• Current Photovoltaic Research
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• 제8권4호
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• pp.114-119
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• 2020

In this study, Mitigation of Potential-induced degradation (PID) for PERC solar cells using SiO2 Structure of ARC layer. The conventional PID test was conducted with a cell-level test based on the IEC-62804 test standard, but a copper PID test device was manufactured to increase the PID detection rate. The accelerated aging test was conducted by maintaining 96 hours with a potential difference of 1000 V at a temperature of 60℃. As a result, the PERC solar cell of SiO2-Free ARC structure decreased 22.11% compared to the initial efficiency, and the PERC solar cell of the Upper-SiO2 ARC structure decreased 30.78% of the initial efficiency and the PID reliability was not good. However, the PERC solar cell with the lower-SiO2 ARC structure reduced only 2.44%, effectively mitigating the degradation of PID. Na+ ions in the cover glass generate PID on the surface of the PERC solar cell. In order to prevent PID, the structure of SiNx and SiO2 thin films of the ARC layer is important. SiO2 thin film must be deposited on bottom of ARC layer and the surface of the PERC solar cell N-type emitter to prevent surface recombination and stacking fault defects of the PERC solar cell and mitigated PID degradation.

• Current Photovoltaic Research
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• 제6권4호
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• pp.94-101
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• 2018

Light elevated temperature induced degradation (LeTID) was noted as an issue in multi-crystalline silicon solar cells (MSSC) by Ram speck in 2012. In contrast to light induced degradation (LID), which has been researched in silicon solar cells for a long time, research about both LeTID and the mechanism of LeTID has been limited. In addition, research about LeTID in single-crystalline silicon solar cells (SSSC) is even more limited. In order to improve understanding of LeTID in SSSC with a passivated emitter rear contact (PERC) structure, we fabricated four group samples with boron and oxygen factors and evaluated the solar cell characteristics, such as the cell efficiency, $V_{oc}$, $I_{sc}$, fill factor (FF), LID, and LeTID. The trends of LID of the four group samples were similar to the trend of LeTID as a function of boron and oxygen.

• 한국전기전자재료학회논문지
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• 제33권4호
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• pp.291-296
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• 2020

The high power of a shingled photovoltaic module can be attributed to its low cell-to-module loss. The production of high power modules in limited area requires high efficiency solar cells. Shingled photovoltaic modules can be made by divided solar cells, which can be produced by the laser scribing process. After dividing the 21% PERC cell using laser scribing, the efficiency decreased by approximately 0.35%. However, there was no change in the efficiency of the solar cell having relatively lower efficiency, because the laser scribing process induce higher heat damages in solar cells with high efficiency. To prove this phenomena, the J₀ (leakage current density) of each cell was analyzed. It was found that the J₀ of 21% PERC increased about 17 times between full and divided solar cell. However, the J₀ of 20.2% PERC increased only about 2.5 times between full and divided solar cell.

• 태양에너지
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• 제17권1호
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• pp.17-26
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• 1997

단결정 실리콘 태양전지는 PESC(Passivated Emitter Solar Cell), PERC(Passivated Emitter and Rear Cell), Point Contact Cell, PERL(Passivated Emitter and Rear Locally-Diffused Cell) 형태로 기술적인 발전을 해왔다. BCSC(Buried Contact Solar Cell)는 낮은 제조 단가로 높은 효율을 얻을 목적으로 개발되었으며 개량된 형태인 DSBC(Double Sided Buried Contact Cell)는 양면으로 빛을 흡수할 수 있는 장점이 있다.

• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1352-1355
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• 2004

We have applied front contact metallization of plated nickel and copper for high efficiency passivated emitter rear contact(PERC) solar cell. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. The plating technique is a preferred method for commercial solar cell fabrication because it is a room temperature process with high growth rates and good morphology. In this system, the electroless plated Ni is utilized as the contact to silicon and the plated Cu serves as the primary conductor layer instead of traditional solution that are based on Ti/Pd/Ag contact system. Experimental results are shown for over 20 % PERC cells with the Plated Ni/Cu contact system for good performance at low cost.

• Current Photovoltaic Research
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• 제9권4호
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• pp.123-127
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• 2021

This study was on electrode design for the realization of a solar cell that combines electrode formation and module integration process to overcome printing limitations. We used the passivated emitter rear contact (PERC) solar cell. Wafer size was 156.75 mm ×156.75 mm. The fabricated cell results showed that the open-circuit voltage of 649 mV, short-circuit current density of 36.15 mA/cm², fill factor of 68.5%, and efficiency of 16.06% with electrode conditions the 24BBs with the width 190 ㎛ and 90FBs with the width 45 ㎛. For improving efficiency, the characteristics of the solar cell were checked according to the change in the number of BBs and FBs and the change in line fine width. It is confirmed that the efficiency of the solar cell will be improved by increasing the number of FBs from 90 to 120, and increasing the line width of the FBs by about 10 ㎛ compared to the manufacturing solar cells.

