• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.154-154
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• 2010

표면 passivation 효과향상 기술은 고효율의 결정질 실리콘 태양 전지를 제작하는데 필수적 요소이다. passivation을 통해서 전자와 전공의 재결합 속도를 낮출 수 있어 $V_{oc}$가 상승하고, 전류 값 증가를 통하여 효율 향상의 결과를 얻을 수 있기 때문이다. passivation을 위해서 다양한 각도로 접근하였다. 첫째는 $SiN_x$를 이용한 passivation효과 실험 둘째는 plasma 분위기에서 $N_2O$를 이용한 passivation효과 실험 그리고 마지막으로 RTO를 이용한 passivation 효과를 실험하였다. 첫 번째 실험은 PECVD를 이용하여 $SiN_x$를 증착한 후 굴절률 1.9 2.66으로 가변 한 결과 $SiN_x$ n=2.66에서 $D_{it}=8.82{\times}10^9$ [$cm^{-2}eV^{-1}$]로 우수한 passivation 효과를 얻을 수 있었다. 두 번째 실험에서는 PECVD를 이용해서 $N_2O$ treatment 후 SiON 증착한 샘플을 이용하여 시간 가변에 따른 passivation 효과를 확인하였다. 그 결과 $N_2O$ 50sccm, 100mTorr, 20W, $400^{\circ}C$ 8min 조건에서 가장 우수한 passivation 효과를 관찰할 수 있었다. 마지막 실험은 RTP를 이용하여 $SiO_2$ 박막에 대한 온도, 시간에 따른 passivation효과를 확인하였다. 그 결과 $O_2$ 3L/min $800^{\circ}C$ 2~3nm 3min 공정에서 lifetime이 220us(n형)의 결과를 얻을 수 있었다. 상기 세 실험결과를 태양전지제작에 응용한다면 고효율의 태양전지 제작이 가능할 것으로 사료된다.

• Transactions on Electrical and Electronic Materials
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• 제13권2호
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• pp.69-72
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• 2012

In this study, deposition of low-dielectric constant SiOC(H) films by conventional plasma-enhanced chemical vapor deposition (PECVD) were investigated through various characterization techniques. The results show that, with an increase in the plasma power density, the relative dielectric constant (k) of the deposited films decreases whereas the refractive index increases. This is mainly due to the incorporation of organic molecules with $CH_3$ group into the Si-O-Si cage structure. It is as confirmed by FT-IR measurements in which the absorption peak at 1,129 $cm^{-1}$ corresponding to Si-O-Si cage structure increases with power plasma density. Electrical characterization reveals that even after fast thermal annealing process, the leakage current density of the deposited films is in the order of $10^{-11}$ A/cm at 1.5 MV/cm. The reliability of the SiOC(H) film is also further characterized by using BTS test.

• Transactions on Electrical and Electronic Materials
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• 제8권3호
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• pp.115-120
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• 2007

Reliability between passivated and unpassivated process with the base-exposed InGaP/GaAs HBTs was studied. A passivation of HBT was attempted by $SiO_2$ thin film deposition at $300^{\circ}C$ by means of PECVD. Base-exposed InGaP/GaAs HBTs before and after passivation were investigated and compared in terms of DC and RF performance. Over a total period of 30 days, passivated HBTs show only 2% degradation of DC current gain for the high current density of $40KA/cm^2$. The measured thermal resistance of $2{\times}30{\mu}m^2$ single emitter InGaP/GaAs HBT passivated with PECVD $SiO_2$ devices can be extracted and was founded to be 1430 K/W. The estimated MTTF was $2{\times}10^7hr\;at\;T_j=125^{\circ}C$ with an activation energy $(E_a)$ of 1.37 eV.

• 한국세라믹학회지
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• 제31권2호
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• pp.206-212
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• 1994

Effects of the film deposition process parameters on the properties such as deposition rate, etch rate, refractive index, stress and step coverage of plasma enhanced chemical vapor deposited (PECVD) tetraethylorthosilicate glass (TEOS) SiO2 film were investigated and analysed using SEM, FTIR and SIMS techniques. Increasing TEOS flow or decreasing O2 flow increased the deposition rate and the compressive stress of the oxide film but produced a less denser film. The deposition rate decreased owing to the decrease in the sticking coefficient of the TEOS and the O2 molecules onto the substrate Si with increasing the substrate temperature. Increasing the substrate temperature produced a denser film with a lower etch rate and the higher refractive index by lowering SiOH and moisture contents. Increasing the rf power increases the ion bombardment energy. This increase in energy, in turn, increases the deposition rate and tends to make the film denser. No appreciable changes were found in the deposition rate but the refractive index and the stress of the film decreased with increasing the deposition pressure. The carbon content in the plasma TEOS CVD oxide film prepared under our standard deposition conditions were very low according to the SIMS analysis results.

