• Title/Summary/Keyword: PERC

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Mitigation of Potential-Induced Degradation (PID) for PERC Solar Cells Using SiO2 Structure of ARC Layer (반사방지막(ARC)의 SiO2 구조에 따른 PERC 태양전지 PID 열화 완화 상관관계 연구)

  • Oh, Kyoung Suk;Park, Ji Won;Chan, Sung Il
    • Current Photovoltaic Research
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    • v.8 no.4
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    • pp.114-119
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    • 2020
  • In this study, Mitigation of Potential-induced degradation (PID) for PERC solar cells using SiO2 Structure of ARC layer. The conventional PID test was conducted with a cell-level test based on the IEC-62804 test standard, but a copper PID test device was manufactured to increase the PID detection rate. The accelerated aging test was conducted by maintaining 96 hours with a potential difference of 1000 V at a temperature of 60℃. As a result, the PERC solar cell of SiO2-Free ARC structure decreased 22.11% compared to the initial efficiency, and the PERC solar cell of the Upper-SiO2 ARC structure decreased 30.78% of the initial efficiency and the PID reliability was not good. However, the PERC solar cell with the lower-SiO2 ARC structure reduced only 2.44%, effectively mitigating the degradation of PID. Na+ ions in the cover glass generate PID on the surface of the PERC solar cell. In order to prevent PID, the structure of SiNx and SiO2 thin films of the ARC layer is important. SiO2 thin film must be deposited on bottom of ARC layer and the surface of the PERC solar cell N-type emitter to prevent surface recombination and stacking fault defects of the PERC solar cell and mitigated PID degradation.

Comparison of light-induced degradation and regeneration in P-type monocrystalline full aluminum back surface field and passivated emitter rear cells

  • Cho, Eunhwan;Rohatgi, Ajeet;Ok, Young-Woo
    • Current Applied Physics
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    • v.18 no.12
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    • pp.1600-1604
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    • 2018
  • This paper reports on a systematic and quantitative assessment of light induced degradation (LID) and regeneration in full Al-BSF and passivated emitter rear contact cells (PERC) along with the fundamental understanding of the difference between the two. After LID, PERC cells showed a much greater loss in cell efficiency than full Al-BSF cells (~0.9% vs ~0.6%) because the degradation in bulk lifetime also erodes the benefit of superior BSRV in PERC cells. Three main regeneration conditions involving the combination of heat and light ($75^{\circ}C/1\;Sun/48h$, $130^{\circ}C/2\;Suns/1.5h$ and $200^{\circ}C/3\;Suns/30s$) were implemented to eliminate LID loss due to BO defects. Low temperature/long time ($75^{\circ}C/48h$) and high temperature/short time ($200^{\circ}C/30s$) regeneration process was unable to reach 100% stabilization. The intermediate temperature/time ($130^{\circ}C/1.5h$) generation achieved nearly full recovery and stabilization (over 99%) for both full Al-BSF and PERC cells. We discussed the effect of temperature, time and suns in regeneration mechanism for two cells.

Improved Understanding of LeTID of Single-crystalline Silicon Solar Cell with PERC

  • Kim, Kwanghun;Baik, Sungsun;Park, Jaechang;Nam, Wooseok;Jung, Jae Hak
    • Current Photovoltaic Research
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    • v.6 no.4
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    • pp.94-101
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    • 2018
  • Light elevated temperature induced degradation (LeTID) was noted as an issue in multi-crystalline silicon solar cells (MSSC) by Ram speck in 2012. In contrast to light induced degradation (LID), which has been researched in silicon solar cells for a long time, research about both LeTID and the mechanism of LeTID has been limited. In addition, research about LeTID in single-crystalline silicon solar cells (SSSC) is even more limited. In order to improve understanding of LeTID in SSSC with a passivated emitter rear contact (PERC) structure, we fabricated four group samples with boron and oxygen factors and evaluated the solar cell characteristics, such as the cell efficiency, $V_{oc}$, $I_{sc}$, fill factor (FF), LID, and LeTID. The trends of LID of the four group samples were similar to the trend of LeTID as a function of boron and oxygen.