• 마이크로전자및패키징학회지
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• 제27권4호
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• pp.55-60
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• 2020

태양광 발전소에 설치된PERC 태양광 모듈 스트링-어레이는 고전압의 전위차로 인해 여전히 potential-induced degradation(PID) 열화 현상이 여전히 보고되고 있다. 이는 태양전지 모듈 커버글라스의 Na+ 이온이 태양전지 봉지재(EVA)를 투과하여 셀 표면으로 전이되고 결함이 많이 분포되어 있는 ARC(SiOx/SiNx) 계면에 양전하가 축적됨으로써 shunt-Resistance(Rsh)가 감소되고 누설전류량이 증가되어 태양전지 출력이 저하되는 현상이다. 본 연구에서는 이를 방지하기 위해 나노임프린트 리소그래피(nano-imprint lithography, NIL) 방식을 이용하여 모스아이(Moth-eye) 나노 구조를 광학 필름 후면에 증착 하였고, 이를 커버글라스와 EVA 사이에 삽입하여 태양광 미니 모듈을 구성하였다. PID 열화 현상을 확인하기 위해 IEC 62804-1 규격에 기반한 셀 단위 PID 열화가속시험을 진행하였고, Light I-V, Dark I-V 분석을 통해 출력(Pmax), 효율(Efficiency), 병렬 저항(shunt resistance)을 확인하였다. 그 결과 기존의 태양전지는 초기 효율 19.76%에서 6.3% 감소하였으나 모스아이 나노 구조 광학 필름(Moth-eye film)이 적용된 태양전지는 0.6% 만 감소하여 PID 열화 현상이 방지되는 것을 확인하였고, 모스아이 나노구조를 통해 투과도가 4% 향상되어 미니 모듈 출력이 2.5% 향상되었다.

• 마이크로전자및패키징학회지
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• 제26권3호
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• pp.75-80
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• 2019

친환경 및 고효율의 장점 때문에 신재생 에너지원으로 널리 사용되고 있는 실리콘 태양 전지는 모듈을 직렬 연결하여 발전할 때 500-1,500 V의 전압이 걸리게 된다. 모듈 프레임과 태양 전지 사이에 걸린 이러한 고전압 차에 의해 장시간 가동시 효율 및 최대 출력이 감소하는 현상인 potential-induced degradation(PID)은 실리콘 태양 전지의 수명을 단축시키는 주요 원인 중 하나로 알려져 있다. 특별히 전면 유리의 $Na^+$ 이온이 고전압에 의해 반사방지막을 거쳐 실리콘 내부로 확산하여 실리콘 내부 적층 결함 등에 축적되는 것이 PID의 원인으로 보고되고 있다. 본 연구에서는 p-형 PERC(passivated emitter and rear contact) 구조 실리콘 태양전지를 대상으로 $Na^+$ 이온의 확산 장벽으로 작용할 수 있는 $SiO_x$층이 p-n 접합과 반사방지막 사이에 삽입되었을 때 그 두께가 PID 현상 완화에 미치는 영향을 연구하였다. 96 시간 동안 1,000 V의 전압을 연속적으로 가한 후 병렬 저항, 효율 및 최대 출력을 측정한 결과 삽입된 $SiO_x$ 장벽층의 두께가 7-8 nm 이상일 때 비로소 PID 현상이 효과적으로 완화되는 것으로 나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.687-687
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• 2013

In rearpoint contact solar cell and the PERC (passivated emitter rear contact) type cell, surfaces were passivated by SiO2 or Al2O3 to increase solar cell efficiency. Therefore, we have investigated the effect of surface passivation for crystalline silicon solarcell using mass-production atomic layer deposited (ALD) Al2O3. The patttern which consists of cylinders with 100um diameter and 5um height was formed by PR patterning on Si (100) substrate and then Al2O3 of about 10nm and 20nm thickness was deposited by ALD. The pattern in 10 nm Al2O3 film was removed by dipping in aceton solution for about 10 min but the pattern in 20 nm Al2O3 film was not. The influences of process temperature and heat treatment were investigated using microwave photoconductance decay (PCD) and Quasi-Steady-State photoconductance (QSSPC). The solar cell process used in this work combines the advantage of using the applicability of a selective deposition associated with a ALD passivation and the use of low-cost screen print for the contacts formation.

• 한국전기전자재료학회논문지
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• 제36권1호
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• pp.16-22
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• 2023

In a solar cell, degradation refers to the decrease in performance parameters caused by defects originated due to various causes. During the fabrication process of solar cells, degradation is generally related to the processes such as passivation or firing. There exist sources of many types of degradation; however, the exact cause of Light and elevated Temperature Induced Degradation (LeTID) is yet to be determined. It is reported that the degradation and the regeneration occur due to the recombination of hydrogen and an arbitrary substance. In this paper, we report the deposition of Al₂O₃ and SiN_X on silicon wafers used in the Passivated Emitter and Rear Contact (PERC) solar structure and its degradation pattern. A higher degradation rate was observed in the sample with single layer of Al₂O₃ only, which indicates that the degradation is affected by the presence or the absence of a passivation thin film. In order to alleviate the degradation, optimization of different steps should be carried out in consideration of degradation in the solar cell fabrication process.