-146
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• 2006

A fluorine-doped diamond-like carbon (F-DLC) stamp which has high contact angle, high UV-transmittance and sufficient hardness, was fabricated using the following direct etching method: F-DLC is deposited on a quartz substrate using DC and RF magnetron sputtering, PMMA is spin coated and patterned using e-beam lithography and finally, O2 plasma etching is performed to transfer the line patterns having 100 nm line width, 100 nm line space and 70 nm line depth on F-DLC. The optimum fluorine concentration was determined after performing several pre-experiments. The stamp was applied successfully to UV-NIL without being coated with an anti-adhesion layer.

• Journal of the Korean Ceramic Society
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• v.46 no.5
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• pp.441-446
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• 2009

Dense crack-free yttria film with 10 $\mu m$ thickness was prepared on aluminum by aerosol deposition. X-ray diffraction pattern on the film showed that it contained the same crystalline phase as the raw powder. Transmission electron microscopy revealed a nanostructured yttria film with grains smaller than 100 nm. Tensile adhesion strength between the film and aluminum substrate was 57.8 $\pm$ 6.3MPa. According to the etching test with $CF_4-O_2$ plasma, the etching rate of the yttria film was 1/100 that of quartz, 1/10 that of sintered alumina and comparable to that of sintered yttria.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.105-106
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• 2006

The ferroelectric materials of the PZT, SBT attracted much attention for application to ferroelectric random access memory (FRAM) devices. Through the last decade, the lead zirconate titanate (PZT) is one of the most attractive perovskite-type materials for the ferroelectric products due to its higher remanant polarization and the ability to withstand higher coercive fields. FRAM has been currently receiving increasing attention for one of future memory devices due to its ideal memory properties such as non-volatility, high charge storage, and faster switching operations. In this study, we first applied the damascene process using chemical mechanical polishing (CMP) to the fabricate the $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ thin film capacitor in order to solve the problems of plasma etching such as low etching profile and ion charging. The structural characteristics were compared with specimens before and after CMP process of PZT films. The scanning electron microscopy (SEM) analysis was performed to compare the morphology surface characteristics of $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ capacitors. The densification by the vertical sidewall patterning and charging-free ferroelectric capacitor could be obtained by the damascene process without remarkable difference of the characteristics.

• Transactions on Electrical and Electronic Materials
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• v.4 no.5
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• pp.10-14
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• 2003

A low-cost, large area, random, maskless texturing scheme independent of crystal orientation is expected to have significant impact on terrestrial photovoltaic technology. We investigated silicon surface microstructures formed by reactive ion etching (R IE) in Multi-Hollow cathode system. Desirable texturing effect has been achieved when radio-frequency (rf) power of about 20 Watt per one hollow cathode glow is applied for our RF Multi -Hollow cathode system. The black silicon etched surface shows almost zero reflectance in the visible region as well as in near IR region. The etched silicon surface is covered by columnar microstructures with diameters from 50 to 100 nm and depth of about 500 nm. We have successfully achieved 11.7 % efficiency of mono-crystalline silicon solar cell and 10.2 % for multi-crystalline silicon solar cell.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1384-1385
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• 2006

Platinum is a candidate of top and bottom electrode in ferroelectric random access memory and dynamic random access memory. High dielectric materials and ferroelectric materials were generally patterned by plasma etching, however, the low etch rate and low etching profile were repoted. We proposed the damascene process of high dielectric materials and ferroelectric materials for patterning process through the chemical mechanical polishing process. At this time, platinum as a top electrode was used for the stopper for the end-point detection as Igarashi model. Therefore, the control of removal rate in platinum chemical mechanical polishing process was required. In this study, an addition of $H_{2}O_{2}$ oxidizer to alumina slurry could control the removal rate of platinum. The removal rate of platinum rapidly increased with an addition of 10wt% $H_{2}O_{2}$ oxidizer from 24.81nm/min to 113.59nm/min. Within-wafer non-uniformity of platinum after chemical mechanical polishing process was 9.93% with an addition of 5wt% $H_{2}O_{2}$ oxidizer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.114-119
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• 2000

Etch characteristics of SF6/CI2 electron cyclotron resonance (ECR) plasmas have been investigated. Surface reaction of gas plasma with polysilicon was also analysed using X-ray photoelectron spectroscopy (XPS). At the same time, the relationship between surface reaction and the etched profile of polysilicon was examined using XPS. The etch rate of polysilicon and oxide increases with increasing flow rate of SF6 in the SF6/CI2 gas mixture, and tis selectivity also increase also increase. It was also found that as increasing flow rate of SF6 in the SF6/CI2 gas mixture, the atomic% of chlorine detected at surface region decrease, but F and S contents increase. At the same time, when the mixing ratio of SF6 gas increases, the anisotropy of etched polysilicon is sharply decreased in the 0%~10% range of the SF6 mixing ratio, but is rarely varied in the range over 10%, in spite of the large variations in flow rates. It can be explained that the bonding of S-Si due to SiSx(x$\leq$2) compound formed on the etched surface suppress the formation of Si-Cl and 'or Si-F bonding in the silicon etching.

• Journal of the Korean Magnetics Society
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• v.14 no.2
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• pp.59-64
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• 2004

We investigated the soft magnetic properties of nanocrystalline Fe-Al-O film as etching the oxide film with ion beam etching method. It is thought that the grain size of Fe-Al-O film increases as the thickness decreases. The coercivity and squareness increase with decreasing thickness. The surface curvature of Am images increases when the etching experiment proceeds. This phenomena could be due to the grain growth which occurs during sputtering. This grain growth could be assisted by the the plasma energy during sputtering. Therefore proper thickness should be searched to acquire the good soft magnetic properties for the nanocrystalline film material. Good soft magnetic properties of Fe-Al-O film was acquired at the thickness of more than 900 nm.