Effect of Laser Scribing in High Efficiency Crystal Photovoltaic Cells to Produce Shingled Photovoltaic Module (슁글드 모듈 제작을 위한 고효율 실리콘 태양전지의 레이저 스크라이빙에 의한 영향)

  • Lee, Seong Eun;Park, Ji Su;Oh, Won Je;Lee, Jae Hyeong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.4
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    • pp.291-296
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    • 2020
  • The high power of a shingled photovoltaic module can be attributed to its low cell-to-module loss. The production of high power modules in limited area requires high efficiency solar cells. Shingled photovoltaic modules can be made by divided solar cells, which can be produced by the laser scribing process. After dividing the 21% PERC cell using laser scribing, the efficiency decreased by approximately 0.35%. However, there was no change in the efficiency of the solar cell having relatively lower efficiency, because the laser scribing process induce higher heat damages in solar cells with high efficiency. To prove this phenomena, the J0 (leakage current density) of each cell was analyzed. It was found that the J0 of 21% PERC increased about 17 times between full and divided solar cell. However, the J0 of 20.2% PERC increased only about 2.5 times between full and divided solar cell.

Thickness Effect of SiOx Layer Inserted between Anti-Reflection Coating and p-n Junction on Potential-Induced Degradation (PID) of PERC Solar Cells (PERC 태양전지에서 반사방지막과 p-n 접합 사이에 삽입된 SiOx 층의 두께가 Potential-Induced Degradation (PID) 저감에 미치는 영향)

  • Jung, Dongwook;Oh, Kyoung-suk;Jang, Eunjin;Chan, Sung-il;Ryu, Sangwoo
    • Journal of the Microelectronics and Packaging Society
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    • v.26 no.3
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    • pp.75-80
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    • 2019
  • Silicon solar cells have been widely used as a most promising renewable energy source due to eco-friendliness and high efficiency. As modules of silicon solar cells are connected in series for a practical electricity generation, a large voltage of 500-1,500 V is applied to the modules inevitably. Potential-induced degradation (PID), a deterioration of the efficiency and maximum power output by the continuously applied high voltage between the module frames and solar cells, has been regarded as the major cause that reduces the lifetime of silicon solar cells. In particular, the migration of the $Na^+$ ions from the front glass into Si through the anti-reflection coating and the accumulation of $Na^+$ ions at stacking faults inside Si have been reported as the reason of PID. In this research, the thickness effect of $SiO_x$ layer that can block the migration of $Na^+$ ions on the reduction of PID is investigated as it is incorporated between anti-reflection coating and p-n junction in p-type PERC solar cells. From the measurement of shunt resistance, efficiency, and maximum power output after the continuous application of 1,000 V for 96 hours, it is revealed that the thickness of $SiO_x$ layer should be larger than 7-8 nm to reduce PID effectively.

A Study of Moth-eye Nano Structure Embedded Optical Film with Mitigated Output Power Loss in PERC Photovoltaic Modules (PERC 태양전지 모듈의 출력저하 방지를 위한 모스아이(Moth-eye) 광학필름 연구)

  • Oh, Kyoung-suk;Park, Jiwon;Choi, Jin-Young;Chan, Sung-il
    • Journal of the Microelectronics and Packaging Society
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    • v.27 no.4
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    • pp.55-60
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    • 2020
  • The PERC photovoltaic (PV) modules installed in PV power plant are still reports potential-induced degradation (PID) degradation due to high voltage potential differences. This is because Na+ ions in the cover glass of PV modules go through the encapsulant (EVA) and transferred to the surface of solar cells. As positive charges are accumulated at the ARC (SiOx/SiNx) interface where many defects are distributed, shunt-resistance (Rsh) is reduced. As a result, the leakage current is increased, and decrease in solar cell's power output. In this study, to prevent of this phenomenon, a Moth-eye nanostructure was deposited on the rear surface of an optical film using Nano-Imprint Lithography method, and a solar mini-module was constructed by inserting it between the cover glass and the EVA. To analyze the PID phenomenon, a cell-level PID acceleration test based on IEC 62804-1 standard was conducted. Also analyzed power output (Pmax), efficiency, and shunt resistance through Light I-V and Dark I-V. As a result, conventional solar cells were decreased by 6.3% from the initial efficiency of 19.76%, but the improved solar cells with the Moth-eye nanostructured optical film only decreased 0.6%, thereby preventing the PID phenomenon. As of Moth-eye nanostructured optical film, the transmittance was improved by 4%, and the solar module output was improved by 2.5%.