• 한국결정성장학회지
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• 제13권1호
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• pp.36-40
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• 2003

$CH_4/(C_2H_5O)_4Si/H_2$/Ar가스 혼합물을 출발 반응원료로 하여 플라즈마 화학기상증착법으로 Si 기판 위에 유사 다이아몬드 나노복합체(diamond-like nanocomposite, DLN) 박막을 증착하였다. 성장된 막의 화학구조와 미세구조를 확인하였으며 막의 마모특성을 평가하였다. 증착된 DLN 막은 다이아몬드와 유사한 a-C:H 구조와 실리카와 유사한 a-Si:O 구조가 네트워크 형태로 구성되어 있음을 확인하였으며 극도로 낮은 마모계수와 마모속도를 나타내어 내마모 코팅용 보호막으로 의 응용에 적합한 것으로 나타났다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 추계학술발표강연 및 논문개요집
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• pp.36-36
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• 1998

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.42-45
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• 1992

The poly silicon thin films were prepared by solid phase crystallization at 600$^{\circ}C$ of amorphous silicon films deposited on Corning 7059 glass and (100) silicon wafer with thermally grown SiO$_2$substrate by plasma enhanced chemical vapor deposition with varying rf power, deposition temperature, total flow rate. Crystallization time, microstructure, absorption coefficients were investigated by RAMAN, XRD analysis and UV transmittance measurement. Crystallization time of amorphous silicon films was increased with increasing rf power, decreasing deposition temperature and decreasing total flow rate.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2003년도 추계종합학술대회
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• pp.537-541
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• 2003

강유전체(SrTiO$_3$) 박막을 게이트 절연층으로 하여 수소화 된 비정질 실리콘 박막 트랜지스터를 유리 기판위에 제조하였다. 강유전체는 기존의 SiO$_2$, SiN 등과 같은 게이트 절연체에 비하여 유전특성이 매우 뛰어나 TFT의 ON 전류를 증가시키고 문턱전압을 낮추며 항복특성을 개선하여 준다. PECVD 에 의하여 증착된 a-Si:H 는 FTIR 측정 결과 2,000 $cm^{-}$1 과 635 $cm^{-}$l 및 876 cm-1 에서 흡수 밴드가 나타났으며, 2,000 $cm^{-1}$ / 과 635 $cm^{-1}$ / 은 SiH$_1$ 의 stretching 과 rocking 모드에 기인 한 것이며 876 $cm^{-1}$ / 의 weak 밴드는 SiH$_2$ vibration 모드에 의한 것이다. a-SiN:H 는 optical bandgap 이 2.61 eV 이고 굴절률은 1.8 - 2.0, 저항률은 $10^{11}$ - $10^{15}$ $\Omega$-cm 정도로 실험 조건에 따라 약간 다르게 나타난다. 강유전체(SrTiO$_3$) 박막의 유전상수는 60 - 100 정도이고 항복전계는 1MV/cm 이상으로 우수한 절연특성을 갖고 있다. 강유전체를 이용한 TFT 의 채널 길이는 8 - 20 $\mu$m, 채널 넓이는 80 - 200 $\mu$m 로서 드레인 전류가 게이트 전압 20V에서 3 $\mu$A 이고 Ion/Ioff 비는 $10^{5}$ - $10^{6}$, Vth 는 4 - 5 volts 이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.207-207
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• 2009

In this work, we report the physical properties of amorphous $Al_2O_3$ thin films by plasma-enhanced chemical vapour deposition (PECVD) using trimethyl-aluminium (TMA) as the Al precursor at low temperatures. The thin films were deposited on Si substrates. The composition and the bonding structure of the amorphous $Al_2O_3$ films were studied using Fourier transform infrared spectroscopy (FT-IR), Ellipsometer and UV-visible Spectrophotometer and MOCON.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권2호
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• pp.95-102
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• 2001

Hafnium oxide thin films for gate dielectric were deposited at $300^{\circ}C$ on p-type Si (100) substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed in $O_2$ and $N_2$ ambient at various temperatures. The effect of hydrogen treatment in 4% $H_2$ at $350^{\circ}C$ for 30 min on the electrical properties of $HfO_2$for gate dielectric was investigated. The flat-band voltage shifts of $HfO_2$capacitors annealed in $O_2$ambient are larger than those in $N_2$ambient because samples annealed in high oxygen partial pressure produces the effective negative charges in films. The oxygen loss in $HfO_2$films was expected in forming gas annealed samples and decreased the excessive oxygen contents in films as-deposited and annealed in $O_2$ or $N_2$ambient. The CET of films after hydrogen forming gas anneal almost did not vary compared with that before hydrogen gas anneal. Hysteresis of $HfO_2$films abruptly decreased by hydrogen forming gas anneal because hysteresis in C-V characteristics depends on the bulk effect rather than $HfO_2$/Si interface. The lower trap densities of films annealed in $O_2$ambient than those in $N_2$were due to the composition of interfacial layer becoming closer to $SiO_2$with increasing oxygen partial pressure. Hydrogen forming gas anneal at $350^{\circ}C$ for samples annealed at various temperatures in $O_2$and $N_2$ambient plays critical role in decreasing interface trap densities at the Si/$SiO_2$ interface. However, effect of forming gas anneal was almost disappeared for samples annealed at high temperature (about $800^{\circ}C$) in $O_2$ or $N_2$ambient.