Transactions on Electrical and Electronic Materials

  • 제4권5호
  • /
  • Pages.10-14
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  • 2003
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Black Silicon Layer Formation using Radio-Frequency Multi-Hollow Cathode Plasma System and Its Application in Solar Cell

  • U. Gangopadhyay (School of Electrical and Computer Engineering, Sung Kyun Kwan University) ;
  • Kim, Kyung-Hae (School of Electrical and Computer Engineering, Sung Kyun Kwan University) ;
  • S.K. Dhungel (School of Electrical and Computer Engineering, Sung Kyun Kwan University) ;
  • D. Mangalaraj (School of Electrical and Computer Engineering, Sung Kyun Kwan University) ;
  • Park, J.H. (School of Electrical and Computer Engineering, Sung Kyun Kwan University) ;
  • J. Yi (School of Electrical and Computer Engineering, Sung Kyun Kwan University)
  • 발행 : 2003.10.01
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초록

A low-cost, large area, random, maskless texturing scheme independent of crystal orientation is expected to have significant impact on terrestrial photovoltaic technology. We investigated silicon surface microstructures formed by reactive ion etching (R IE) in Multi-Hollow cathode system. Desirable texturing effect has been achieved when radio-frequency (rf) power of about 20 Watt per one hollow cathode glow is applied for our RF Multi -Hollow cathode system. The black silicon etched surface shows almost zero reflectance in the visible region as well as in near IR region. The etched silicon surface is covered by columnar microstructures with diameters from 50 to 100 nm and depth of about 500 nm. We have successfully achieved 11.7 % efficiency of mono-crystalline silicon solar cell and 10.2 % for multi-crystalline silicon solar cell.

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참고문헌

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