Ni/Cu Metallization for High Efficiency Silicon Solar Cells (Ni/Cu 전극을 적용한 고효율 실리콘 태양전지의 제작 및 특성 평가)

  • Lee, Eun-Joo;Lee, Soo-Hong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.12
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    • pp.1352-1355
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    • 2004
  • We have applied front contact metallization of plated nickel and copper for high efficiency passivated emitter rear contact(PERC) solar cell. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. The plating technique is a preferred method for commercial solar cell fabrication because it is a room temperature process with high growth rates and good morphology. In this system, the electroless plated Ni is utilized as the contact to silicon and the plated Cu serves as the primary conductor layer instead of traditional solution that are based on Ti/Pd/Ag contact system. Experimental results are shown for over 20 % PERC cells with the Plated Ni/Cu contact system for good performance at low cost.

Ni/Cu metallization for low cost high efficiency PERC cells (Ni/Cu 전극을 적용한 고효율 실리콘 태양전지의 제작 및 특성 평가)

  • Lee, Eun-Joo;Lee, Soo-Hong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.1019-1022
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    • 2004
  • 본 연구에서는 PERC(passivated emitter and rear cell) 구조를 갖는 고효율 단결정 실리콘 태양전지에 도금법을 적용하여 Ni/Cu 전극을 형성하였다. 고효율 태양전지는 제작 비용이 높고 공정이 복잡하기 때문에 실용화에 적용이 어려운 단점이 있다. 따라서 태양전지의 효율은 그대로 유지하고, 공정을 간단하게 줄이면서 저가격화 할 수 있는 방법에 대한 연구가 필요하다. 기존의 고효율 실리콘 태양전지에 가장 일반적으로 적용되고 있는 Ti/Pd/Ag 전극의 경우 고가의 증착 장비를 이용할 뿐만 아니라 재료 자체도 매우 고가의 물질이 사용되고 있다. 도금법으로 Ni/cu 전극을 형성하여 태양전지를 제작한 결과 공정을 간소화하고 비용을 절감 하면서, 20% 이상의 고효율 태양전지를 얻을 수 있었다.

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Comparing the Passivation Quality of Ozone and H2O Oxidant of Atomic Layer Deposited Al2O3 by Post-annealing in N2 and Forming Gas Ambients for Passivated Emitter and Rear Cell (PERC)

  • Cho, Young Joon;Chang, Hyo Sik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.462-462
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    • 2014
  • The effect of rear passivation for passivated emitter and rear cell (PERC) using ozone and H2O oxidant of atomic layer deposited (ALD) Al2O3 was studied by post-annealing in N2 and forming gas ambients. Rear surface of PERC solar cell was passivated by Al2O3 grown by ALD with ozone and H2O oxidant. Al2O3 grown by ALD with ozone oxidant has been known to have many advantages, such as lower interface defects, low leakage current density. Its passivation quality is better than Al2O3 with H2O. Al2O3 layer with 10 nm and 20 nm thickness was grown at $150^{\circ}C$ with ozone oxidant and at $250^{\circ}C$ with H2O oxidant. And then each samples were post-annealled at $450^{\circ}C$ in N2 ambients and at $850^{\circ}C$ in forming gas ambients. The passivation quality was investigated by measuring the minority carrier lifetime respectively. We examined atomic layer deposited Al2O3 such as growth rate, film density, thickness, negative fixed charge density at AlOx/Si interface, and reflectance. The influences of process temperature and heat treatment were investigated using Sinton (WCT-120) by Quasi-Steady State Photoconductance (QSSPC) mode. Ozone-based ALD Al2O3 film shows the best carrier lifetime at lower deposition temperature than H2O-based ALD.

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High Efficiency Crystalline Silicon Solar Cells (고효율 단결정 실리콘 태양전지)

  • Kim, D.S.;Cho, E.C.;Cho, Y.H.;Ebong, A.U.;Min, Y.S.;Lee, S.H.
    • Solar Energy
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    • v.17 no.1
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    • pp.17-26
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    • 1997
  • Since PESC(passivated emitter solar cell) was developed in 1985, high efficiency silicon solar cell technology based on planar technology has been improved in the order of PERC, Point Contact Solar Cell, PERL. BCSC and DSBC, which do not require photolithography, are expected to replace commercial screen printed cells because of its potential for low cost and high efficiency. In this paper, history and characteristics of each type of cells are reviewed.

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